CEL NE55410GR_07

DATA SHEET
LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
N-CHANNEL SILICON POWER LDMOS FET
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
FEATURES
• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
• Over 25 dB gain available by connecting two FET’s in series
: GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
: dd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
• High drain efficiency
: dd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
: IM3 (Q1) = <40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA,
• Low intermodulation distortion
f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) )
<R>
• Single Supply (VDS : 3 V VDS ) 32 V)
• Excellent Thermal Stability
• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
• Integrated ESD protection
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
<R>
• Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc.
• UHF-band TV transmitter PA
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
2004, 2007
Document No. PU10542EJ03V0DS (3rd edition)
Date Published January 2007 NS CP(N)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE55410GR
ORDERING INFORMATION
Part Number
NE55410GR
Order Number
NE55410GR-T3-AZ
Package
Marking
16-pin plastic HTSSOP
55410
(Pb-Free)
Supplying Form
% Embossed tape 12 mm wide
Note
% Pin 1 and 8 indicates pull-out direction of tape
% Qty 1 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE55410GR
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
9
S
(Top View)
Pin No.
Pin Name
Pin No.
Pin Name
S
1
Source
9
Source
S
Q1
10
11
S
S
S
12
13
S
8
2
Drain (Q2)
10
Gate (Q1)
7
3
Drain (Q2)
11
Source
6
4
Drain (Q2)
12
Drain (Q1)
5
Drain (Q2)
13
Source
6
Source
14
Gate (Q2)
2
7
Gate (Q1)
15
Gate (Q2)
1
8
Source
16
Source
5
4
Q2
14
3
15
16
S
S
S
Remark All the terminals of a Q2 connected to a
S
circuit. Backside : Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = +25$C, unless otherwise specified)
P a r am et er
S y m bo l
Tes t C o nd i t i ons
R a ti ng s
Unit
Drain to Source Voltage
VDS
65
V
Gate to Source Voltage
VGS
(7
V
Drain Current (Q1)
ID (Q1)
0.25
A
Drain Current (Q2)
ID (Q2)
1.0
A
Ptot
40
W
Total Device Dissipation (Tcase = 25$C)
Input Power (Q1)
Pin (Q1)
f = 2.14 GHz, VDS = 28 V
0.3
W
Input Power (Q2)
Pin (Q2)
f = 2.14 GHz, VDS = 28 V
1.5
W
Channel Temperature
Tch
150
$C
Storage Temperature
Tstg
<65 to +150
$C
2
Data Sheet PU10542EJ03V0DS
NE55410GR
THERMAL RESISTANCE (TA = +25$C)
Parameter
Symbol
Channel to Case Resistance
Test Conditions
Rth (ch-c)
MIN.
TYP.
MAX.
Unit
<
2.5
3.0
$C/W
MIN.
TYP.
MAX.
Unit
RECOMMENDED OPERATING CONDITIONS (TA = +25$C)
Parameter
<R>
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
<
28
32
V
Gate to Source Voltage
VGS
2.7
3.3
3.7
V
Input Power (Q1), CW
Pin (Q1)
<
15
23
dBm
Pin (Q2)
<
20
30
dBm
Average Output Power (Q1), CW
Note
PO (ave.) (Q1)
<
<
24
dBm
Average Output Power (Q2), CW
Note
PO (ave.) (Q2)
<
<
30
dBm
Input Power (Q2), CW
<R>
<R>
<R>
Note When mounting on the PWB that our company recommends.
