MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES · · · SOT-523 Epitaxial Planar Die Construction A Complementary NPN Type Available (MMBT3904FW) L Ideal for Medium Power Amplification and Switching COLLECTOR G C 1 1 V 3 3 B S Top View 2 BASE H D SOT-523 J K 2 EMITTER Dim Min Max A 1.500 1.700 B 0.750 0.850 C 0.700 0.900 D 0.250 0.350 G 0.900 1.100 H 0.000 0.100 J 0.100 0.200 K 0.220 0.500 L 0.400 0.600 S 1.500 1.700 V 0.200 0.400 All Dimension in mm MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –200 mAdc Symbol Max Unit Total Device Dissipation FR– 4 Board(1) TA = 25°C Derate above 25°C PD 200 mW 1.6 mW/°C Thermal Resistance Junction to Ambient RqJA 600 °C/W PD 300 mW 2.4 mW/°C RqJA 400 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3906FW = 3N, 2A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –40 — –40 — –5.0 — — –50 — –50 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) IBL Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) ICEX 1. FR– 4 = Minimum Pad 2. Alumina = 1.0 1.0 inchs. 99.5% alumina. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Vdc Vdc Vdc nAdc nAdc REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual Page 1 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 60 80 100 60 30 — — 300 — — — — –0.25 –0.4 –0.65 — –0.85 –0.95 250 — — 4.5 — 10 2.0 12 0.1 10 100 400 3.0 60 — 4.0 Unit ON CHARACTERISTICS(3) DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) HFE Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF MHz pF pF kΩ X 10– 4 — mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –3.0 Vdc, VBE = 0.5 Vdc, IC = –10 mAdc, IB1 = –1.0 mAdc) td — 35 tr — 35 (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) ts — 225 tf — 75 v 300 ms, Duty Cycle v 2.0%. ns ns 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 CS < 4 pF* 10.6 V 1N916 10 < t1 < 500 ms 300 ns Duty Cycle = 2% Duty Cycle = 2% t1 CS < 4 pF* 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Figure 2. Storage and Fall Time Equivalent Test Circuit Any changing of specification will not be informed individual Page 2 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, Charge (pC) Capacitance (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Bias (V) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 15 V 30 20 t f , Fall Time (ns) Time (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 5.0 7.0 10 20 30 50 70 100 200 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 I C, Collector Current (mA) I C, Collector Current (mA) Figure 5. Turn – On Time Figure 6. Fall Time 50 70 100 200 Any changing of specification will not be informed individual Page 3 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE = 200 IC = 1.0 mA 12 W f = 1.0 kHz NF, Noise Figure (dB) 4.0 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 A m 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 m 0 0.1 0.2 0.4 1.0 IC = 1.0 mA 10 NF, Noise Figure (dB) 5.0 8 6 m IC = 100 mA 4 IC = 50 A 2 2.0 4.0 10 f, Frequency (kHz) 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 R g, Source Resistance (k OHMS) Figure 7. 40 100 Figure 8. h PARAMETERS (VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 m h oe, Output Admittance ( mhos) 300 h fe , DC Current Gain 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain 3.0 5.0 7.0 10 h re , Voltage Feedback Ratio (X 10 –4 ) 10 10 h ie , Input Impedance (k OHMS) 0.5 0.7 1.0 2.0 I C, Collector Current (mA) Figure 10. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) Figure 11. Input Impedance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 12. Voltage Feedback Ratio Any changing of specification will not be informed individual Page 4 of 5 MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL STATIC CHARACTERISTICS 2.0 h FE, DC Current Gain (Normalized) TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 I C, Collector Current (mA) 10 20 30 70 50 100 200 Figure 13. DC Current Gain 1.0 VCE , Collector Emitter Voltage (V) TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.3 0.5 I B, Base Current (mA) 0.1 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region 1.0 1.0 VBE(sat) @ IC/IB = 10 V, Voltage (V) 0.8 q V, Temperature Coefficients (mV/ °C) TJ = 25°C VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 50 10 20 I C, Collector Current (mA) Figure 15. “ON” Voltages http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 100 200 0.5 qVC FOR VCE(sat) 0 +25°C TO +125°C – 55°C TO +25°C – 0.5 +25°C TO +125°C – 1.0 – 55°C TO +25°C qVB FOR VBE(sat) – 1.5 – 2.0 0 20 40 60 80 100 120 140 I C, Collector Current (mA) 160 180 200 Figure 16. Temperature Coefficients Any changing of specification will not be informed individual Page 5 of 5