R10 0- 8H MC MCR10 R100 ve Gate Sensiti itiv con Cont ed Rec tifi ers Sili Silic Contrroll olle ectifi tifie es Featur Feature ■ High repetitive peak off-state voltage VDRM/VRRM=800V ■ Sensitive gate trigger current: IGT=200uA max. ■ Low on-state voltage: VTM=1.4(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM/IPRM=100uA@TC=125℃ ■ Low holding current: IH=5mA maximum al De scription Gener Genera Des Sensitive triggering SCR is suitable for the application where gate current limited such as microcontrollers, logic integrated circuits, small motor control, gate driver for large SCR, sensing and detecting circuits. General purpose switching and phase control applications K G A TO-92 Absolute Maximum Ratings (Tj=25℃ unless otherwise specified) Symbol Parameter Note(1) Value Units 800 V VDRM/VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (180o conduction angles) TI=85℃ 0.8 A IT(AV) Average on-state current (80o conduction angles ) TI=85℃ 0.5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 9 tp = 10 ms 8 tp = 8.3 ms 0.43 A2s 0.1 W A I2t I²t Value for fusing PGM Peak gate power PG(AV) Average gate power dissipation TJ=25℃ 0.01 W IFGM Peak gate current TA=25℃ 1 A VRGM Peak gate voltage TA=25℃ 5 V TJ, Junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ e1 Not Note1 e1:: Although not recommended, off-state voltages up to 900 V may be applied without damage, but the thyristor may switch to the on-state.The rate of rise of current should not exceed 15 A/µs. Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal resistance, Junction-to-Case - - 75 ℃/W RQJA Thermal resistance, Junction-to-Ambient - - 200 ℃/W Rev. A1.1 Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T12-2 MCR 100 MCR100 100--8H Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified) Characteristics Symbol IDRM/IRRM Tc=25℃ off-state leakage current (VAK= VDRM/VRRM) Min Typ. Max - - 1 Unit μA Tc=125℃ 100 Forward “On” voltage (ITM = 1.2A tp = 380μs) VTM (Note2.1) Gate trigger current (continuous dc) IGT VGD 1.8 V 15 - 200 μA - - 0.8 V 0.2 - - V 500 800 - (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate threshold Voltage 1.4 (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate Trigger Voltage (Continuous dc) VGT - (Note2.1) Voltage Rate of Rise Off-State Voltage TJ=125℃ (VD=0.67VDRM ;exponential waveform) Gate open circuit dv/dt V/μs 25 IH Holding Current (VD = 12 V; IGT = 0.5 mA) - 2 5 mA IL latching current (VD = 12 V; IGT = 0.5 mA) - 2 6 mA Note 2.1 Pulse width≤1.0ms,duty cycle≤1% 2.2 RGK current is not included in measurement. 2/5 Steady, keep you advance MCR 100 MCR100 100--8H 3/5 Steady, keep you advance MCR 100 MCR100 100--8H 4/5 Steady, keep you advance MCR 100 MCR100 100--8H 92 Pac kage Dimension TOO-92 Pack c(mm Metri etric mm)) Min Typ Imperia periall(mil) Max Min Typ Max A 4.30 4.60 4.70 169 181 185 B 4.30 4.50 4.70 169 177 185 C 3.48 3.58 3.68 137 141 145 D 0.50 0.55 0.60 20 22 24 0 50 0 1.27 G H 14.40 14.60 14.70 567 575 579 J 1.85 1.90 1.75 73 75 69 L 0.45 0.50 0.55 18 20 22 2.54 N R 1.10 1.30 4.50 S Z 1.20 100 2.00 2.20 2.40 43 47 51 0 177 0 79 87 94 5/5 Steady, keep you advance