SMD High Voltage Transistor (PNP) MMBT6520 SMD High Voltage Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: SOT-23 SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code MMBT6520 Unit 2Z VCEO Collector-Emitter Voltage -350 V VCBO Collector-Base Voltage -350 V VEBO Emitter-Base Voltage -5.0 V IB Base Current -250 mA IC Collector Current-Continuous -500 mA MMBT6520 Unit Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C 225 mW Derate above 25°C 1.8 mW/° C RθJA Thermal Resistance from Junction to Ambient 556 ° C/W Ptot Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, 300 mW Derate above 25°C 2.4 mW/° C Thermal Resistance from Junction to Ambient 417 ° C/W -55 to +150 °C Thermal Characteristics Symbol Ptot RθJA TJ, TSTG Description Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 6 SMD High Voltage Transistor (PNP) MMBT6520 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics MMBT6520 Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage -350 - V IC=-1mA V(BR)CBO Collector-Base Breakdown Voltage -350 - V IE=-100µA V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - V IE=-10µA ICBO Collector-Base Cut-off Current - -50 nA VCB=-250V IEBO Emitter-Base Cut-off Current - -50 nA VEB=-4V Unit Conditions On Characteristics MMBT6520 Symbol hFE VCE(sat) VBE(sat) VBE(on) Description D.C. Current Gain Min. Max. 20 - VCE=-10V, IC=-1mA 30 - VCE=-10V, IC=-10mA 30 200 VCE=-10V, IC=-30mA 20 200 VCE=-10V, IC=-50mA 15 - VCE=-10V, IC=-100mA - -0.30 V IC=-10mA, IB=-1mA - -0.35 V IC=-20mA, IB=-2mA - -0.50 V IC=-30mA, IB=-3mA - -0.10 V IC=-50mA, IB=-5mA - -0.75 V IC=-10mA, IB=-1mA - -0.85 V IC=-20mA, IB=-2mA - -0.90 V IC=-30mA, IB=-3mA - -2.0 V VCE=-10V IC=-100mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Rev. A/AH www.taitroncomponents.com Page 2 of 7 SMD High Voltage Transistor (PNP) MMBT6520 Small − Signal Characteristics MMBT6520 Symbol fT Description Current Gain-Bandwidth Product Unit Conditions 200 MHz VCE=-20V, IC=-10mA, f=20MHz Min. Max. 40 CCBO Collector-Base Capacitance - 6 pF VCB=-20V, f=1MHz CEBO Emitter-Base Capacitance - 100 pF VEB=-0.5V, f=1MHz Note: 1. FR-5=1.0x0.75x0.062 in. 2. Alumina=0.4x0.3x0.024 in, 99.5% alumina. Typical Characteristics Curves Fig.2- Current Gain-Bandwidth Product hFE, DC Current Gain fT, Current Gain-Bandwidth Product (MHz) Fig.1- DC Current Gain IC, Collector Current (mA) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 3 of 7 SMD High Voltage Transistor (PNP) MMBT6520 Fig.3- “ON” Voltages V, Voltage (V) RθV, Temperature Coefficient (mV/ ° C) Fig.4- Temperature Coefficient IC, Collector Current (mA) Fig.5- Capacitance Fig.6- Turn-On Time t, Time (ns) C, Capacitance (pF) IC, Collector Current (mA) VR, Reverse Voltage (V) IC, Collector Current (mA) Rev. A/AH www.taitroncomponents.com Page 4 of 7 SMD High Voltage Transistor (PNP) MMBT6520 t, Time (ns) Fig.7- Turn-On Time IC, Collector Current (mA) Fig.8-Switching Time Test Circuits Rev. A/AH www.taitroncomponents.com Page 5 of 7 SMD High Voltage Transistor (PNP) MMBT6520 Response (Normalized) Fig.9- Thermal Response t, Time (ms) Rev. A/AH www.taitroncomponents.com Page 6 of 7 SMD High Voltage Transistor (PNP) MMBT6520 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 7 of 7