UNISONIC TECHNOLOGIES CO., LTD UF600 Power MOSFET A, 600V, N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF600 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage, etc. FEATURES * RDS(on)<1.2kΩ @VGS=0V, ID=3mA RDS(on)<1.8kΩ @VGS=10V, ID=16mA * High switching speed * high breakdown voltage ORDERING INFORMATION Ordering Number Note: UF600G-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-502-A20.B UF600 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 600 V VGSS ±20 V Continuous ID 0.185 A Drain Current Pulsed IDM 0.740 A Power Dissipation PD 0.50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=-5V VDS=480V VDS=540V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 600 VDS=3V, ID=8μA VGS=0V, ID=3mA VGS=10V, ID=16mA -2.7 0.05 0.05 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-5~5V, VDS=25V, f=1.0MHz Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=5mA, RG=25Ω, VGS=-5~5V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS ISD=3mA Drain-Source Diode Forward Voltage VSD ISD=16mA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.9 1.4 90 90 +90 -90 V nA nA nA nA -1.5 1.2 1.8 V KΩ kΩ 10 30 5 pF pF pF 1.29 0.1 0.47 30 55 80 265 nC nC nC ns ns ns ns 1.38 4.58 V V 2 of 4 QW-502-A20.B UF600 TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (µA) Power MOSFET Drain-Source On-State Resistance Characteristics 5 Drain-Source On-State Resistance Characteristics 20 VGS=0V, ID=3mA 3 2 1 Drain Current, ID (mA) Drain Current, ID (mA) VGS=10V, ID=16mA 4 16 12 8 4 0 0 0 0.5 1 1.5 2 2.5 3 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 5 10 15 20 25 30 Drain to Source Voltage, VDS (V) 3 of 4 QW-502-A20.B UF600 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-502-A20.B