UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13005L-H-x-T92-B MJE13005G-H-x-T92-B MJE13005-L-H-x-T92-K MJE13005G-H-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Package TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E Packing Tape Box Bulk MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage (VBE=0) Collector-Base Voltage Emitter Base Voltage RATINGS UNIT 400 V 900 V 900 V 9 V Continuous 4 A Collector Current Peak (1) 8 A Continuous 2 A Base Current Peak (1) 4 A Continuous 6 A Emitter Current Peak (1) 12 A 0.8 W Power Dissipation at TA=25°С PD Derate above 25°С 6.4 mW/°С Operating and Storage Junction Temperature TJ , TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCEO(SUS) VCES VCBO VEBO IC ICM IB IBM IE IEM THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 150 45 UNIT °С/W °С/W 2 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (Note 1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with Base Reverse Biased ON CHARACTERISTICS (Note 1) SYMBOL MIN VCEO(SUS) IC=10mA , IB=0 VCBO=Rated Value, VBE(OFF)=1.5V ICBO VCBO=Rated Value, VBE(OFF)=1.5V, TC=100°С IEBO VEB=9V, IC=0 MAX UNIT 400 V 1 mA 5 1 mA See Fig. 11 RBSOA See Fig. 12 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE (SAT) IC=0.5A, VCE=5V IC=1A, VCE=5V IC=2A, VCE=5V IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=2A, IB=0.5A, Ta=100°С IC=1A, IB=0.2A IC=2A, IB=0.5A IC=2A, IB=0.5A, TC=100°С 15 10 8 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fT IC=500mA, VCE=10V, f=1MHz Output Capacitance COB VCB=10V, IE=0, f=0.1MHz SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time tD Rise Time tR VCC=125V, IC=2A, IB1=IB2=0.4A, tP=25μs, Duty Cycle≤1% Storage Time tS Fall Time tF Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Note: 2. Pulse Test: PW=300μs, Duty Cycle≤2% TYP IS/B hFE1 hFE2 hFE3 DC Current Gain TEST CONDITIONS 50 60 40 0.5 0.6 1 1 1.2 1.6 1.5 4 MHz pF 65 0.025 0.3 1.7 0.4 V V V V V V V 0.1 0.7 4 0.9 μs μs μs μs CLASSIFICATION OF hFE1 RANK RANGE A 15 ~ 20 B 20 ~ 25 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 25 ~ 30 D 30 ~ 40 E 40 ~ 50 3 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Resistive Switching Reverse Bias Safe Operating Area and Inductive Switching +5V Vcc 33 1N4933 MJE210 L Test Circuits 0.001μF 33 1N4933 5V Pw DUTY CYCLE≦10% tr, tf≦10ns 2N2222 1k 68 1N4933 IB 1k Rc 5.1k T.U.T. *SELECTED FOR≧1kV VCE 51 RB SCOPE D1 MJE200 47 100 1/2W Coil Data : VCC=20V FERROXCUBE core #6656 Full Bobbin ( ~ 16 Turns) #16 TUT -4.0V 2N2905 Note: PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 +125V Vclamp Ic RB 1k +5V 0.02μF 270 Circuit Values MR826* -VBE(off) GAP for 200μH/20 A LCOIL=200μH VCLAMP=300V VCC=125V RC=62Ω D1=1n5820 or Equiv. RB=22Ω OUTPUT WAVEFORMS Test Waveforms tF CLAMPED IC tF UNCLAMPED IC(PK) t1 Adjusted to Obtain Ic t t1 VCE tf VCE or VCLAMP TIME t2 t2 t t1= LCOIL(ICPK) VCC t2= LCOIL(ICPK) VCLAMP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Test Equipment Scope-Tektronics 475 or Equivalent 4 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR RESISTIVE SWITCHING PERFORMANCE Transient Thermal Resistance, r(t) (Normalized) Time, t (°С) Time, t (°С) Fig. 6 Forward Bias Power Derating 1 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC (°С) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 4 is based on TC = 25°С; TJ(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC≥25°С. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 4 may be found at any case temperature by using the appropriate curve on Fig. 6. TJ(PK) may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete RBSOA characteristics. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R221-024.a MJE13005-H NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R221-024.a