MCR100-6 Sensi sittive Gate on Controlled Rec Silic ilico Recttifiers Fea eattures ■ Sensitive gate trigger current: IGT =200uA maximum ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM /IPRM=100uA@TC=125℃ ■ Low holding current: IH=5mA maximum ri pti on General Desc escri rip tio Sensitive triggering SCR is suitable for the application where gate current limited such as microcontrollers, logic integrated circuits, small motor control, gate driver for large SCR, sensing and detecting circuits. General purpose switching and phase control applications um Ratin gs (Tj=25℃ unless otherwise specified) Absolute Maxim imu ing Symbol Parameter Value Units 400 V TI=85℃ 0.8 A TI=85℃ 0.5 A Repetitive peak off-state voltage VDRM/VRRM o RMS on-state current (180 conduction angles) IT(RMS) o IT(AV) Average on-state current (80 conduction angles ) ITSM Non repetitive surge peak on-state current I2t I²t Value for fusing PGM Peak gate power Note(1) tp = 8.3 ms 9 tp = 10 ms 8 tp = 8.3 ms 0.41 A2s 2 W TJ=125℃ 50 A/μs A Critical rate of rise of on-state current dI/dt ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs PG(AV) Average gate power dissipation TJ=125℃ 0.1 W IFGM Peak gate current TJ=125℃ 1 A VRGM Peak gate voltage TJ=125℃ 5 V TJ, Junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ te1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may No Note1: switch to the on-state.The rate of rise of current should not exceed 15 A/µs. al Ch arac stics Therm rmal Cha actteri ris Symbol Parameter Min Value Typ Max Units RQJC Thermal resistance, Junction-to-Case - - 60 ℃/W RQJA Thermal resistance, Junction-to-Ambient - - 150 ℃/W Rev. B1 Jun.2009 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 MCR100-6 tr arac sti cs (TJ = 25°C, RGK = 1 kΩ unless otherwise specified) Elec ectr triical Ch Cha actteri ris tics Characteristics Symbol IDRM/IRRM VTM IGT off-state leakage current Tc=25℃ (V AK= V Tc=125℃ /V RRM) DRM Forward “On” voltage (ITM = 1A tp = 380μs) (Note2.1) Gate trigger current (continuous dc) (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate Trigger Voltage (Continuous dc) VGT VGD Typ. Max - - 1 Unit μA 100 - 1.2 1.7 V 15 - 200 μA - - 0.8 V 0.2 - - V 500 800 - (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate threshold Voltage Min (Note2.1) Voltage Rate of Rise Off-State Voltage TJ=125℃ (VD=0.67VDRM ;exponential waveform) Gate open circuit dv/dt V/μs 25 IH Holding Current (VD = 12 V; IGT = 0.5 mA) - 2 5 mA IL latching current (VD = 12 V; IGT = 0.5 mA) - 2 6 mA Rd Dynamic resistance - - 245 mΩ TJ=125℃ Note 2.1 Pulse width≤1.0ms,duty cycle≤1% 2.2 RGK current is not included in measurement. 2/5 Steady, keep you advance MCR100-6 3/5 Steady, keep you advance MCR100-6 4/5 Steady, keep you advance MCR100-6 ge Dim ension TO-92 Packa ckag Dime Unit:mm 5/5 Steady, keep you advance