CR04AM-12 Thyristor Low Power Use REJ03G0354-0200 Rev.2.00 Mar.01.2005 Features • IT (AV) : 0.4 A • VDRM : 600 V • IGT : 100 µA • Glass Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.2.00, Mar.01.2005, page 1 of 7 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V CR04AM-12 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.63 0.4 Unit A A ITSM 10 A I2 t 0.4 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.23 W W V V A °C °C g Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180° conduction, Ta = 54°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. — — Typ. — — Max. 0.5 0.5 Unit mA mA On-state voltage VTM — — 1.2 V Ta = 25°C, ITM = 1.2 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Gate trigger current IGT 1 — 100Note2 µA Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Holding current IH — 1.5 3 mA Rth (j-a) — — 150 °C/W Tj = 25°C, VD = 12 V, RGK = 1 kΩ Junction to ambient Thermal resistance Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 kΩ Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.2.00, Mar.01.2005, page 2 of 7 CR04AM-12 Performance Curves 102 7 5 3 2 10 Surge On-State Current (A) Ta = 25°C 101 7 5 3 2 100 7 5 3 2 1 2 3 4 5 Gate Voltage (V) PGM = 0.5W 7 5 V GT = 0.8V 3 (Tj = 25°C) 2 100 7 5 3 2 PG(AV) = 0.1W IGT = 100µA (Tj = 25°C) IFGM = 0.3V VGD = 0.2V 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Gate Trigger Voltage (V) 4 Gate Current (mA) 1.0 Distribution 0.8 Typical Example 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) Rev.2.00, 5 Gate Trigger Current vs. Junction Temperature VFGM = 6V 7 5 3 2 6 Gate Characteristics 101 10–1 7 Conduction Time (Cycles at 60Hz) 102 7 5 3 2 8 On-State Voltage (V) × 100 (%) 0 9 0 100 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10–1 Rated Surge On-State Current Mar.01.2005, page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR04AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 0.7 0.6 0.5 0.4 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 120 Resistive, inductive loads Natural convection 100 80 60 θ = 30° 40 90° 180° 60° 120° 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 θ = 30° 90° 60° 120° 180° 0.7 0.6 0.5 0.4 0.3 0.2 θ θ 360° 0.1 Resistive loads 0 140 θ 120 θ 360° Resistive loads Natural convection 100 80 60 40 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 60° 90° 120° 0 180° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 90° 180° θ = 30° 60° 120° 270° DC 0.7 0.6 0.5 0.4 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Mar.01.2005, page 4 of 7 Ambient Temperature (°C) 0.8 Average Power Dissipation (W) θ 360° Average On-State Current (A) 0 Rev.2.00, 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.8 Average Power Dissipation (W) Ambient Temperature (°C) 160 60° 120° θ = 30° 90° 180° Ambient Temperature (°C) Average Power Dissipation (W) 0.8 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 40 20 0 θ = 30° 0 60° 120° 270° 90° 180° DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Typical Example 140 120 100 80 60 40 20 RGK = 1kΩ 0 –40 –20 0 20 40 60 80 100 120 140 160 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example 100 80 60 40 20 Tj = 125°C 0 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example Holding Current (mA) 140 Tj = 125°C RGK = 1kΩ 120 100 80 60 40 20 101 7 5 3 2 Distribution Typical Example IGT(25°C) = 35µA 100 7 5 3 2 10–1 7 5 3 2 RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Rise of Off-State Voltage (V/µs) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Holding Current vs. Gate Trigger Current 500 Typical Example IGT(25°C) IH(1kΩ) 0.9mA # 1 25µA 400 300 200 #1 100 4.0 Tj = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (kΩ) Rev.2.00, Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 160 Holding Current (mA) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature × 100 (%) CR04AM-12 Mar.01.2005, page 5 of 7 0 100 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current (µA) CR04AM-12 Turn-Off Time vs. Junction Temperature 102 7 Typical Example 5 3 2 VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C 101 7 5 3 2 100 7 5 3 2 40 VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ Turn-Off Time (µs) Turn-On Time (µs) Turn-On Time vs. Gate Current Distribution 20 15 10 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width × 100 (%) Gate Current (mA) 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Mar.01.2005, page 6 of 7 Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Typical Example 25 5 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Rev.2.00, 30 104 7 5 3 2 103 7 5 3 2 Typical Example IGT(DC) # 1 10µA # 2 65µA #1 #2 102 7 5 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) CR04AM-12 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003EA-A Package Name MASS[Typ.] TO-92 Unit: mm 0.23g φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name – Lead forming code Form A8 Taping 2000 Type name – TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 Standard order code example CR04AM-12 CR04AM-12-A6 CR04AM-12-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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