SMD General Purpose Transistor (PNP) MMBT4403 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT4403 Unit Marking Code 2T VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5 V -600 mA MMBT4403 Unit Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C 225 mW Derate above 25°C 1.8 mW/° C RθJA Thermal Resistance from Junction to Ambient 556 ° C/W Ptot Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, 300 mW Derate above 25°C 2.4 mW/° C Thermal Resistance from Junction to Ambient 417 ° C/W -55 to +150 °C IC Collector Current-Continuous Thermal Characteristics Symbol Ptot RθJA TJ, TSTG Description Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 9 SMD General Purpose Transistor (PNP) MMBT4403 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics MMBT4403 Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage (Note 3) -40 - V IC=-1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-100µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage -5 - V IE=-100µA, IC=0 IBEV Base Cut-off Current - -0.1 μA VCE=-35V, VEB=-0.4V ICEX Collector Cut-off Current - -0.1 μA VCE=-35V, VEB=-0.4V Unit Conditions On Characteristics MMBT4403 Symbol hFE Description D.C. Current Gain VCE(sat) Collector-Emitter Saturation Voltage (Note 3) VBE(sat) Base-Emitter Saturation Voltage (Note 3) Min. Max. 30 - VCE=-1V, IC=-0.1mA 60 - VCE=-1V, IC=-1mA 100 - VCE=-1V, IC=-10mA 100 300 VCE=-2V, IC=-150mA, (Note 3) VCE=-2V, IC=-500mA, 20 - - -0.4 V IC=-150mA, IB=-15mA - -0.75 V IC=-500mA, IB=-50mA -0.75 -0.95 V IC=-150mA, IB=-15mA - -1.3 V IC=-500mA, IB=-50mA (Note 3) Rev. A/AH www.taitroncomponents.com Page 2 of 9 SMD General Purpose Transistor (PNP) MMBT4403 Small − Signal Characteristics MMBT4403 Symbol Description Current Gain-Bandwidth Product (Note 4) fT Unit Conditions - MHz VCE=-10V, IC=-20mA, f=100MHz Min. Max. 200 CCBO Collector-Base Capacitance - 8.5 pF VCB=-10V, IE=0, f=1MHz CEBO Emitter-Base Capacitance - 30 pF VEB=-0.5V, IC=0, f=1MHz hie Input Impedance 1.5 15 kΩ hre Voltage Feedback Ratio 0.1 8 x10־ hfe Small Signal Current Gain 60 500 hoe Output Admittance 1 100 4 μS VCE=-10V, IC=-1mA f=1KHz VCE=-10V, IC=-1mA f=1KHz VCE=-10V, IC=-1mA f=1KHz VCE=-10V, IC=-1mA f=1KHz Switching Characteristics MMBT4403 Symbol Description Min. Max. Unit Conditions VCC=-30V, VEB=-2V IC=-150mA, IB1=-15mA td Delay Time - 15 nS tr Rise Time - 20 nS ts Storage Time - 225 nS tf Fall Time - 30 nS VCC=-30V, IC=-150mA IB1=IB2=-15mA Note: 1. FR-5=1.0x0.75x0.062 in. 2. Alumina=0.4x0.3x0.024 in, 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which hfee x trapolates to unity. Rev. A/AH www.taitroncomponents.com Page 3 of 9 SMD General Purpose Transistor (PNP) MMBT4403 Typical Characteristics Curves ( ) Switching Time Test Circuits Fig.1-Turn-On Time Fig.2-Turn-Off Time Fig.4- Charge Data Q, Charge (nC) C, Capacitance (pF) Fig.3- Capacitance VR, Reverse Voltage (V) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 4 of 9 SMD General Purpose Transistor (PNP) MMBT4403 Fig.5- Turn-On Time t, Time (ns) tr, Rise Time (ns) Fig.6- Rise Time IC, Collector Current (mA) IC, Collector Current (mA) ts, Storage Time (ns) Fig.7- Storage Time IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 5 of 9 SMD General Purpose Transistor (PNP) MMBT4403 h PARAMETERS VCE=±10 Vdc, f=1kHz, TA=25 ° C This group of graphs illustrates the relationship between hfe and other h parameters for this series of transistors. To obtain these curves, a high±gain and a low±gain unit were selected from the MMBT4403 lines, and the same units were used to develop the correspondingly±numbered curves on each graph. Fig.9- Input Impedance hfe, DC Current Gain hie, Input Impedance (Ω) Fig.8- Current-Gain IC, Collector Current (mA) IC, Collector Current (mA) Fig.11- Output Admittance hoe, Output Admittance (µS) hre, Voltage Feedback Ratio (x10־4) Fig.10- Voltage Feedback Ratio IC, Collector Current (mA) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 6 of 9 SMD General Purpose Transistor (PNP) MMBT4403 hFE, DC Current Gain Fig.12- DC Current Gain IC, Collector Current (mA) VCE, Collector-Emitter Voltage (V) Fig.13- Collector Saturation Region IB, Base Current (mA) Rev. A/AH www.taitroncomponents.com Page 7 of 9 SMD General Purpose Transistor (PNP) MMBT4403 Fig.15- Temperature Coefficient V, Voltage (V) V, Temperature Coefficient (mV/ ° C) Fig.14- “ON” Voltages IC, Collector Current (mA) IC, Collector Current (mA) Dimensions in mm SOT-23 Rev. A/AH www.taitroncomponents.com Page 8 of 9 SMD General Purpose Transistor (PNP) MMBT4403 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 9 of 9