WCU4C60S Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage : 600V � R.M.S On-State Current ( IT(RMS)= 4 A ) � Low On-State Voltage (1.6V(Typ.) @ I T M) General Description Sensitive gate triggering SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings (T = 25°C unless otherwise specified) J Parameter Symbol V DRM I T (AV) I T (RMS) Condition Repetitive Peak Off-State Voltage Ratings Units 600 V Average On-State Current(180° Ti =60 °C 1.35 Conduction Angle) Tamb=25 °C 0.9 R.M.S On-State Current(180° Ti =60 °C Conduction Angle) Tamb=25 °C A 4 A 1.35 1/2 Cycle, 60Hz, Sine I TSM I 2t Surge On-State Current WaveNon-Repetitive 33 A I2t for Fusing t =10ms 4.5 A2s di/dt Critical rate of rise of on-state current F=60Hz,Tj=125 °C 50 A/㎲ P GM Forward Peak Gate Power Dissipation 0.5 W 0.2 W 1.2A A Operating Junction Temperature -40~125 °C °C Storage Temperature -40~150 °C °C PG(AV) I FGM TJ TSTG Forward Average Gate Power Dissipation Tj=125 °C Forward Peak Gate Current Thermal Characteristics Symbol Parameter Value Units R θJc Thermal Resistance Junction to Case(DC) 15 ℃/W R θJA Thermal Resistance Junction to Ambient(DC) 100 ℃/W Rev.A Aug.2010 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. WCU4C60S Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions I DRM Repetitive Peak Off-State Current VT M Peak On-State Voltage (1) I GT Gate Trigger Current (2) ITM=8A, tp=380㎲ VD=12V ,R L=140 VGT Gate Trigger Voltage (2) VGD Non-Trigger Gate Voltage (1) Critical dv/dt Rate of Rise VAK=VDRM R GK=1KΩ Off-State Value Units Min Typ Max - - 5 μA - - 1 mA - - 1.8 V - - 200 μA - - 0.8 V VD=12V ,R L=3.3KΩ, R GK =1 KΩ 0.1 VD=67%VDRM , R GK =1 KΩ 15 - - V/㎲ Voltage V IH Holding Current I T=50mA, R GK =1 KΩ - - 5 mA IL Latching Current I T=1mA, R GK =1 KΩ 6 - - mA Rd Dynamic resistance Tj =125°C - - 100 mΩ Note: 1. Pulse Width = 1.0 ms , Duty cycle ≤ 1% 2. R GK Current not Included in measurement 2/5 Steady, keep you advance WCU4C60S Fig.1 Fig.1Average and D.C.on-state currentversus Fig. 2Maximum average power dissipation ambient temperature (device mounted on versus average on-state current FR4 with recommended pad layout) Fig.3 Fig.3Relative variation of gate trigger current and holding current versus junction temperature Fig.5 Fig.5Relative variation of dV/dt immunity versus gate-cathode resistance(typical values) Fig. 4 Surge peak on-state current versus Number of cycles. Fig.6 Relative Variation of dV/dt immunity versus gate-cathode capacitance (typical values) 3/5 Steady, keep you advance WCU4C60S Fig.7 On-state Characteristics (maximum values) Fig.8 Thermal Resistance junction to ambient Versus copper surface under tab (Epoxy printed Circuit board FR4,copper thickness:35mm) 4/5 Steady, keep you advance WCU4C60S 1 Package Dimension TO25 TO251 Unit: mm 5/5 Steady, keep you advance