SMD General Purpose Transistor (NPN) MMBTA05/MMBTA06 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code MMBTA05 MMBTA06 1H/B05 1G/1GM/B06 Unit VCEO Collector-Emitter Voltage 60 80 V VCBO Collector-Base Voltage 60 80 V VEBO Emitter-Base Voltage 4.0 V Collector Current-Continuous 500 mA IC Thermal Characteristics Symbol Description MMBTA05 MMBTA06 Unit Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C 225 mW Derate above 25°C 1.8 mW/° C RθJA Thermal Resistance from Junction to Ambient 556 ° C/W Ptot Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C 300 mW Derate above 25°C 2.4 mW/° C Thermal Resistance from Junction to Ambient 417 ° C/W -55 to +150 °C Ptot RθJA TJ, TSTG Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. C/AH Page 1 of 6 SMD General Purpose Transistor (NPN) MMBTA05/MMBTA06 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics MMBTA05 Symbol MMBTA06 Description Min. Max. Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage (Note 3) 60 - 80 - V IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage 60 - 80 - V IC=100µA, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage 4.0 - 4.0 - V IE=100µA, IC=0 ICES Collector-Emitter Cut-off Current - 0.1 - 0.1 μA VCE=60V, IB=0 ICBO Collector-Base Cut-off Current - 0.1 - 0.1 VCB=60V, IE=0 VCB=80V, IE=0 MMBTA05 MMBTA06 μA On Characteristics Symbol hFE Description D.C. Current Gain Unit Conditions Min. Max. Min. Max. 100 - 100 - VCE=1V, IC=10mA 100 - 100 - VCE=1V, IC=100mA VCE(sat) Collector-Emitter Saturation Voltage - 0.25 - 0.25 V IC=100mA, IB=10mA VBE(on) Base-Emitter On Voltage - 1.2 - 1.2 V IC=100mA, VCE=1V Unit Conditions MHz VCE=2V, IC=10mA, f=100MHz Small − Signal Characteristics MMBTA05 Symbol fT MMBTA06 Description Current Gain-Bandwidth Product Min. Max. Min. Max. 100 - 100 - Note: 1. FR-5=1.0x0.75x0.062 in. 2. Alumina=0.4x0.3x0.024 in, 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which hfee x trapolates to unity. Rev. B/AH www.taitroncomponents.com Page 2 of 6 SMD General Purpose Transistor (NPN) MMBTA05/MMBTA06 Typical Characteristics Curves Fig.1-Switching Time Test Circuits Fig.3- Capacitance C, Capacitance (pF) fT, Current-Gain- Bandwidth Product (MHz) Fig.2- Current-Gain- Bandwidth Product IC, Collector Current (mA) VR, Reverse Voltage (V) Rev. B/AH www.taitroncomponents.com Page 3 of 6 SMD General Purpose Transistor (NPN) MMBTA05/MMBTA06 Fig.5- DC Current Gain t, Time (ns) hFE, DC Current Gain Fig.4- Switching Time IC, Collector Current (mA) IC, Collector Current (mA) Fig.6- “ON” Voltages V, Voltage (V) VCE, Collector-Emitter Voltage (V) Fig.7- Collector Saturation Region IC, Collector Current (mA) IB, Base Current (mA) Rev. B/AH www.taitroncomponents.com Page 4 of 6 SMD General Purpose Transistor (NPN) MMBTA05/MMBTA06 RθVB, Temperature Coefficient (mV/ ° C) Fig.8- Base–Emitter Temperature Coefficient IC, Collector Current (mA) Dimensions in mm SOT-23 Rev. B/AH www.taitroncomponents.com Page 5 of 6 SMD General Purpose Transistor (NPN) MMBTA05/MMBTA06 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/AH www.taitroncomponents.com Page 6 of 6