STN1A60 Logic Level ect ode Thyri st or B i-Dir ire ctiional Tri Trio rist sto F ea eattu res ■ Repetitive Peak off -State Voltage: 600V ■ R.M.S On-State Current(IT (RMS) =1A ■ Low on-state voltage: VT M =1.2(typ.)@ IT M ■ Low reverse and forward blocking current: IDR M =500uA@ TC=125℃ ■ Low holding current: I H=4mA (typ.) ■ High Commutation dV/dt. ri pti on Gen er al Desc escri rip tio General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. um Ratin gs (TJ =25℃ unless otherwise specified) A bsolute M axim imu ing Sy mbol Parame ametter Units 600 V 1 A 9.1/10 A 0.41 A2s W VDRM Peak Repetitive Forward Blocking Voltage(gate open) T (RMS) Forward Current RMS (All Conduction Angles, TL=50℃) I TSM Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) I 2t Circuit Fusing Considerations (tp= 10 ms) P GM Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) 5 P G( AV) Average Gate Power — Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ =125℃ I TM = 1.5A; I G = 200mA; dIG/dt = 200mA/µs 0.1 W 50 A/μs I FGM Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 0.5 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 6 V T J, Junction Temperature -40~125 ℃ T stg Storage Temperature -40~150 ℃ 2 g dI/dt (Note 1) Value mass te1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may No Note1: switch to the on-state. The rate of rise of current should not exceed 3A/us. Therm al Ch arac stics rmal Cha actteri ris Sy mbol Parame ametter Mi n Value p Ty Typ x Ma Max Units RQ JC Thermal Resistance, Junction-to-Case - - 60 ℃/W R QJA Thermal Resistance, Junction-to-Ambient - - 120 ℃/W Rev. B Nov.2008 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 STN1A60 tr arac sti cs (TJ = 25°C unless otherwise specified) Elec ectr triical Ch Cha actteri ris tics Characteristics Symbol IDRM VTM VD=V DRM,Single Phase, Half Wave TJ =125℃ Forward “On” Voltage (ITM = 1.5 A) Gate Trigger Current (Continuous dc) I GT Min (VD = 12 Vdc, RL = 33 Ω) Typ. Max Unit - - 0 .5 mA (Note2) - 1.2 1.5 V T2+G+ T2+GT2-GT2-G+ T2+G+ T2+GT2-GT2-G+ - 0.4 1.3 1.4 3.8 - 5 5 5 7 1.2 1.2 1.2 1.5 mA VGT Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33 Ω) VGD Gate threshold voltage(T J=125℃, VD=VDRM ,R L=3.3KΩ) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (V D=0.67VDRM ,gate open) 10 20 - V/μs IH Holding Current - 1.3 5 mA IL latching current (VD = 12 V; I GT = 100 mA) - 1.2 4.0 1.0 2.5 5 8 5 8 mA Rd Dynamic resistance - - 420 mΩ (VD =12 V, I GT = 100 mA) T2+G+ T2+GT2-GT2-G+ (T J=125℃) V Note 2. Forwar d current applied for 1 ms maximum duration, duty cycle 2/5 Steady, keep you advance STN1A60 Fig .1 . Fgigi 2.2 Fig .3 Fig Fig.. 5 Fig .4 Fig .6 3/5 Steady, keep you advance STN1A60 F ig .8 Fig . 10 F ig.11 Gate T rigg er Ch ar acteri cs T est Cir cu it Cha riss ti tics irc 4/5 Steady, keep you advance STN1A60 ge Dim ension TO- 92 Packa ckag Dime Unit Unit:: mm 5/5 Steady, keep you advance