UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in PWM applications. TO-220 FEATURES 1 TO-220F1 1 TO-247 * RDS(ON) ≤ 0.24Ω @VGS = 10V * Fast Switching Speed * Avalanche Energy Specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen-Free 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T 18N40L-T47-T 18N40G-T47-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-247 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 4 QW-R502-389.E 18N40 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 400 V ±30 V Continuous 18 A Drain Current Pulsed 72 A Avalanche Current 18 A Single Pulsed 1000 mJ Avalanche Energy 30 mJ Repetitive Peak Diode Recovery dv/dt 10 V/ns TO-220 235 Power Dissipation TO-220F1 PD W 38.5 TO-247 360 Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt THERMAL DATA PARAMETER Junction to Case SYMBOL TO-220 TO-220F1 TO-247 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 0.53 3.3 0.35 UNIT °С/W 2 of 4 QW-R502-389.E 18N40 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=400V, VGS=0V Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=9A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=0.5VDSS, Gate Source Charge QGS ID=18A, RG=5Ω (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=0.5VDSS, ID=9A (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=IS ,VGS=0V Maximum Continuous Drain-Source IS VGS=0V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Repetitive Forward Current Reverse Recovery Time trr VGS=0V, dIF/dt=100A/µs, IS=18A, VR=100V (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Notes: 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 2.0 0.18 25 ±100 V µA nA 4.0 0.24 V Ω 2500 280 23 pF pF pF 50 15 18 21 22 62 22 nC nC nC ns ns ns ns 0.8 1.5 V 18 A 72 A 200 ns µC 3 of 4 QW-R502-389.E 18N40 Power MOSFET TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 10 10 Drain Current, ID (A) 12 Drain Current,ID (A) 12 8 6 4 2 8 6 4 2 0 0 0 0 400 600 200 800 1000 Source to Drain Voltage,VSD (mV) Drain Current vs. Gate Threshold Voltage 300 300 250 250 Drain Current,ID (µA) Drain Current,ID (µA) VGS=10V, ID=9.0A 200 150 100 50 2.0 1.5 1.0 0.5 Drain to Source Voltage, VDS (V) Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 0 0 2 3 1 4 Gate Threshold Voltage,VTH (V) 0 200 100 300 400 500 0 Drain-Source Breakdown Voltage,BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-389.E