800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A N-Channel MOSFET General Description • • • • • Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220 Features • VDSS=800V, ID=4A; • Low Drain-Source ON Resistance: RDS(ON) =3.6 Ω @ VGS=10V • Qg(typ.)=25nC • RoHS Compliant TO-220F Pin Configuration 1: Gate 2: Drain 3: Source 1: Gate 2: Drain 3: Source TO-220 TO-220F TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/JH Page 1 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Absolute Maximum Ratings (TC=25ºC unless otherwise specified, Note) Symbol Description MSK4N80T MSK4N80F Unit VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ± 30 V Drain Current @ Tc=25ºC (note 1) 4.0 IDP Drain Current - Pulsed (note 2) 16 EAS Single Pulsed Avalanche Energy (note 3) 460 mJ EAR Repetitive Avalanche Energy (note 2) 13 mJ dV/dt Peak Diode Recovery dv/dt (note 4) 4.0 V/nS ID PD RθJC RθJA TJ TSTG Power Dissipation A Tc=25ºC 130 43 W Derate above 25ºC 1.04 0.34 W/°C 0.96 2.9 °C/ W Thermal Resistance (Junction-to-Case) Thermal Resistance (Junction-to-Ambient) Junction Temperature Storage Temperature Range 62.5 °C/ W +150 °C -55 to +150 °C Note: 1. Drain current limited by maximum junction temperature. 2. Repetitive rating: Pulse width limited by junction temperature. 3. L=54mH, IS=4A, VDD=50V, RG=25Ω, Starting Tj=25°C. 4. IS≤4A, dI/dt≤200A/µS, VDD≤BVDSS, Starting Tj=25°C. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol V(BR)DSS Description Drain-Source Breakdown Voltage Min. Typ. Max. Unit Conditions 800 - - V VGS=0V, ID=250µA Breakdown Voltage Temperature Coefficient - 0.95 - V/°C ID=250µA, Referenced to 25ºC IDSS Zero Gate Voltage Drain Current - - 10 uA VDS=800V, VGS=0V IGSS Gate-Source Leakage Current - - ±100 nA VGS=±30V, VDS=0V ΔV(BR)DSS/ΔTj Rev. A/JH www.taitroncomponents.com Page 2 of 12 800V/4A N-Channel MOSFET MSK4N80T/F On Characteristics Symbol Description VGS(th) Gate Threshold Voltage RDS(ON) gFS Min. Typ. Max. Unit Conditions 2.0 - 4.0 V VDS=VGS, ID=250μA Drain-Source ON Resistance - 3.0 3.6 Ω VGS=10V, ID=2A Forward Transconductance - 3.8 - S VDS=50V, ID=2 A Min. Typ. Max. Unit Dynamic Characteristics Symbol Description Ciss Input Capacitance - 824 1071 Coss Output Capacitance - 68 88 Crss Reverse Transfer Capacitance - 9 12 Min. Typ. Max. pF Conditions VDS=25V, VGS=0V, f=1MHz Switching Characteristics Symbol Description tD(on) Turn-On Delay Time - 29.5 69 tr Turn-On Rise Time - 59.5 129 tD(off) Turn-Off Delay Time - 98 206 tf Turn-Off Fall Time - 86 182 Qg Total Gate Charge - 25 31 Qgs Gate-Source Charge - 4 - Qgd Gate-Drain Charge - 13 - Unit Conditions ns VDD=400V, RG=25Ω, ID=4A (note 5,6) nC VDS=640V, ID=4A, VGS=10V (note 5,6) Drain-Source Diode Characteristics and Maximum Ratings Symbol Is Isp Vsd Description Continuous Source-Drain Diode Current Pulsed Source-Drain Diode Current Source-Drain Diode Forward Voltage Min. Typ. Max. - - 4.0 - - 16 - - Unit Conditions A VGS< VGS(th) 1.4 V IS=4A, VGS=0V trr Reverse Recovery Time - 575 - ns Qrr Reverse Recovered Charge - 3.65 - uC IS=4A,VGS=0V dIS//dt=100A/us Note: 5. Pulse test: Pulse width ≤300us, Duty cycle≤2%. Rev. A/JH www.taitroncomponents.com Page 3 of 12 800V/4A N-Channel MOSFET MSK4N80T/F 6. Essentially independent of operating temperature. Typical Characteristics Curves Fig.2- ID vs. VGS Drain Current ID (A) Drain Current ID (A) Fig.1- ID vs. VDS Gate-Source Voltage VGS (V) Drain-Source Voltage VDS (V) Fig.4- IS vs. VSD Reverse Drain Current IS (A) Normalized Breakdown Voltage BVDSS Fig.3-BVDSS vs. TJ Junction Temperature TJ (°C) Source-Drain Voltage VSD (V) Rev. A/JH www.taitroncomponents.com Page 4 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Fig.6- RDS(ON) vs. ID Normalized ON Resistance RDS(ON) (Ω) Normalized ON Resistance RDS(ON) Fig.5- RDS(ON) vs. TJ Drain Current ID (A) Junction Temperature TJ (°C) Fig.8- Qg vs. VGS Drain Current ID (A) Gate-Source Voltage VGS (V) Fig.7- ID vs. TJ Junction Temperature TJ (°C) Gate-Charge Qg (nC) Rev. A/JH www.taitroncomponents.com Page 5 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Fig.10- Safe Operation Area (MSK4N80T) Drain Current ID (A) Capacitance (pF) Fig.9- C vs. VDS Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain Current ID (A) Fig.11- Safe Operation Area (MSK4N80F) Drain-Source Voltage VDS (V) Rev. A/JH www.taitroncomponents.com Page 6 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Normalized Transient Thermal Resistance Fig.12- Transient Thermal Response Curve MSK4N80T Square Wave pulse Duration t1 (S) Normalized Transient Thermal Resistance Fig.13- Transient Thermal Response Curve MSK4N80F Square Wave pulse Duration t1 (S) Rev. A/JH www.taitroncomponents.com Page 7 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Test Circuit and Waveform Fig.14-Gate Charge Fig.15- Single Pulsed Avalanche Energy Rev. A/JH www.taitroncomponents.com Page 8 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Fig.16-Resistive Load Switching Fig.17-Source - Drain Diode Reverse Recovery and dv /dt Rev. A/JH www.taitroncomponents.com Page 9 of 12 800V/4A N-Channel MOSFET MSK4N80T/F Dimensions in mm MSK4N80T TO-220 Rev. A/JH www.taitroncomponents.com Page 10 of 12 800V/4A N-Channel MOSFET MSK4N80T/F MSK4N80F TO-220F Rev. A/JH www.taitroncomponents.com Page 11 of 12 800V/4A N-Channel MOSFET MSK4N80T/F How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/JH www.taitroncomponents.com Page 12 of 12