DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. FEATURES • Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package • Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) • High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) : dd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) • High drain efficiency : dd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) : IM3 (Q1) = <40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA, • Low intermodulation distortion f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) ) <R> • Single Supply (VDS : 3 V VDS ) 32 V) • Excellent Thermal Stability • Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP • Integrated ESD protection • Excellent stability against HCI (Hot Carrier Injection) APPLICATION <R> • Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc. • UHF-band TV transmitter PA Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. 2004, 2007 Document No. PU10542EJ03V0DS (3rd edition) Date Published January 2007 NS CP(N) The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NE55410GR ORDERING INFORMATION Part Number NE55410GR Order Number NE55410GR-T3-AZ Package Marking 16-pin plastic HTSSOP 55410 (Pb-Free) Supplying Form % Embossed tape 12 mm wide Note % Pin 1 and 8 indicates pull-out direction of tape % Qty 1 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE55410GR PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 9 S (Top View) Pin No. Pin Name Pin No. Pin Name S 1 Source 9 Source S Q1 10 11 S S S 12 13 S 8 2 Drain (Q2) 10 Gate (Q1) 7 3 Drain (Q2) 11 Source 6 4 Drain (Q2) 12 Drain (Q1) 5 Drain (Q2) 13 Source 6 Source 14 Gate (Q2) 2 7 Gate (Q1) 15 Gate (Q2) 1 8 Source 16 Source 5 4 Q2 14 3 15 16 S S S Remark All the terminals of a Q2 connected to a S circuit. Backside : Source (S) ABSOLUTE MAXIMUM RATINGS (TA = +25$C, unless otherwise specified) P a r am et er S y m bo l Tes t C o nd i t i ons R a ti ng s Unit Drain to Source Voltage VDS 65 V Gate to Source Voltage VGS (7 V Drain Current (Q1) ID (Q1) 0.25 A Drain Current (Q2) ID (Q2) 1.0 A Ptot 40 W Total Device Dissipation (Tcase = 25$C) Input Power (Q1) Pin (Q1) f = 2.14 GHz, VDS = 28 V 0.3 W Input Power (Q2) Pin (Q2) f = 2.14 GHz, VDS = 28 V 1.5 W Channel Temperature Tch 150 $C Storage Temperature Tstg <65 to +150 $C 2 Data Sheet PU10542EJ03V0DS NE55410GR THERMAL RESISTANCE (TA = +25$C) Parameter Symbol Channel to Case Resistance Test Conditions Rth (ch-c) MIN. TYP. MAX. Unit < 2.5 3.0 $C/W MIN. TYP. MAX. Unit RECOMMENDED OPERATING CONDITIONS (TA = +25$C) Parameter <R> Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS < 28 32 V Gate to Source Voltage VGS 2.7 3.3 3.7 V Input Power (Q1), CW Pin (Q1) < 15 23 dBm Pin (Q2) < 20 30 dBm Average Output Power (Q1), CW Note PO (ave.) (Q1) < < 24 dBm Average Output Power (Q2), CW Note PO (ave.) (Q2) < < 30 dBm Input Power (Q2), CW <R> <R> <R> Note When mounting on the PWB that our company recommends. ELECTRICAL CHARACTERISTICS (TA = +25$C) Parameter Symbol Test Conditions Q1 Gate to Source Leak Current IGSS (Q1) VGSS = 5V < < 1 +A Drain to Source Leakage Current IDSS (Q1) VDSS = 65 V < < 1 mA Gate Threshold Voltage Vth (Q1) VDS = 10 V, IDS = 1 mA 2.2 2.8 3.4 V Transconductance gm (Q1) VDS = 28 V, IDS = 20 mA < 0.09 < S 65 75 < V Drain to Source Breakdown Voltage BVDSS (Q1) IDSS = 10 +A Q2 Gate to Source Leak Current IGSS (Q2) VGSS = 5V < < 1 +A Drain to Source Leakage Current IDSS (Q2) VDSS = 65 V < < 1 mA Gate Threshold Voltage Vth (Q2) VDS = 10 V, IDS = 1 mA 2.0 2.6 3.2 V Transconductance gm (Q2) VDS = 28 V, IDS = 100 mA < 0.45 < S 65 75 < V Drain to Source Breakdown Voltage BVDSS (Q2) IDSS = 10 +A Data Sheet PU10542EJ03V0DS 3 NE55410GR <R> RF CHARACTERISTICS (TA = +25$C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gain 1 dB Compression Output Power PO (1 dB) f = 2 140 MHz, VDS = 28 V, < 35.4 < dBm IDset = 20 mA < 52 < % 12 1 3. 