MSK4N80F - Taitron Components, Inc.

800V/4A
N-Channel MOSFET
MSK4N80T/F
800V/4A N-Channel MOSFET
General Description
•
•
•
•
•
Fast switching time
Low on resistance, low gate charge
Excellent avalanche characteristics
Suitable for active power factor correction
Suitable for switching mode power supplies
TO-220
Features
• VDSS=800V, ID=4A;
• Low Drain-Source ON Resistance:
RDS(ON) =3.6 Ω @ VGS=10V
• Qg(typ.)=25nC
• RoHS Compliant
TO-220F
Pin Configuration
1: Gate 2: Drain 3: Source
1: Gate 2: Drain 3: Source
TO-220
TO-220F
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Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
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Rev. A/JH
Page 1 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Absolute Maximum Ratings (TC=25ºC unless otherwise specified, Note)
Symbol
Description
MSK4N80T
MSK4N80F
Unit
VDSS
Drain-Source Voltage
800
V
VGSS
Gate-Source Voltage
± 30
V
Drain Current @ Tc=25ºC (note 1)
4.0
IDP
Drain Current - Pulsed (note 2)
16
EAS
Single Pulsed Avalanche Energy
(note 3)
460
mJ
EAR
Repetitive Avalanche Energy (note 2)
13
mJ
dV/dt
Peak Diode Recovery dv/dt (note 4)
4.0
V/nS
ID
PD
RθJC
RθJA
TJ
TSTG
Power
Dissipation
A
Tc=25ºC
130
43
W
Derate above 25ºC
1.04
0.34
W/°C
0.96
2.9
°C/ W
Thermal Resistance
(Junction-to-Case)
Thermal Resistance
(Junction-to-Ambient)
Junction Temperature
Storage Temperature Range
62.5
°C/ W
+150
°C
-55 to +150
°C
Note: 1. Drain current limited by maximum junction temperature.
2. Repetitive rating: Pulse width limited by junction temperature.
3. L=54mH, IS=4A, VDD=50V, RG=25Ω, Starting Tj=25°C.
4. IS≤4A, dI/dt≤200A/µS, VDD≤BVDSS, Starting Tj=25°C.
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
V(BR)DSS
Description
Drain-Source Breakdown Voltage
Min.
Typ.
Max.
Unit
Conditions
800
-
-
V
VGS=0V, ID=250µA
Breakdown Voltage Temperature
Coefficient
-
0.95
-
V/°C
ID=250µA,
Referenced to 25ºC
IDSS
Zero Gate Voltage Drain Current
-
-
10
uA
VDS=800V, VGS=0V
IGSS
Gate-Source Leakage Current
-
-
±100
nA
VGS=±30V, VDS=0V
ΔV(BR)DSS/ΔTj
Rev. A/JH
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Page 2 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
On Characteristics
Symbol
Description
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Min.
Typ.
Max.
Unit
Conditions
2.0
-
4.0
V
VDS=VGS, ID=250μA
Drain-Source ON Resistance
-
3.0
3.6
Ω
VGS=10V, ID=2A
Forward Transconductance
-
3.8
-
S
VDS=50V, ID=2 A
Min.
Typ.
Max.
Unit
Dynamic Characteristics
Symbol
Description
Ciss
Input Capacitance
-
824
1071
Coss
Output Capacitance
-
68
88
Crss
Reverse Transfer Capacitance
-
9
12
Min.
Typ.
Max.
pF
Conditions
VDS=25V, VGS=0V,
f=1MHz
Switching Characteristics
Symbol
Description
tD(on)
Turn-On Delay Time
-
29.5
69
tr
Turn-On Rise Time
-
59.5
129
tD(off)
Turn-Off Delay Time
-
98
206
tf
Turn-Off Fall Time
-
86
182
Qg
Total Gate Charge
-
25
31
Qgs
Gate-Source Charge
-
4
-
Qgd
Gate-Drain Charge
-
13
-
Unit
Conditions
ns
VDD=400V, RG=25Ω,
ID=4A (note 5,6)
nC
VDS=640V, ID=4A,
VGS=10V (note 5,6)
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Is
Isp
Vsd
Description
Continuous Source-Drain Diode
Current
Pulsed Source-Drain Diode
Current
Source-Drain Diode Forward
Voltage
Min.
Typ.
Max.
-
-
4.0
-
-
16
-
-
Unit
Conditions
A
VGS< VGS(th)
1.4
V
IS=4A, VGS=0V
trr
Reverse Recovery Time
-
575
-
ns
Qrr
Reverse Recovered Charge
-
3.65
-
uC
IS=4A,VGS=0V
dIS//dt=100A/us
Note: 5. Pulse test: Pulse width ≤300us, Duty cycle≤2%.
Rev. A/JH
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Page 3 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
6. Essentially independent of operating temperature.
Typical Characteristics Curves
Fig.2- ID vs. VGS
Drain Current ID (A)
Drain Current ID (A)
Fig.1- ID vs. VDS
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
Fig.4- IS vs. VSD
Reverse Drain Current IS (A)
Normalized Breakdown Voltage
BVDSS
Fig.3-BVDSS vs. TJ
Junction Temperature TJ (°C)
Source-Drain Voltage VSD (V)
Rev. A/JH
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Page 4 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Fig.6- RDS(ON) vs. ID
Normalized ON Resistance
RDS(ON) (Ω)
Normalized ON Resistance
RDS(ON)
Fig.5- RDS(ON) vs. TJ
Drain Current ID (A)
Junction Temperature TJ (°C)
Fig.8- Qg vs. VGS
Drain Current ID (A)
Gate-Source Voltage VGS (V)
Fig.7- ID vs. TJ
Junction Temperature TJ (°C)
Gate-Charge Qg (nC)
Rev. A/JH
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Page 5 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Fig.10- Safe Operation Area (MSK4N80T)
Drain Current ID (A)
Capacitance (pF)
Fig.9- C vs. VDS
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Fig.11- Safe Operation Area (MSK4N80F)
Drain-Source Voltage VDS (V)
Rev. A/JH
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Page 6 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Normalized Transient
Thermal Resistance
Fig.12- Transient Thermal Response Curve
MSK4N80T
Square Wave pulse Duration t1 (S)
Normalized Transient
Thermal Resistance
Fig.13- Transient Thermal Response Curve
MSK4N80F
Square Wave pulse Duration t1 (S)
Rev. A/JH
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Page 7 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Test Circuit and Waveform
Fig.14-Gate Charge
Fig.15- Single Pulsed Avalanche Energy
Rev. A/JH
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Page 8 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Fig.16-Resistive Load Switching
Fig.17-Source - Drain Diode Reverse Recovery and dv /dt
Rev. A/JH
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Page 9 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
Dimensions in mm
MSK4N80T
TO-220
Rev. A/JH
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Page 10 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
MSK4N80F
TO-220F
Rev. A/JH
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Page 11 of 12
800V/4A N-Channel MOSFET
MSK4N80T/F
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Rev. A/JH
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Page 12 of 12