ELECTRICAL CHARACTERISTICS (TA = +25$C)
Parameter
Symbol
Test Conditions
Q1
Gate to Source Leak Current
IGSS (Q1)
VGSS = 5V
<
<
1
+A
Drain to Source Leakage Current
IDSS (Q1)
VDSS = 65 V
<
<
1
mA
Gate Threshold Voltage
Vth (Q1)
VDS = 10 V, IDS = 1 mA
2.2
2.8
3.4
V
Transconductance
gm (Q1)
VDS = 28 V, IDS = 20 mA
<
0.09
<
S
65
75
<
V
Drain to Source Breakdown Voltage
BVDSS (Q1) IDSS = 10 +A
Q2
Gate to Source Leak Current
IGSS (Q2)
VGSS = 5V
<
<
1
+A
Drain to Source Leakage Current
IDSS (Q2)
VDSS = 65 V
<
<
1
mA
Gate Threshold Voltage
Vth (Q2)
VDS = 10 V, IDS = 1 mA
2.0
2.6
3.2
V
Transconductance
gm (Q2)
VDS = 28 V, IDS = 100 mA
<
0.45
<
S
65
75
<
V
Drain to Source Breakdown Voltage
BVDSS (Q2) IDSS = 10 +A
Data Sheet PU10542EJ03V0DS
3
NE55410GR
<R>
RF CHARACTERISTICS (TA = +25$C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gain 1 dB Compression Output Power
PO (1 dB)
f = 2 140 MHz, VDS = 28 V,
<
35.4
<
dBm
IDset = 20 mA
<
52
<
%
12
1 3. 5
<
dB
f = 2 140 MHz, VDS = 28 V,
<
40.4
<
dBm
IDset = 100 mA
<
46
<
%
9 .5
11
<
dB
f = 1 840 MHz, VDS = 28 V,
<
40.5
<
dBm
IDset = 100 mA
<
49
<
%
<
14
<
dB
Q1
Drain Efficiency
Linear Gain
dd
GL
Note1
Q2
Gain 1 dB Compression Output Power
Drain Efficiency
PO (1 dB)
dd
Note2
Linear Gain
GL
Gain 1 dB Compression Output Power
PO (1 dB)
Drain Efficiency
Linear Gain
dd
GL
Note2
Q1 + Q2
Gain 1 dB Compression Output Power
Drain Efficiency
PO (1 dB)
f = 880 MHz, VDS = 28 V,
<
41.5
<
dBm
dd
IDset = 120 mA (Q1 + Q2)
<
55
<
%
<
30
<
dB
f = 2 140 MHz, VDS = 28 V,
<
40.0
<
dBm
IDset = 120 mA (Q1 + Q2)
34
42
<
%
39
40
<
dB
24
25
<
dB
<
<40
<
dBc
<
21
<
%
Note3
Linear Gain
GL
Gain 1 dB Compression Output Power
PO (1 dB)
Drain Efficiency
dd
Output Power
Pout
Linear Gain
3rd Order Intermodulation Distortion
Drain Efficiency
GL
Note4
IM3
dd
f = 2 132.5/2 147.5 MHz, VDS = 28 V,
2 carrier W-CDMA 3GPP, Test Model1,
64DPCH, 67% Clipping,
IDset = 120 mA (Q1 + Q2),
Ave Pout = 33 dBm
Notes 1. Pin = 15 dBm
2. Pin = 20 dBm
3. Pin = 5 dBm
4. Pin = 10 dBm
4
Data Sheet PU10542EJ03V0DS
NE55410GR
GAIN, DRAIN EFFICIENCY,
vs. OUTPUT POWER
34
Gain G (dB)
32
80
f = 840 MHz
860 MHz
880 MHz
900 MHz
920 MHz
70
60
G
50
30
40
28
dd
26
30
24
20
22
10
20
20
25
30
35
Drain Efficiency dd (%)
36
0
45
40
Output Power Pout (dBm)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
TYPICAL CHARACTERISTICS (TA = +25$C, VDS = 28 V, IDset = 120 mA, unless otherwise specified)
IM3/IM5 vs. 2 TONES OUTPUT POWER
–10
Lower
Upper
–20
IM3
–30
–40
–50
IM5
–60
–70
15
CW, f = 960 MHz,
1 MHz Spacing
20
25
30
35
40
45
2 tones Output Power Pout (dBm)
30
80
28
70
60
Gain G (dB)
26
G
24
50
22
40
30
20
dd
18
f = 2.09 GHz
2.11 GHz
2.14 GHz
2.17 GHz
2.19 GHz
35
40
16
14
20
25
30
20
Drain Efficiency dd (%)
GAIN, DRAIN EFFICIENCY,
vs. OUTPUT POWER
10
0
45
IM3/IM5, DRAIN EFFICIENCY,
vs. 2 TONES OUTPUT POWER
–20
–25
100
Lower
Upper
90
–30
80
IM3
–35
70
IM5
–40
60
–45
50
–50
40
–55
30
dd
–60
20
–65
10
–70
15
20
25
30
35
40
Drain Efficiency dd (%)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
Output Power Pout (dBm)
W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping,
Center Frequency 2.14GHz,
15 MHz spacing
0
45
2 tones Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10542EJ03V0DS
5
NE55410GR
<R>
S-PARAMETERS
S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a
microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] A [Device Parameters]
URL http://www.ncsd.necel.com/microwave/index.html
6
Data Sheet PU10542EJ03V0DS
NE55410GR
EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA)
VDS (+28 V)
+
B
47+F
6.8 k1
0.22 +F
2.2 k1
