WCU4C60S Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage : 600V � R.M.S On-State Current ( IT(RMS)= 4 A ) � Low On-State Voltage (1.6V(Typ.) @ ITM) General Description Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings (T = 25°C unless otherwise specified) J Parameter Symbol VDRM Condition Repetitive Peak Off-State Voltage Ratings Units 600 V Average On-State Current(180° Ti =60 °C 1.35 Conduction Angle) Tamb=25 °C 0.9 R.M.S On-State Current(180° Ti =60 °C Conduction Angle) Tamb=25 °C IT(AV) A 4 IT(RMS) A 1.35 1/2 Cycle, 60Hz, Sine ITSM Surge On-State Current 33 A WaveNon-Repetitive I2t I2t for Fusing t =10ms 4.5 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ PGM Forward Peak Gate Power Dissipation 0.5 W 0.2 W 1.2A A Operating Junction Temperature -40~125 °C °C Storage Temperature -40~150 °C °C PG(AV) IFGM TJ TSTG Forward Average Gate Power Dissipation Tj=125 °C Forward Peak Gate Current Thermal Characteristics Parameter Symbol Value Units RθJc Thermal Resistance Junction to Case(DC) 15 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 100 ℃/W Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WCU4C60S Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions IDRM Repetitive Peak Off-State Current VTM Peak On-State Voltage (1) IGT Gate Trigger Current (2) VD=12V,RL=140 Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State dv/dt Units Min Typ Max - - 5 μA - - 1 mA - - 1.8 V 20 - 50 μA - - 0.8 V VAK=VDRM RGK=1KΩ ITM=8A, tp=380㎲ VGT Value VD=12V,RL=3.3KΩ, RGK=1 KΩ 0.1 V VD=67%VDRM, RGK=1 KΩ 15 - - V/㎲ Voltage IH Holding Current IT=50mA, RGK=1 KΩ - - 5 mA IL Latching Current IT=1mA, RGK=1 KΩ 6 - - mA Rd Dynamic resistance Tj=125°C - - 100 mΩ Note: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. RGK Current not Included in measurement 2/5 Steady, keep you advance WCU4C60S Fig.1 Fig.1Average and D.C.on-state currentversus Fig. 2Maximum average power dissipation ambient temperature (device mounted on versus average on-state current FR4 with recommended pad layout) Fig. 3Relative variation of gate trigger current Fig.3 and holding current versus junction temperature Fig. 4Surge peak on-state current versus Number of cycles. Fig.5 Fig.5Relative variation of dV/dt immunity versus gate-cathode resistance(typical values) Fig.6 Relative Variation of dV/dt immunity versus gate-cathode capacitance (typical values) 3/5 Steady, keep you advance WCU4C60S Fig.7 On-state Characteristics (maximum values) Fig.8 Thermal Resistance junction to ambient Versus copper surface under tab (Epoxy printed Circuit board FR4,copper thickness:35mm) 4/5 Steady, keep you advance WCU4C60S TO25 1 Package Dimension TO251 Unit: mm 5/5 Steady, keep you advance