WILLAS FM120-M+ 2SK3018WT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. N-channel MOSFET • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. z on-resistance High current capability, low forward voltage drop. • Low z • Fast switching speed High surge capability. Guardring for overvoltage protection. • z Low voltage drive makes this device ideal for portable equipment • Ultra high-speed switching. z • Easily designed drive circuits Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of • z Easy to parallel MIL-STD-19500 /228 z Pb-Free package iscode available product for packing suffix "G" • RoHS Halogen product free product packing code suffix "H" ”G” RoHS forforpacking code suffix Mechanical data Halogen free product for packing code suffix “H” • Epoxy : UL94-V0 rated flame retardant Marking: KN • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , MOSFET MAXIMUM RATINGS (Ta = per 25°C unless otherwise noted) • Terminals :Plated terminals, solderable MIL-STD-750 Method 2026 Parameter Value Units : Indicated by cathode band VDS• Polarity Drain-Source voltage 30 V ±20 V 0.1 A Symbol • Mounting Position : Any Gate-Source Voltage VGSS • Weight : Approximated 0.011 gram Continuous Drain Current PD MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Power Dissipation 0.2 W RθJA Marking Code ℃ -55-150 ℃ MOSFET ELECTRICAL Maximum RMS Voltage 12 20 13 30 14 21 VRRM a=25℃ CHARACTERISTICS(T VRMS Parameter Maximum DC Blocking Voltage 0.040(1.0) 0.024(0.6) Equivalent circuit 0.031(0.8) Typ. 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 Min 60 Typ 80 Units 150 200 Volts VGS(th) CJ TJ Operating Temperature Range Storage Temperature Range Drain-Source On-Resistance TSTG RDS(on) VDS = 3V, ID =100µA -55 to +125 1.0 Amps V 30 40 120 0.8 VGS = 4V, ID =10mA Amps ±500 nA ℃/W 1.5 V 8 Ω 13 Ω - 65 to +175 PF ℃ ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Forward Transconductance gFS Maximum Forward Voltage at 1.0A DC VF Dynamic Characteristics* Maximum Average Reverse Current at @T A=25℃ Rated DC Capacitance Blocking Voltage Input µA -55 to +150 0.2 VGS =2.5V,ID =1mA CHARACTERISTICS Max 100 30 IDSS IFSM VDS =30V,VGS = 0V = 0V IGSS RΘJA VGS =±20V, VDS Typical Junction Capacitance (Note 1) Gate Threshold Voltage FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 14 40 Peak Forward Surge Current 8.3 ms single half sine-wave Gate –Source leakage current Typical Thermal Resistance (Note 2) 0.071(1.8) 0.056(1.4) 3. DRAIN IO Zero Gate Voltage Drain Current 2 2. SOURCE V(BR)DSS VGS = 0V, ID = 10µA superimposed on rated load (JEDEC method) 1 0.012(0.3) Typ. 1. GATE unless otherwise noted) Symbol Test20 Condition 30 VDC Off Characteristics Maximum Average Forward Rectified Current Drain-Source Breakdown Voltage 3 0.146(3.7) 0.130(3.3) FM160-MH SYMBOL FM120-MH FM130-MH RATINGS Thermal Resistance from Junction to Ambient 625 FM140-MH ℃ FM150-MH /W Maximum Recurrent Peak Reverse Voltage 150 SOT-323 Dimensions in inches and (millimeters) ID Ratings at 25℃ ambient temperature unless otherwise specified. Junction Temperature TJ Single phase half wave, 60Hz, resistive of inductive load. Storage Temperature ForTcapacitive load, derate current by 20% stg SOD-123H @T A=125℃Ciss VDS =3V, ID = 10mA 0.50 20 0.70 0.85 mS 0.9 0.5 IR 10 0.92 Volts mAmps 13 pF 9 pF Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω 80 ns 80 ns Output NOTES: Capacitance Coss VDS =5V,VGS =0V,f =1MHz 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse Transfer Capacitance 2- Thermal Resistance From Junction to Ambient Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time 2012-06 *These parameters have no way to verify. 2012-0 tf WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SK3018WT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers Transfer Characteristics SOD-123H better reverse leakage and thermal resistance. Output current Characteristics 0.20 profile surface mounted application in order to • Low 200 VGS=3.0V Ta=25℃ 4.0V optimize board space. Pulsed • Low power loss, high 3.5V efficiency. • High current capability, low forward voltage drop. 0.15 surge capability. • High • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. VGS=2.5V 0.10 parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 100 (mA) ID DRAIN CURRENT (A) ID VGS=2.0V • Epoxy : UL94-V0 rated flame retardant V =1.5V • Case : Molded plastic, SOD-123H 0.00 , 0 1 2 3 5 • Terminals :Plated terminals, solderable per4MIL-STD-750 0.071(1.8) 0.056(1.4) 10 3 1 0.040(1.0) V =3V 0.024(0.6)DS 0.3 Ta=25℃ GS DRAIN TO SOURCE VOLTAGE Method 2026 VDS 0.012(0.3) Typ. 30 DRAIN CURRENT 0.05 Mechanical data 0.146(3.7) 0.130(3.3) 0.1 Pulsed 0.031(0.8) Typ. 0 0.031(0.8) Typ. 1 2 3 GATE TO SOURCE VOLTAGE (V) • Polarity : Indicated by cathode band • Mounting Position : Any RDS(ON) —— ID • Weight : Approximated 0.011 gram 60 VGS Dimensions in inches and (millimeters) RDS(ON) —— VGS 15 Ta=25℃ Ta=25℃ Pulsed Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 12 20 13 30 Maximum RMS Voltage 20 VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current VGS= 2.5V Peak Forward Surge Current 8.3 ms single half sine-wave superimposed0 on rated load (JEDEC method) VGS= 4V 10 3 IO IFSM 30 Typical Thermal Resistance (Note 2) CURRENT ID (mA) RΘJA DRAIN Typical Junction Capacitance (Note 1) CJ Storage Temperature Range 200 100 IS —— VSD VGS=0V CHARACTERISTICS IS (mA) 528 35 40 50 0 0 16 18 80 10 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts ID60 =100mA ID=50mA 1.0 30 5 Amps Amps 10 40 VOLTAGE GATE TO SOURCE 120 -55 to +125 15 VGS 20 ℃/W (V) PF -55 to +150 ℃ - 65 to +175 VF Pulsed NOTES: 15 50 TSTG Maximum Average Reverse Current at @T A=25℃ 30 200 14 40 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT T =25℃ a Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage 100 TJ Operating Temperature Range ( Ω) VRRM ON-RESISTANCE Maximum Recurrent Peak Reverse Voltage ON-RESISTANCE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 1 10 RDS(ON) ( Ω) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 40 For capacitive load, derate current by 20% RDS(ON) 4 (V) 0.9 0.92 Volts 10 mAmp 10 SOURCE CURRENT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 3 1 0.3 0.1 0.2 2012-06 2012-0 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 VSD (V) 1.0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SK3018WT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-323 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .087(2.20) • Case : Molded plastic, SOD-123H .070(1.80) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 VDC 20 30 40 50 60 .056(1.40) Maximum DC Blocking Voltage .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 14 40 15 50 16 60 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 13 30 .010(0.25) 18 10 80 100 .003(0.08) 115 150 120 200 Volts 56 70 105 140 Volts 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ .016(0.40) .008(0.20) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. NOTES: IR 0.50 .043(1.10) .032(0.80) VF Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.92 0.5 Volts mAmps 10 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP.