CR3KM-12 Thyristor Low Power Use REJ03G0386-0200 Rev.2.00 Mar.28.2005 Features • • • • • Insulated Type • Glass Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT (AV) : 3 A VDRM : 600 V IGT : 100 µA Viso : 2000 V Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 3 1 2 1 1. Cathode 2. Anode 3. Gate 3 Applications TV sets, control of household equipment such as electric blanket, and other general purpose control applications Maximum Ratings Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 VRRM VRSM VR (DC) VDRM Voltage class 12 600 720 480 600 DC off-state voltageNote1 VD (DC) 480 Parameter Rev.2.00, Mar.28.2005, page 1 of 7 Symbol Unit V V V V V CR3KM-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Symbol IT (RMS) IT (AV) Ratings 4.7 3.0 Unit A A ITSM 70 A I2 t 24.5 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Viso 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 2.0 2000 W W V V A °C °C g V Conditions Commercial frequency, sine half wave 180° conduction, Tc = 103°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, each terminal to case Notes: 1. With gate to cathode resistance RGK = 220 Ω. Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0 Unit mA Repetitive peak off-state current IDRM — — 2.0 mA On-state voltage VTM — — 1.6 V Gate trigger voltage VGT — — 0.8 V Gate non-trigger voltage VGD 0.1 — — V Test conditions Tj = 125°C, VRRM applied, RGK = 220 Ω Tj = 125°C, VDRM applied, RGK = 220 Ω Tc = 25°C, ITM = 10 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM RGK = 220 Ω Tj = 25°C, VD = 6 V, IT = 0.1 A Junction to caseNote2 Gate trigger current IGT 1 — 100Note3 µA Thermal resistance Rth (j-c) — — 4.1 °C/W Notes: 2. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 3. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item B C D E IGT (µA) 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 220 Ω resistance between the gate and cathode. Rev.2.00, Mar.28.2005, page 2 of 7 CR3KM-12 Performance Curves 102 7 Tc = 25°C 5 3 2 Rated Surge On-State Current 100 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 VFGM = 6V PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V IGT = 100µA (Tj = 25°C) IFGM = 0.3A × 100 (%) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 Typical Example IGT (25°C) # 1 45µA # 2 18µA #2 #1 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 1.0 0.9 Gate Trigger Voltage (V) 50 Gate Characteristics 10–1 VGD = 0.1V 7 5 5 710–1 2 3 5 710 0 2 3 5 710 1 2 3 5 710 2 2 3 Distribution 0.8 Typical Example 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) Rev.2.00, 60 Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 7 5 3 2 70 On-State Voltage (V) Mar.28.2005, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 101 7 5 3 2 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 102 7 5 3 2 90 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR3KM-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 8 160 7 140 Case Temperature (°C) Average Power Dissipation (W) Maximum Average Power Dissipation (Single-Phase Half Wave) 180° 6 120° 90° 5 θ = 30° 60° 4 3 θ 2 360° 1 0 1.0 2.0 3.0 4.0 90° 60° 180° 120° 40 0 1.0 3.0 2.0 4.0 5.0 Maximum Average Power Dissipation (Single-Phase Full Wave) 8 Resistive, inductive loads Natural convection Average Power Dissipation (W) Ambient Temperature (°C) θ = 30° 60 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) θ 360° 120 θ = 180° 120° 90° 60° 30° 100 80 60 40 20 0 7 180° 6 120° 90° 5 θ = 30° 4 60° 3 2 θ 1 360° 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 θ Resistive loads 5.0 3.0 4.0 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 θ Ambient Temperature (°C) Resistive loads 140 Case Temperature (°C) 80 Average On-State Current (A) 160 θ 360° 120 100 80 θ = 30° 60° 90° 120° 180° 60 40 20 0 1.0 2.0 3.0 4.0 Average On-State Current (A) Rev.2.00, 100 Average On-State Current (A) 140 0 120 0 5.0 160 0 θ 360° 20 Resistive, inductive loads 0 Resistive, inductive loads Mar.28.2005, page 4 of 7 5.0 Resistive loads Natural convection 140 θ θ 360° 120 θ = 180° 120° 90° 60° 30° 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) CR3KM-12 160 Holding Current (mA) Typical Example 140 RGK = 220Ω 120 100 80 60 40 20 Turn-Off Time (µs) Distribution 101 7 5 3 2 Typical Example 100 7 5 3 2 Holding Current vs. Gate to Cathode Resistance Turn-On Time vs. Gate Current Typical Example IGT(25°C) # 1 25µA # 2 50µA #1 300 250 #2 200 150 100 Turn-On Time (µs) Junction Temperature (°C) 350 50 101 7 5 4 3 2 VD = 100V Ta = 25°C Typical Example IGT(25°C) # 33µA # 100 7 5 4 3 2 10–1 0 10 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current (mA) Turn-Off Time vs. Junction Temperature Repetitive Peak Reverse Voltage vs. Junction Temperature 50 40 30 Typical Example 20 Distribution 10 20 40 60 80 100 120 140 160 Junction Temperature (°C) Mar.28.2005, page 5 of 7 × 100 (%) Gate to Cathode Resistance (kΩ) IT = 2A 70 VD = 50V, VR = 50V dv/dt = 5V/µs 60 0 VD = 12V RGK = 1kΩ Junction Temperature (°C) 400 0 102 7 5 3 2 10–1 –40 –20 0 20 40 60 80 100 120 140 160 0 –40 –20 0 20 40 60 80 100 120 140 160 80 Rev.2.00, Holding Current vs. Junction Temperature Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) CR3KM-12 Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 3 2 Typical Example tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Current Pulse Width (µs) Rev.2.00, Mar.28.2005, page 6 of 7 CR3KM-12 Package Dimensions JEITA Package Code − RENESAS Code Package Name MASS[Typ.] PRSS0003AB-A TO-220FN 2.0g Unit: mm 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Straight type Tube 50 Type name Lead form Tube 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.28.2005, page 7 of 7 Standard order code example CR3KM-12 CR3KM-12-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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