UNISONIC TECHNOLOGIES CO., LTD UT3443

UNISONIC TECHNOLOGIES CO., LTD
UT3443
Power MOSFET
P-CHANNEL 2.5-V (G-S)
MOSFET

DESCRIPTION
The UTC UT3443 is a P-channel power MOSFET using UTC’s
advanced trench technology to provide customers with a minimum
on-state resistance and extremal low gate charge with a 12V gate
rating.

FEATURES
* VDS(V)= -20V
* ID=-4.5A
*RDS(ON) < 100mΩ @VGS = -2.5V,
RDS(ON) < 65mΩ @VGS = -4.5V

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT3443G-AG6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-26
1
D
Pin Assignment
2
3
4
5
D G S D
6
D
Packing
Tape Reel
S: Source
MARKING
6 5
4
CD3G
1
2
3
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-557.B
UT3443

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
RATINGS
UNIT
-20
V
±12
V
-4.5
A
TA=25°C
Continuous
ID
TJ =150°C (Note 2)
Drain Current
TA=70°C
-3.6
A
Pulsed
IDM
-20
A
Power Dissipation (Note 2)
TA=25°C
PD
1.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Voltage
Gate-Source Voltage

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Note: Surface Mounted on FR4 Board, t≤5 sec

SYMBOL
θJA
RATINGS
110
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
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TYP
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TC=70°C
VGS=+12V, VDS=0V
VGS=-12V, VDS=0V
VDS=VGS, ID=-250µA
VGS=-4.5V, ID=-4.5A
VGS=-2.7V, ID=-3.8A
VGS=-2.5V, ID=-3.7A
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V, ID=-4.5A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Gate Resistance
Rg
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-10V, ID≈-1.0A,
VGEN=-4.5V, RL=10Ω, RG=6Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1.7A, VGS=0V
(Note 1)
Body Diode Reverse Recovery Time
tRR
IF=-1.7A, di/dt=100A/µs
Notes: 1. Pulse test; pulse width ≤300μs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
MIN
MAX UNIT
-1
-5
+100
-100
-0.6
-1.4
0.050 0.065
0.070 0.090
0.080 0.100
7.3
2.0
1.9
nA
nA
V
Ω
Ω
Ω
15
32
50
45
15
50
60
100
80
nC
nC
nC
Ω
ns
ns
ns
ns
-0.8
-1.2
V
35
80
ns
3
15
µA
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QW-R502-557.B
UT3443
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-557.B