0.001 +F
NE55410GR
1 k1
TL5
(open)7
Q1
TL4
12
RFin
TL1
TL2
TL3 10
TL7
A
47 pF
15 1
47 pF
TL6
S
3 pF
14
TL8
A
TL9
TL10
TL11
TL19
2
3
4
5
Q2
15
15 pF
TL12
TL14
TL15
9 pF
12 pF
4 pF
TL18 RFout
47 pF
6 pF
2.2 nH
TL17
TL13
S
10 1
TL16
2 pF
2 pF
S S S S S S S S
1 6 8 9 11 13 16
56 nH
(Back side)
0.22 +F
18 1
0.047
+F
Symbol
6.8 k1
B
1 k1
Width (mm) Length (mm)
Symbol
Width (mm) Length (mm)
TL1
1.0
3.0
TL11
1.0
3.0
TL2
4.5
10.0
TL12
1.0
5.0
TL3
0.5
16.0
TL13
0.8
48.0
TL4
0.5
5.0
TL14
1.0
6.5
TL5
1.0
48.0
TL15
1.0
10.5
TL6
1.0
4.0
TL16
1.0
9.5
TL7
1.0
3.0
TL17
1.0
10.0
TL8
1.0
6.0
TL18
1.0
6.0
TL9
1.0
3.0
TL19
1.0
3.0
TL10
1.0
4.0
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10542EJ03V0DS
7
NE55410GR
EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA)
VDS (Q2), +28 V
VGS (Q1), +28 V
6.8 k1 0.22 +F
2.2 k1
15 1
47 +F
1 k1
(Valiable)
0.22 +F
RF in
47 pF
6 pF
47 pF
2 pF
55410
4 pF
12 pF
3 pF
2 pF
2.2 nH
15 pF
1.5 pF
47 pF
RF out
0.001 +F
18 1
VDS (Q1), +28 V
8
10 1
56 nH
1 k1
(Valiable)
6.8 k1
0.047 + F
VGS (Q2), +28 V
Data Sheet PU10542EJ03V0DS
9 pF
NE55410GR
EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA)
VDS (+28 V)
+
B
22 +F
6.8 k1
0.22 +F
TL3
0.22 +F
NE55410GR
1 k1
TL8
10 1
RFin
TL1
TL2
7
(open)
TL4
TL5
TL6
Q1
12
TL7
10
TL10
TL9
TL11
A
33 pF
47 pF
S
1 pF
2 pF
8.5 pF
TL13
TL12
A
14
2
3
4
5
Q2
15
0.75 pF
S
TL15
TL17 TL18
TL16
3 pF
1 pF
TL21 RFout
15 pF
10 1
12 nH
TL19 TL20
1 pF
S S S S S S S S
1 6 8 9 11 13 16
TL14
(Back side)
0.22 +F
10 1
0.22 +F
6.8 k1
B
1 k1
Symbol
Width (mm) Length (mm)
Symbol
Width (mm) Length (mm)
TL1
1.0
17.0
TL12
1.0
4.0
TL2
1.0
4.0
TL13
1.0
4.5
TL3
1.0
24.5
TL14
1.0
25.0
TL4
1.0
2.5
TL15
2.5
2.5
TL5
1.0
3.0
TL16
1.0
27.0
TL6
0.5
2.5
TL17
1.0
2.0
TL7
0.5
4.5
TL18
5.0
4.0
TL8
1.0
25.5
TL19
5.0
2.0
TL9
1.0
2.5
TL20
1.0
12.5
TL10
4.5
4.5
TL21
1.0
5.5
TL11
1.0
3.5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10542EJ03V0DS
9
NE55410GR
EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA)
VGS (Q1), +28 V
VDS (Q2), +28 V
1 k1
(Potentiometer)
6.8 k1
10 1
0.22 +F
22 +F
0.22 +F
RF in
15 pF
0.5 pF
2 pF
33 pF
3 pF
55410
<R>
1 pF
1.0 pF
RF out
0.22 +F
12 nH
10 1
15 pF
0.75 pF
10 1
1 pF 0.22 +F
6.8 k1
1 k1
(Potentiometer)
VGS (Q2), +28 V
VDS (Q1), +28 V
10
Data Sheet PU10542EJ03V0DS
NE55410GR
PACKAGE DIMENSIONS
16-PIN PLASTIC HTSSOP (UNIT: mm)
(0.5)
(0.4)
9
16
(2.7)
5.5±0.3
55410
8
NEC
0.20±0.10
0.65±0.1
(1.8)
0.20±0.10
6.4±0.3
1
(0.1)
5.2±0.2
(2.5)
0.9±0.2
(1.5)
Remark ( ): Reference value
LAND PATTERN (UNIT: mm)
6.40
5.20
0.20
0.28
5.50
0.65
1.50
0.20
0.50
0.24
0.50
1.00
0.28
1.15
0.28
0.24
0.50
0.40
0.10
1.50
4.00
0.48
Remarks1. Via holes : 158 holes
<R>
2. Hole size : q 0.15 mm
3. Min. spacing : 0.354 mm
4.
: Solder resist or etching
Data Sheet PU10542EJ03V0DS
11
NE55410GR
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
S o l d e r i n g C on di t io n s
Co ndi ti on Sym bo l
Peak temperature (package surface temperature)
: 260$C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220$C or higher
: 60 seconds or less
Preheating time at 120 to 180$C
: 120(30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260$C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120$C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350$C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Caution Do not use different soldering methods together (except for partial heating).
12
Data Sheet PU10542EJ03V0DS
HS350
NE55410GR
% The information in this document is current as of January, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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