BCR5KM-12 Triac Medium Power Use REJ03G0315-0200 Rev.2.00 Nov.09.2004 Features • IT(RMS) : 5 A • VDRM : 600 V • IFGT·I, IRGT·I, IRGT·III : 15 mA (10 mA)Note3 • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Electric rice cooker, electric pot, and controller for other heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Nov.09.2004, page 1 of 6 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V BCR5KM-12 Parameter RMS on-state current Symbol IT(RMS) Ratings 5 Unit A Surge on-state current ITSM 50 A I2 t 10.4 A2s PGM PG(AV) VGM IGM Tj Tstg — Viso 3 0.3 10 2 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 103°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Thermal resistance I II III I II III Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth(j-c) Rth(j-a) — — — — — — 0.2 — — — — — — — — — — — 1.5 1.5 1.5 15Note3 15Note3 15Note3 — 3.8 50 V V V mA mA mA V °C/W °C/W Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Rev.2.00, Nov.09.2004, page 2 of 6 Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 7 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote4 Junction to ambient BCR5KM-12 Performance Curves 102 7 5 3 2 Rated Surge On-State Current 100 101 7 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics Tj = 25°C 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 40 30 20 10 0 100 3 VGT = 1.5V 2 IGM = 2A IGT = 15mA PG(AV) = 0.3W Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) PGM = 3W 2 3 4 5 7 101 2 3 4 5 7 102 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I IRGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Nov.09.2004, page 3 of 6 Transient Thermal Impedance (°C/W) Gate Voltage (V) VGM = 10V VGD = 0.2V 10 -1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rev.2.00, 50 Gate Trigger Current vs. Junction Temperature 7 5 3 2 60 Gate Characteristics (I, II and III) 101 7 5 70 Conduction Time 7 5 100 80 On-State Voltage (V) 102 3 2 90 102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 -1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time BCR5KM-12 Maximum On-State Power Dissipation 102 10 On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 7 8 All fins are black painted 140 aluminum and greased 120 × 120 × t2.3 120 100 × 100 × t2.3 60 × 60 × t2.3 100 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 1 2 3 4 5 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Nov.09.2004, page 4 of 6 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 5 RMS On-State Current (A) 160 Ambient Temperature (°C) 360° Conduction 7 Resistive, 6 inductive loads Conduction Time (Cycles at 60Hz) Curves apply regardless 140 of conduction angle Rev.2.00, 8 0 160 0 9 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR5KM-12 Holding Current vs. Junction Temperature Latching Current vs. Junction Temperature 103 7 5 Distribution 7 5 4 3 Typical Example 2 101 7 5 4 3 Latching Current (mA) Holding Current (mA) 102 7 5 3 2 101 7 5 3 T2+, G+ 2 Typical Example T2–, G– VD = 12V 100 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 120 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) IRGT III 7 5 4 3 Typical Example III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example Tj = 125°C 140 Junction Temperature (°C) Gate Trigger Characteristics Test Circuits 6Ω 6Ω A 6V IRGT I 102 7 5 4 3 6Ω 2 101 0 10 A 6V 2 3 4 5 7 101 2 3 4 5 7 102 Nov.09.2004, page 5 of 6 V V 330Ω Test Procedure II Test Procedure I IFGT I A 6V 330Ω V Gate Current Pulse Width (µs) Rev.2.00, T2+, G– Typical Example 102 2 2 Distribution 3 2 330Ω Test Procedure III BCR5KM-12 Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 6 of 6 Standard order code example BCR5KM-12RA BCR5KM-12RA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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