MMBT3906W PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES · · · SOT-323(SC-70) Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904W) Ideal for Medium Power Amplification and Switching A L "Lead free is available" COLLECTOR 1 1 V 2 BASE B S Top View 3 3 G SC-70 SOT-323 C 2 EMITTER H D J K Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –200 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3906W = 2A, K5N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –40 — –40 — –5.0 — — –50 — –50 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) IBL Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) ICEX 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Vdc Vdc Vdc nAdc nAdc REM : Thermal Clad is a trademark of the Bergquist Company. Any changing of specification will not be informed individual Page 1 of 5 MMBT3906W PNP Silicon General Purpose Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 60 80 100 60 30 — — 300 — — — — –0.25 –0.4 –0.65 — –0.85 –0.95 250 — — 4.5 — 10 2.0 12 0.1 10 100 400 3.0 60 — 4.0 Unit ON CHARACTERISTICS(3) DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) HFE Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF MHz pF pF kΩ X 10– 4 — mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –3.0 Vdc, VBE = 0.5 Vdc, IC = –10 mAdc, IB1 = –1.0 mAdc) td — 35 tr — 35 (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) ts — 225 tf — 75 v 300 ms, Duty Cycle v 2.0%. 3V +0.5 V 10.6 V < 1 ns 275 10 k 275 10 k 0 CS < 4 pF* 300 ns Duty Cycle = 2% ns 3V < 1 ns +9.1 V ns 1N916 10 < t1 < 500 ms Duty Cycle = 2% t1 CS < 4 pF* 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Figure 2. Storage and Fall Time Equivalent Test Circuit Any changing of specification will not be informed individual Page 2 of 5 MMBT3906W PNP Silicon General Purpose Transistor Elektronische Bauelemente TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, Charge (pC) Capacitance (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Bias (V) 1000 700 500 300 200 100 70 50 20 30 40 VCC = 40 V IC/IB = 10 QT 1.0 2.0 3.0 Figure 3. Capacitance 40 V 2.0 V td @ VOB = 0 V 2.0 3.0 http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 5.0 7.0 10 20 30 50 70 100 200 t f , Fall Time (ns) Time (ns) 15 V 30 20 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 1.0 200 500 IC/IB = 10 300 200 10 7 5 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) Figure 4. Charge Data 500 100 70 50 QA IC/IB = 20 100 70 50 30 20 IC/IB = 10 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 I C, Collector Current (mA) I C, Collector Current (mA) Figure 5. Turn – On Time Figure 6. Fall Time 50 70 100 200 Any changing of specification will not be informed individual Page 3 of 5 MMBT3906W PNP Silicon General Purpose Transistor Elektronische Bauelemente TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) SOURCE RESISTANCE = 200 IC = 1.0 mA NF, Noise Figure (dB) 4.0 12 W f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 W SOURCE RESISTANCE = 2.0 k IC = 50 A m 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 m 0 0.1 0.2 0.4 1.0 IC = 1.0 mA 10 NF, Noise Figure (dB) 5.0 IC = 0.5 mA 8 6 m IC = 100 mA 4 IC = 50 A 2 2.0 4.0 10 f, Frequency (kHz) 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 R g, Source Resistance (k OHMS) Figure 7. 40 100 Figure 8. h PARAMETERS (VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 m h oe, Output Admittance ( mhos) 100 h fe , DC Current Gain 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5 5.0 7.0 10 0.1 0.2 20 10 10 7.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) Figure 11. Input Impedance http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 10. Output Admittance h re , Voltage Feedback Ratio (X 10 –4 ) h ie , Input Impedance (k OHMS) Figure 9. Current Gain 0.3 5.0 7.0 10 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 12. Voltage Feedback Ratio Any changing of specification will not be informed individual Page 4 of 5 MMBT3906W PNP Silicon General Purpose Transistor Elektronische Bauelemente TYPICAL STATIC CHARACTERISTICS h FE, DC Current Gain (Normalized) 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 I C, Collector Current (mA) 10 20 30 70 50 100 200 Figure 13. DC Current Gain 1.0 VCE , Collector Emitter Voltage (V) TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 I B, Base Current (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25°C 0.8 V, Voltage (V) 1.0 VBE(sat) @ IC/IB = 10 q V, Temperature Coefficients (mV/ °C) 1.0 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 5.0 50 10 20 I C, Collector Current (mA) Figure 15. “ON” Voltages http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 100 200 0.5 qVC FOR VCE(sat) 0 +25°C TO +125°C – 55°C TO +25°C – 0.5 +25°C TO +125°C – 1.0 – 55°C TO +25°C qVB FOR VBE(sat) – 1.5 – 2.0 0 20 40 60 80 100 120 140 I C, Collector Current (mA) 160 180 200 Figure 16. Temperature Coefficients Any changing of specification will not be informed individual Page 5 of 5