STMICROELECTRONICS MJD340

MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MEDIUM VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
ELECTRICAL SIMILAR TO MJE340 AND
MJE350
3
1
APPLICATIONS
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SOLENOID/RELAY DRIVERS
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GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial Planar technology, resulting in a rugged
high performance cost-effective transistor.
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CBO
Collector-Base Voltage (IE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitt er-Base Voltage (IC = 0)
IC
I CM
Collector Current
Collector Peak Current (tp = 25 o C)
P t ot
Total Power Dissipation at T case ≤ 25 o C
T stg
Storage T emperature
Tj
Max Operating Junction T emperature
Valu e
Un it
NPN
MJD340
PNP
MJD350
300
V
300
V
3
V
0.5
0.75
A
A
15
W
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
June 1997
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MJD340 / MJD350
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
8.33
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Max.
Un it
I CBO
Collector Cut-off
Current (v bE = 0)
V CB = 300 V
0.1
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 3 V
0.1
mA
Collector-Emitter
Sustaining Voltage
I C = 1 mA
DC Current G ain
I C = 50 mA
V CEO(sus)
h FE∗
Parameter
Test Cond ition s
2/5
Typ .
300
V CE = 10 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Min.
Derating Curve
30
V
240
MJD340 / MJD350
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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MJD340 / MJD350
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
=
E
B2
3
B
DETAIL ”A”
L4
0068772-B
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MJD340 / MJD350
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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