Power Transistor (NPN) TIP35C Power Transistor (NPN) Features • Designed for use in general purpose power amplifier and switching applications Mechanical Data Case: TO-3P TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP35C Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5.0 V Collector Current Continuous 25 A Collector Current Peak 40 A IB Base Current 5.0 A PD Power Dissipation @ TC=25°C Derate above 25°C 125 1.0 W W/° C -65 to +150 °C IC ICM TJ, TSTG Operating Junction and Storage Temperature Range Thermal Characteristics (T Ambient=25ºC unless noted otherwise) Symbol RθJC Description Thermal Resistance from Junction to Case TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Max. Unit 1.0 ° C /W Rev. B/NX Page 1 of 5 Power Transistor (NPN) TIP35C Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol VCEO(sus) Description Collector-Emitter Sustaining Voltage (Note) Min. Max. Unit Conditions 100 - V IC=30mA, IB=0 ICEO Collector Cut-off Current - 1.0 mA VCE=60V, IB=0 ICES Collector Cut-off Current - 0.7 mA VCE=100V, VEB=0 IEBO Emitter Cut-off Current - 1.0 mA VEB=5V, IC=0 Min. Max. Unit 25 - VCE=4V, IC=1.5A 15 75 VCE=4V, IC=15A - 1.8 V IC=15A, IB=1.5A - 4.0 V IC=25A, IB=5A - 2.0 V IC=15A, VCE=4V - 4.0 V IC=25A, VCE=4V Min. Max. Unit MHz ON Characteristics (Note) Symbol hFE Description Conditions DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage Dynamic Characteristics Symbol Description fT Current Gain-Bandwidth Product 3.0 - hfe Small Signal Current Gain 25 - Conditions VCE=10V, IC=1A, fTEST=1MHz, fT=lhfel· fTEST VCE=10V, IC=1A, f=1KHz Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. Rev. B/NX www.taitroncomponents.com Page 2 of 5 Power Transistor (NPN) TIP35C Typical Characteristics Curves Fig.2- DC Current Gain PD, Power Dissipation (W) hFE, DC Current Gain Fig.1- Power Derating TC, Temperature (° C) IC, Collector Current (A) Fig.4 Turn-on Time- t, Time (us) t, Time (us) Fig.3 Turn-off Time- IC, Collector Current (A) IC, Collector Current (A) Rev. B/NX www.taitroncomponents.com Page 3 of 5 Power Transistor (NPN) TIP35C Fig.5 Reverse Base Safe Operating Area - Ic, Collector Current (A) Ic, Collector Current (A) Fig.6 Active Region Safe Operating Area - VCE, Collector-Emitter Voltage (V) VCE, Collector-Emitter Voltage (V) Dimensions in mm TO-3P Rev. B/NX www.taitroncomponents.com Page 4 of 5 Power Transistor (NPN) TIP35C How to contact us US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI 6F., No.190, Sec. 2, Zhongxing Rd., Xindian Dist., New Taipei City 23146, Taiwan R.O.C. Tel: 886-2-2913-6238 Fax: 886-2-2913-6239 TAITRON COMPONENT TECHNOLOGY, SHANGHAI CORPORATION METROBANK PLAZA,1160 WEST YAN’AN ROAD, SUITE 1503, SHANGHAI,200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-2302-5027 Rev. B/NX www.taitroncomponents.com Page 5 of 5