SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N E K High saturation current capablity. G J D ) H SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 ID 500 IDP 2000 Drain Power Dissipation PD 625 Junction Temperature Tj 150 Tstg -55 150 Continuous Drain Current Pulsed (Note 1) Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle EQUIVALENT CIRCUIT L CHARACTERISTIC 1 2 C F F 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M MAXIMUM RATING (Ta=25 DIM A B C D E F G H J K L M N V 1. SOURCE 2. GATE 3. DRAIN mA mW TO-92 1% D G S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A 2009. 11. 17 Revision No : 1 1/4 2N7000K ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 2) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage ID(ON) On State Drain Current TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A 1.1 - 2.35 V VGS=10V, ID=500mA - 1.2 1.8 VGS=5V, ID=50mA - 1.5 2.1 VGS=10V, ID=500mA - 0.6 0.9 VGS=5V, ID=50mA - 0.075 0.105 VGS=10V, VDS= 2 VDS(ON) 500 - - mA 200 580 - mS - 760 1150 mV MIN. TYP. MAX. UNIT - 52.1 - - 3.9 - - 7.7 - V Forward Transconductance gFS VDS=10V, ID=500mA Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1MHz Turn-On Time ton VDD=30V, RL=155 , ID=190mA, - 11.1 - Turn-Off Time toff VGS=10V - 22.5 - Switching Time pF nS SWITCHING TIME TEST CIRCUIT ton td(on) VDD td(off) tr 90% toff tf 90% RL VIN VOUT D OUTPUT VOUT 10% VGS INVERTED G 90% 50% 50% S INPUT VIN 10% PULSE WIDTH 2009. 11. 17 Revision No : 1 2/4 ID - VDS 1.5 COMMON SOURCE DRAIN CURRENT ID (A) Ta = 25 C 5V 10V 1.2 6V 7V 0.9 4V 0.6 0.3 VGS = 3V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 DRAIN SOURCE ON - RESISTANCE RDS ( ) 2N7000K RDS(ON) - ID 6.0 COMMON SOURCE Ta = 25 C 5.0 4.0 VGS = 3V 3.0 2.0 4V 5V 1.0 6V 7V 10V 0.0 0.1 0.2 DRAIN-SOURCE VOLTAGE VDS (V) 0.3 3.0 VGS=5V ID=50mA 1.5 1.0 VGS=10V ID=500mA 0.0 -100 -50 0 50 100 150 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 I S - V SD REVERSE DRAIN CURRENT I S (A) DRAIN CURRENT ID (A) 1.2 ID - VGS -55 C 0.8 25 C 125 C 0.6 0.4 0.2 1 2 3 4 DRAIN-SOURCE VOLTAGE VGS (V) 2009. 11. 17 Common Source VGS=VDS ID=250 µA 1.3 JUNCTION TEMPERATURE Tj ( C) COMMON SOURCE VDS =10V 0 1.4 JUNCTION TEMPERATURE Tj ( C) 1.0 0.0 NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) DRAIN SOURCE ON - RESISTANCE RDS ( ) 3.5 0.5 Revision No : 1 0.6 Vth - Tj 4.0 2.0 0.5 DRAIN-CURRENT ID (A) RDS(ON) - Tj 2.5 0.4 5 150 1 VGS=1V 0.1 VGS=0V 0.01 0.0 0.3 0.6 0.9 1.2 1.5 BODY DIODE FORWARD VOLTAGE VSD (V) 3/4 2N7000K VGS - Q g 1000 COMMON SOURCE VDS=30V ID=0.3A Ta=25 C 8 CAPACITANCE C (pF) GATE-SOURCE VOLTAGE VGS (V) 10 C - V DS 6 4 2 COMMON SOURCE VGS =0V f=1MHz Ta=25 C 100 C iss C oss 10 C rss 1 0 0 2 4 6 8 10 0 GATE CHARGE Q g (nC) 5 10 10 1 PW =1ms PW =10ms PW =100ms DC 0.001 0.0001 0.001 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE V DS (V) 2009. 11. 17 Revision No : 1 100 DRAIN POWER DISSIPATION P D (mW) DRAIN CURRENT I D (A) PW 0.01 25 P D - Ta Tj=150 C , Ta=25 C ,Single Pulse 0.1 20 DRAIN-SOURCE VOLTAGE V DS (V) SOA 10 15 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 4/4