5 < dB f = 2 140 MHz, VDS = 28 V, < 40.4 < dBm IDset = 100 mA < 46 < % 9 .5 11 < dB f = 1 840 MHz, VDS = 28 V, < 40.5 < dBm IDset = 100 mA < 49 < % < 14 < dB Q1 Drain Efficiency Linear Gain dd GL Note1 Q2 Gain 1 dB Compression Output Power Drain Efficiency PO (1 dB) dd Note2 Linear Gain GL Gain 1 dB Compression Output Power PO (1 dB) Drain Efficiency Linear Gain dd GL Note2 Q1 + Q2 Gain 1 dB Compression Output Power Drain Efficiency PO (1 dB) f = 880 MHz, VDS = 28 V, < 41.5 < dBm dd IDset = 120 mA (Q1 + Q2) < 55 < % < 30 < dB f = 2 140 MHz, VDS = 28 V, < 40.0 < dBm IDset = 120 mA (Q1 + Q2) 34 42 < % 39 40 < dB 24 25 < dB < <40 < dBc < 21 < % Note3 Linear Gain GL Gain 1 dB Compression Output Power PO (1 dB) Drain Efficiency dd Output Power Pout Linear Gain 3rd Order Intermodulation Distortion Drain Efficiency GL Note4 IM3 dd f = 2 132.5/2 147.5 MHz, VDS = 28 V, 2 carrier W-CDMA 3GPP, Test Model1, 64DPCH, 67% Clipping, IDset = 120 mA (Q1 + Q2), Ave Pout = 33 dBm Notes 1. Pin = 15 dBm 2. Pin = 20 dBm 3. Pin = 5 dBm 4. Pin = 10 dBm 4 Data Sheet PU10542EJ03V0DS NE55410GR GAIN, DRAIN EFFICIENCY, vs. OUTPUT POWER 34 Gain G (dB) 32 80 f = 840 MHz 860 MHz 880 MHz 900 MHz 920 MHz 70 60 G 50 30 40 28 dd 26 30 24 20 22 10 20 20 25 30 35 Drain Efficiency dd (%) 36 0 45 40 Output Power Pout (dBm) 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) TYPICAL CHARACTERISTICS (TA = +25$C, VDS = 28 V, IDset = 120 mA, unless otherwise specified) IM3/IM5 vs. 2 TONES OUTPUT POWER –10 Lower Upper –20 IM3 –30 –40 –50 IM5 –60 –70 15 CW, f = 960 MHz, 1 MHz Spacing 20 25 30 35 40 45 2 tones Output Power Pout (dBm) 30 80 28 70 60 Gain G (dB) 26 G 24 50 22 40 30 20 dd 18 f = 2.09 GHz 2.11 GHz 2.14 GHz 2.17 GHz 2.19 GHz 35 40 16 14 20 25 30 20 Drain Efficiency dd (%) GAIN, DRAIN EFFICIENCY, vs. OUTPUT POWER 10 0 45 IM3/IM5, DRAIN EFFICIENCY, vs. 2 TONES OUTPUT POWER –20 –25 100 Lower Upper 90 –30 80 IM3 –35 70 IM5 –40 60 –45 50 –50 40 –55 30 dd –60 20 –65 10 –70 15 20 25 30 35 40 Drain Efficiency dd (%) 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) Output Power Pout (dBm) W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Center Frequency 2.14GHz, 15 MHz spacing 0 45 2 tones Output Power Pout (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10542EJ03V0DS 5 NE55410GR <R> S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] A [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html 6 Data Sheet PU10542EJ03V0DS NE55410GR EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA) VDS (+28 V) + B 47+F 6.8 k1 0.22 +F 2.2 k1 0.001 +F NE55410GR 1 k1 TL5 (open)7 Q1 TL4 12 RFin TL1 TL2 TL3 10 TL7 A 47 pF 15 1 47 pF TL6 S 3 pF 14 TL8 A TL9 TL10 TL11 TL19 2 3 4 5 Q2 15 15 pF TL12 TL14 TL15 9 pF 12 pF 4 pF TL18 RFout 47 pF 6 pF 2.2 nH TL17 TL13 S 10 1 TL16 2 pF 2 pF S S S S S S S S 1 6 8 9 11 13 16 56 nH (Back side) 0.22 +F 18 1 0.047 +F Symbol 6.8 k1 B 1 k1 Width (mm) Length (mm) Symbol