MMBT6520 - Taitron Components, Inc.

SMD High Voltage
Transistor (PNP)
MMBT6520
SMD High Voltage Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case:
SOT-23
SOT-23, Plastic Package
Terminals:
Weight:
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Marking Code
MMBT6520
Unit
2Z
VCEO
Collector-Emitter Voltage
-350
V
VCBO
Collector-Base Voltage
-350
V
VEBO
Emitter-Base Voltage
-5.0
V
IB
Base Current
-250
mA
IC
Collector Current-Continuous
-500
mA
MMBT6520
Unit
Total Device Dissipation FR-5 Board, (Note 1)
TA= 25°C
225
mW
Derate above 25°C
1.8
mW/° C
RθJA
Thermal Resistance from Junction to Ambient
556
° C/W
Ptot
Total Device Dissipation Alumina Substrate, (Note 2)
TA= 25°C,
300
mW
Derate above 25°C
2.4
mW/° C
Thermal Resistance from Junction to Ambient
417
° C/W
-55 to +150
°C
Thermal Characteristics
Symbol
Ptot
RθJA
TJ, TSTG
Description
Junction and Storage Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 6
SMD High Voltage Transistor (PNP)
MMBT6520
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
MMBT6520
Symbol
Description
Min.
Max.
Unit
Conditions
V(BR)CEO
Collector-Emitter Breakdown Voltage
-350
-
V
IC=-1mA
V(BR)CBO
Collector-Base Breakdown Voltage
-350
-
V
IE=-100µA
V(BR)EBO
Emitter-Base Breakdown Voltage
-5.0
-
V
IE=-10µA
ICBO
Collector-Base Cut-off Current
-
-50
nA
VCB=-250V
IEBO
Emitter-Base Cut-off Current
-
-50
nA
VEB=-4V
Unit
Conditions
On Characteristics
MMBT6520
Symbol
hFE
VCE(sat)
VBE(sat)
VBE(on)
Description
D.C. Current Gain
Min.
Max.
20
-
VCE=-10V, IC=-1mA
30
-
VCE=-10V, IC=-10mA
30
200
VCE=-10V, IC=-30mA
20
200
VCE=-10V, IC=-50mA
15
-
VCE=-10V, IC=-100mA
-
-0.30
V
IC=-10mA, IB=-1mA
-
-0.35
V
IC=-20mA, IB=-2mA
-
-0.50
V
IC=-30mA, IB=-3mA
-
-0.10
V
IC=-50mA, IB=-5mA
-
-0.75
V
IC=-10mA, IB=-1mA
-
-0.85
V
IC=-20mA, IB=-2mA
-
-0.90
V
IC=-30mA, IB=-3mA
-
-2.0
V
VCE=-10V IC=-100mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Rev. A/AH
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Page 2 of 7
SMD High Voltage Transistor (PNP)
MMBT6520
Small − Signal Characteristics
MMBT6520
Symbol
fT
Description
Current Gain-Bandwidth Product
Unit
Conditions
200
MHz
VCE=-20V, IC=-10mA,
f=20MHz
Min.
Max.
40
CCBO
Collector-Base Capacitance
-
6
pF
VCB=-20V, f=1MHz
CEBO
Emitter-Base Capacitance
-
100
pF
VEB=-0.5V, f=1MHz
Note: 1. FR-5=1.0x0.75x0.062 in.
2. Alumina=0.4x0.3x0.024 in, 99.5% alumina.
Typical Characteristics Curves
Fig.2- Current Gain-Bandwidth Product
hFE, DC Current Gain
fT, Current Gain-Bandwidth Product (MHz)
Fig.1- DC Current Gain
IC, Collector Current (mA)
IC, Collector Current (mA)
Rev. A/AH
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Page 3 of 7
SMD High Voltage Transistor (PNP)
MMBT6520
Fig.3- “ON” Voltages
V, Voltage (V)
RθV, Temperature Coefficient (mV/ ° C)
Fig.4- Temperature Coefficient
IC, Collector Current (mA)
Fig.5- Capacitance
Fig.6- Turn-On Time
t, Time (ns)
C, Capacitance (pF)
IC, Collector Current (mA)
VR, Reverse Voltage (V)
IC, Collector Current (mA)
Rev. A/AH
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Page 4 of 7
SMD High Voltage Transistor (PNP)
MMBT6520
t, Time (ns)
Fig.7- Turn-On Time
IC, Collector Current (mA)
Fig.8-Switching Time Test Circuits
Rev. A/AH
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Page 5 of 7
SMD High Voltage Transistor (PNP)
MMBT6520
Response (Normalized)
Fig.9- Thermal Response
t, Time (ms)
Rev. A/AH
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Page 6 of 7
SMD High Voltage Transistor (PNP)
MMBT6520
Dimensions in mm
SOT-23
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
www.taitroncomponents.com
Page 7 of 7