WILLAS FM120-M+ SESOTA03C THRU FM1200-M+ Dual Transient Voltage Suppressors Array for ESD Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H General Description optimize board space. Features LowSESOTA03C power loss, high •The isefficiency. a dual monolithic voltage • High current capability, low forward voltage drop. suppressor designed to protect components which • High surge capability. are •connected data and transmission lines Guardring fortoovervoltage protection. Ultra high-speed switching. • against ESD. It clamps the voltage just above the • Silicon epitaxial planar chip, metal silicon junction. logic• level supply positive transients and to Lead-free partsfor meet environmental standards of a MIL-STD-19500 /228 diode drop below ground for negative transients. It • RoHS product for packing code suffix "G" can also work as bidirectional suppressor by Halogen free product for packing code suffix "H" z 0.146(3.7) 2 Unidirectional Transil functions 0.130(3.3) z Low leakage current: IR max< 20 μA at VRM z 150W peak pulse power(8/20μs) z Transient protection for data lines as per z Pb-Free package is available RoHS product for packing code suffix ”G” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix “H” Mechanical connecting only pin1 data and 2. 0.040(1.0) Complies with the following standards 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant IEC61000-4-2 • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. Applications , Level 4 15 kV (air discharge) • Terminals :Plated terminals, solderable per MIL-STD-750 z Computers Method 2026 8 kV(contact discharge) z Printers Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band MIL STD 883E - Method 3015-7 Class 3 z Communication systems • Mounting Position : Any 25 kV HBM (Human Body Model) • Weight : Approximated Functional diagram 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current SOT-23 IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Absolute Ratings (Tamb=25°C ) Typical Thermal Resistance (Note 2) Symbol PPP Peak Pulse Operating Temperature Range Storage Temperature Range T Maximum L Tstg RΘJA Parameter CJ Typical Junction Capacitance (Note 1) Power (tp = 8/20μs) TJ Storage Temperature CHARACTERISTICS Tj NOTES: VF Range IR Maximum junction temperature @T A=125℃ 2- Thermal Resistance From Junction to Ambient IEC61000-4-2 2012-06 A 40 Value Units 120 150 -55 to +150 W ℃ -55 to +125 - 65 to +175 260 °C 0.50 0.70 -40 to 0.5 10 0.85 +125 °C 0.9 0.92 U V 150 °C 15 kV m Electrostatic discharge VPPat 1 MHZ and applied IEC61000-4-2 discharge 1- Measured reverse voltageair of 4.0 VDC. 2012-09 A Range -55 to +155 FM180-MH FM1100-MH°C FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 lead temperatureTSTG for soldering during 10s Maximum Forward Voltage at 1.0A DC Top Operating Temperature 13 30 V 12 20 contact discharge 8 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESOTA03C THRU Dual Transient Voltage Suppressors Array for ESD Protection FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Electrical process design, excellent power dissipation offers • Batch Parameter better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Symbol optimize board space. Parameter loss, high efficiency. • Low power Maximum Reverse Peak Pulse I•PPHigh current capability, low forward voltage drop. Current • High surge capability. VC Clamping Voltage @ IPP • Guardring for overvoltage protection. • Ultra high-speed VRWM Working switching. Peak Reverse Voltage epitaxial planar chip, metal silicon junction. • Silicon Maximum Reverse Leakage Current I•RLead-free parts meet environmental standards of @ V RWM MIL-STD-19500 /228 for packing code suffix "G" Test Current •ITRoHS product 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" VBR Breakdown Voltage @ IT Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Electrical Characteristics , • Terminals :Plated terminals, solderable per MIL-STD-750 VBR Method 2026 • Polarity : Indicated by cathode band Part Numbers Min.: Any Typ. • Mounting Position 0.031(0.8) Typ. 0.031(0.8) Typ. C IT Dimensions in inchesIR and (millimeters) VRWM Typ. 0v Max. bias • Weight : Approximated 0.011 gram V V V mA V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SESOTA03C 5.2 5.6 6.0 5 3.3 Ratings at 25℃ ambient temperature unless otherwise specified. 1).8/20 waveform used.60Hz, (see resistive fig2.) of inductive load. Single phase half wave, For capacitive load, derate current by 20% RATINGS pF 1 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code µA Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Typical Characteristics Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 A A 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 Fig2. Pulse Waveform 2012-06 Fig3.Power Derating Curve WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESOTA03C THRU Dual Transient Voltage Suppressors Array for ESD Protection FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-23 current capability,data low forward voltage drop. • High mechanical • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .106(2.70) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM .080(2.04) RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. .070(1.78) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage .004(0.10)MAX. VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) .020(0.50) RΘJA .013(0.35) Am Am ℃ P -55 to +150 ℃ - 65 to +175 Dimensions in inches and (millimeters) CHARACTERISTICS ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Average Reverse Current at @T A=25℃ Marking -55 to +125 TSTG Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 40 120 TJ Operating Temperature Range Storage Temperature Range CJ Typical Junction Capacitance (Note 1) 1.0 30 .055(1.40) .035(0.89) 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. .086(2.20) .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G".122(3.10) Mechanical data 0.012(0.3) Typ. @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 Vo 10 mA NOTES: Type number 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient SESOTA03C 2012-06 2012-09 Marking code A3 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.