Width (mm) Length (mm) TL1 1.0 3.0 TL11 1.0 3.0 TL2 4.5 10.0 TL12 1.0 5.0 TL3 0.5 16.0 TL13 0.8 48.0 TL4 0.5 5.0 TL14 1.0 6.5 TL5 1.0 48.0 TL15 1.0 10.5 TL6 1.0 4.0 TL16 1.0 9.5 TL7 1.0 3.0 TL17 1.0 10.0 TL8 1.0 6.0 TL18 1.0 6.0 TL9 1.0 3.0 TL19 1.0 3.0 TL10 1.0 4.0 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10542EJ03V0DS 7 NE55410GR EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA) VDS (Q2), +28 V VGS (Q1), +28 V 6.8 k1 0.22 +F 2.2 k1 15 1 47 +F 1 k1 (Valiable) 0.22 +F RF in 47 pF 6 pF 47 pF 2 pF 55410 4 pF 12 pF 3 pF 2 pF 2.2 nH 15 pF 1.5 pF 47 pF RF out 0.001 +F 18 1 VDS (Q1), +28 V 8 10 1 56 nH 1 k1 (Valiable) 6.8 k1 0.047 + F VGS (Q2), +28 V Data Sheet PU10542EJ03V0DS 9 pF NE55410GR EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA) VDS (+28 V) + B 22 +F 6.8 k1 0.22 +F TL3 0.22 +F NE55410GR 1 k1 TL8 10 1 RFin TL1 TL2 7 (open) TL4 TL5 TL6 Q1 12 TL7 10 TL10 TL9 TL11 A 33 pF 47 pF S 1 pF 2 pF 8.5 pF TL13 TL12 A 14 2 3 4 5 Q2 15 0.75 pF S TL15 TL17 TL18 TL16 3 pF 1 pF TL21 RFout 15 pF 10 1 12 nH TL19 TL20 1 pF S S S S S S S S 1 6 8 9 11 13 16 TL14 (Back side) 0.22 +F 10 1 0.22 +F 6.8 k1 B 1 k1 Symbol Width (mm) Length (mm) Symbol Width (mm) Length (mm) TL1 1.0 17.0 TL12 1.0 4.0 TL2 1.0 4.0 TL13 1.0 4.5 TL3 1.0 24.5 TL14 1.0 25.0 TL4 1.0 2.5 TL15 2.5 2.5 TL5 1.0 3.0 TL16 1.0 27.0 TL6 0.5 2.5 TL17 1.0 2.0 TL7 0.5 4.5 TL18 5.0 4.0 TL8 1.0 25.5 TL19 5.0 2.0 TL9 1.0 2.5 TL20 1.0 12.5 TL10 4.5 4.5 TL21 1.0 5.5 TL11 1.0 3.5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10542EJ03V0DS 9 NE55410GR EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA) VGS (Q1), +28 V VDS (Q2), +28 V 1 k1 (Potentiometer) 6.8 k1 10 1 0.22 +F 22 +F 0.22 +F RF in 15 pF 0.5 pF 2 pF 33 pF 3 pF 55410 <R> 1 pF 1.0 pF RF out 0.22 +F 12 nH 10 1 15 pF 0.75 pF 10 1 1 pF 0.22 +F 6.8 k1 1 k1 (Potentiometer) VGS (Q2), +28 V VDS (Q1), +28 V 10 Data Sheet PU10542EJ03V0DS NE55410GR PACKAGE DIMENSIONS 16-PIN PLASTIC HTSSOP (UNIT: mm) (0.5) (0.4) 9 16 (2.7) 5.5±0.3 55410 8 NEC 0.20±0.10 0.65±0.1 (1.8) 0.20±0.10 6.4±0.3 1 (0.1) 5.2±0.2 (2.5) 0.9±0.2 (1.5) Remark ( ): Reference value LAND PATTERN (UNIT: mm) 6.40 5.20 0.20 0.28 5.50 0.65 1.50 0.20 0.50 0.24 0.50 1.00 0.28 1.15 0.28 0.24 0.50 0.40 0.10 1.50 4.00 0.48 Remarks1. Via holes : 158 holes <R> 2. Hole size : q 0.15 mm 3. Min. spacing : 0.354 mm 4. : Solder resist or etching Data Sheet PU10542EJ03V0DS 11 NE55410GR RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering S o l d e r i n g C on di t io n s Co ndi ti on Sym bo l Peak temperature (package surface temperature) : 260$C or below Time at peak temperature : 10 seconds or less Time at temperature of 220$C or higher : 60 seconds or less Preheating time at 120 to 180$C : 120(30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260$C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120$C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350$C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 12 Data Sheet PU10542EJ03V0DS HS350 NE55410GR % The information in this document is current as of January, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. % No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. % NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. % Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. % While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. % NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.