WTN1A60 Logic Level ect ode Thyri st or Bi-Dir ire ctiional Tri Trio rist sto Fea eattures ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=0.9A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. ri pti on General Desc escri rip tio General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. um Ratin gs (TJ=25℃ unless otherwise specified) Absolute Maxim imu ing Symbol Parame ametter VDRM Peak Repetitive Forward Blocking Voltage(gate open) T(RMS) Forward Current RMS (All Conduction Angles, TL=50℃) ITSM Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz) 2 (Note 1) Value Units 600 V 0.9 A 9.1/10 A 0.41 A2s W It Circuit Fusing Considerations (tp= 10 ms) PGM Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) 5 PG(AV) Average Gate Power — Forward, (Over any 20ms period) Critical rate of rise of on-state current TJ=125℃ ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/µs 0.1 W 50 A/μs IFGM Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 0.5 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 6 V TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ 2 g dI/dt mass te1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may No Note1: switch to the on-state. The rate of rise of current should not exceed 3A/us. al Ch arac stics Therm rmal Cha actteri ris Symbol Parame ametter Min Value p Ty Typ x Ma Max Units RQJC Thermal Resistance, Junction-to-Case - - 60 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 120 ℃/W Rev. A Jul 2011 Copyright @ WinSemi Co., Ltd., All rights reserved. T01-3 WTN1A60 tr arac sti cs (TJ = 25°C unless otherwise specified) Elec ectr triical Ch Cha actteri ris tics Characteristics Symbol IDRM VTM Typ. Max Unit TJ=125℃ - - 5 500 μA (Note2) - 1.2 1.5 V T2+G+ T2+GT2-GT2-G+ T2+G+ T2+GT2-GT2-G+ - 0.4 1.3 1.4 3.8 - 5 5 5 7 1.2 1.2 1.2 1.5 TJ=25℃ (VD= VDRM/VRRM,gate open) Forward “On” Voltage (ITM = 1.5 A) Gate Trigger Current (Continuous dc) IGT Min Peak Forward or Reverse Blocking Current (VD = 12 Vdc, RL = 33 Ω) mA VGT Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33 Ω) VGD Gate threshold voltage(TJ=125℃, VD=VDRM,RL=3.3KΩ) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM ,gate open) 10 20 - V/μs IH Holding Current - 1.3 5 mA IL latching current (VD = 12 V; IGT = 100 mA) - 1.2 4.0 1.0 2.5 5 8 5 8 mA Rd Dynamic resistance - - 420 mΩ (VD =12 V, IGT = 100 mA) T2+G+ T2+GT2-GT2-G+ (TJ=125℃) V Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/5 Steady, all for your advance WTN1A60 Fig Fig..1 Figg.22 Fig Fig..3 Fig Fig..5 Fig Fig..4 Fig Fig..6 3/5 Steady, all for your advance F i g .8 Fig Fig..10 aracteri sti cs Test Cir cuit Fig.11 Gate Trigger Ch Cha ris tics irc 4/5 Steady, all for your advance WTN1A60 ge Dim ension TO-92 Packa ckag Dime Unit Unit::mm 5/5 Steady, all for your advance