WTPA24A60BW Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=24A ■ Low on-state voltage: VTM =1.55V(Max.)@ IT=11A ■ High Commutation dV/dt. General Description General purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. By using an internal ceramic pad, the WTPA series provides Voltage insulated tab (rated at 2500V RMS) Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter VDRM Peak Repetitive Forward Blocking Voltage(gate open) IT(RMS) Forward Current RMS (All Conduction Angles, Tc=58℃) ITSM (Note 1) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz) I 2t PG(AV) Units 600 V 24 A 250/260 A 340 A2s Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us) 5 W Circuit Fusing Considerations (t p= 10 ms) PGM Value Average Gate Power — Forward, (Over any 20ms period) 1 W IFGM Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS) 4 A VRGM Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS) 10 V TJ, Junction Temperature -40~125 ℃ Tstg Storage Temperature -40~150 ℃ Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate of rise of current should not exceed 3A/us. Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.7 ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 60 ℃/W Rev. B Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 WTPA24A60BW 8 Electrical Characteristics (Tc = 25°C unless otherwise specified) Symbol IDRM//IRRM Characteristics Peak Forward or Reverse Blocking Current (VDRM=VRRM, ) Min Typ. Max Unit Tc=25℃ - - 5 μA Tc=125℃ - - 3 mA - - 1.55 V T2+G+ - - 50 T2+G- - - 50 T2-G- - - 50 T2+G+ - - 1.2 T2+G- - - 1.2 T2-G- - - 1.2 VTM Forward “On” Voltage(Note2) (ITM = 35A Peak @ TA = 25°C) IGT Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 33Ω) VGT Gate Trigger Voltage (Continuous dc) (VD =12 Vdc, RL = 33Ω) mA V VGD Gate threshold voltage(Tj=125℃, VD= VDRM , RL = 3.3kΩ) 0.2 - - V dV/dt Critical rate of rise of commutation Voltage (VD=0.67VDRM ) 1000 - - V/μs 22 - - A/μs dIcom/dt Critical rate of rise On-State voltage(VD=400V,Tj=125℃) IH Holding Current (IT= 500 mA) - - 80 mA IL IG=1.2IGT - - 100 mA Rd Dynamic resistance - - 16 mΩ Note 2. Forward current applied for 1 ms maximum duration, duty cycle 2/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WTPA24A60BW 1 Fig. Fig.1 3 Fig. Fig.3 5 Fig. Fig.5 2 Fig. Fig.2 4 Fig. Fig.4 6 Fig. Fig.6 3/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WTPA24A60BW 8 7 Fig. Fig.7 Fig. 8 Fig.8 9 Fig. Fig.9 10 Gate Trigger Characteristics Test Circuit Fig. Fig.1 4/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. WTPA24A60BW 220 Package Dimension TOTO-220 Unit: mm 5/5 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.