WINSEMI WTN1A60

WTN1A60
Logic Level
ect
ode Thyri
st
or
Bi-Dir
ire
ctiional Tri
Trio
rist
sto
Fea
eattures
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=0.9A
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM=500uA@TC=125℃
■ Low holding current: IH=4mA (typ.)
■ High Commutation dV/dt.
ri
pti
on
General Desc
escri
rip
tio
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
um Ratin
gs (TJ=25℃ unless otherwise specified)
Absolute Maxim
imu
ing
Symbol
Parame
ametter
VDRM
Peak Repetitive Forward Blocking Voltage(gate open)
T(RMS)
Forward Current RMS (All Conduction Angles, TL=50℃)
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
2
(Note 1)
Value
Units
600
V
0.9
A
9.1/10
A
0.41
A2s
W
It
Circuit Fusing Considerations (tp= 10 ms)
PGM
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
5
PG(AV)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
TJ=125℃
ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/µs
0.1
W
50
A/μs
IFGM
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
0.5
A
VRGM
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
6
V
TJ,
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
2
g
dI/dt
mass
te1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
No
Note1:
switch to the on-state. The rate of rise of current should not exceed 3A/us.
al Ch
arac
stics
Therm
rmal
Cha
actteri
ris
Symbol
Parame
ametter
Min
Value
p
Ty
Typ
x
Ma
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
60
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
120
℃/W
Rev. A Jul 2011
Copyright @ WinSemi Co., Ltd., All rights reserved.
T01-3
WTN1A60
tr
arac
sti
cs (TJ = 25°C unless otherwise specified)
Elec
ectr
triical Ch
Cha
actteri
ris
tics
Characteristics
Symbol
IDRM
VTM
Typ.
Max
Unit
TJ=125℃
-
-
5
500
μA
(Note2)
-
1.2
1.5
V
T2+G+
T2+GT2-GT2-G+
T2+G+
T2+GT2-GT2-G+
-
0.4
1.3
1.4
3.8
-
5
5
5
7
1.2
1.2
1.2
1.5
TJ=25℃
(VD= VDRM/VRRM,gate open)
Forward “On” Voltage
(ITM = 1.5 A)
Gate Trigger Current (Continuous dc)
IGT
Min
Peak Forward or Reverse Blocking Current
(VD = 12 Vdc, RL = 33 Ω)
mA
VGT
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33 Ω)
VGD
Gate threshold voltage(TJ=125℃, VD=VDRM,RL=3.3KΩ)
0.2
-
-
V
dV/dt
Critical rate of rise of commutation Voltage (VD=0.67VDRM ,gate open)
10
20
-
V/μs
IH
Holding Current
-
1.3
5
mA
IL
latching current (VD = 12 V; IGT = 100 mA)
-
1.2
4.0
1.0
2.5
5
8
5
8
mA
Rd
Dynamic resistance
-
-
420
mΩ
(VD =12 V, IGT = 100 mA)
T2+G+
T2+GT2-GT2-G+
(TJ=125℃)
V
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, all for your advance
WTN1A60
Fig
Fig..1
Figg.22
Fig
Fig..3
Fig
Fig..5
Fig
Fig..4
Fig
Fig..6
3/5
Steady, all for your advance
F i g .8
Fig
Fig..10
aracteri
sti
cs Test Cir
cuit
Fig.11 Gate Trigger Ch
Cha
ris
tics
irc
4/5
Steady, all for your advance
WTN1A60
ge Dim
ension
TO-92 Packa
ckag
Dime
Unit
Unit::mm
5/5
Steady, all for your advance