MJD340 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO MJE340 AND MJE350 3 1 APPLICATIONS ■ SOLENOID/RELAY DRIVERS ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (IE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitt er-Base Voltage (IC = 0) IC I CM Collector Current Collector Peak Current (tp = 25 o C) P t ot Total Power Dissipation at T case ≤ 25 o C T stg Storage T emperature Tj Max Operating Junction T emperature Valu e Un it NPN MJD340 PNP MJD350 300 V 300 V 3 V 0.5 0.75 A A 15 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. June 1997 1/5 MJD340 / MJD350 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 8.33 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CBO Collector Cut-off Current (v bE = 0) V CB = 300 V 0.1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 3 V 0.1 mA Collector-Emitter Sustaining Voltage I C = 1 mA DC Current G ain I C = 50 mA V CEO(sus) h FE∗ Parameter Test Cond ition s 2/5 Typ . 300 V CE = 10 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. Safe Operating Area Min. Derating Curve 30 V 240 MJD340 / MJD350 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) 3/5 MJD340 / MJD350 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = = E B2 3 B DETAIL ”A” L4 0068772-B 4/5 MJD340 / MJD350 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5