UNISONIC TECHNOLOGIES CO., LTD BCX70 Preliminary NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ORDERING INFORMATION Ordering Number Package BCX70G-AE3-R Note: Pin Assignment: E: Emitter B: Base C: Collector SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-080.B BCX70 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Power Dissipation PC 350 mW Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 325 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL TEST CONDITIONS BVCEO IC=2.0mA, IB=0 45 BVEBO ICES IEBO IE=1.0µF, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2.0mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA, RS=2KΩ f=1KHz IC=10mA, IB1=1.0mA VBB=3.6V, IB2=1.0mA, R1=R2=5KΩ, RL=990Ω 5 hFE Collector-Emitter Saturation Voltage VCE (sat) Base-Emitter Saturation Voltage VBE (sat) Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance VBE (on) fT Cob Noise Figure NF Turn On Time tON Turn Off Time tOFF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX V 20 20 100 380 100 0.6 0.7 0.55 125 UNIT V nA nA 630 0.35 0.55 0.85 1.05 0.75 4.5 V V V V V MHz pF 6 dB 150 ns 800 ns 2 of 3 QW-R206-080.B BCX70 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-080.B