WINSEMI WTPB12A60BW

2A60
BW
WTPB1
WTPB12
A60B
Sensitive Gate
Bi-Directional Triode Thyristor
es
Featur
Feature
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=12A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=17A
■ High Commutation dV/dt.
■Halogen free(WTPB12A60BW-HF)
al De
scription
Gener
Genera
Des
General purpose swithhing and phase control applications.
These devices are intended to be interfaced directly to
micro-controllers, logic integrated circuits and other low power
gate trigger circuits such as fan speed and temperature
modulation control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
Parameter
VDRM/VPRM
Peak Repetitive Forward Blocking Voltage(gate open)
IT(RMS)
Forward Current RMS (All Conduction Angles, TJ=58℃)
ITSM
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
I2t
Circuit Fusing Considerations (tp= 10 ms)
PGM
PG(AV)
Value
Units
600
V
(Note 1)
12
A
120/126
A
100
A2s
Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
5
W
1
W
50
A/μs
IFGM
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
TJ=125℃
ITM = 20A; IG = 200mA; dIG/dt = 200mA/μs
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
4
A
VRGM
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
10
V
TJ,
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
dI/dt
te1
No
Note1
te1:: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Char
acte
Chara
cterristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
1.4
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
60
℃/W
Rev. A
Apr.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T03-3
WTPB
12
A 60B W
WTPB12
12A
cteristics (TJ = 25°C unless otherwise specified)
Electrical Chara
Charac
Characteristics
Symbol
IDRM//IRRM
VTM
Min
Typ.
Max
Unit
Peak Forward or Reverse Blocking Current
TJ=25℃
-
-
5
μA
(VDRM=VRRM,)
T J=125℃
-
-
1
mA
(ITM = 17A tp=380μs)
-
-
1.55
V
T2+G+
-
-
50
T2+G-
-
-
50
T2-G-
-
-
50
T2+G+
-
-
1.2
T2+G-
-
-
1.2
T2-G-
-
-
1.2
Forward “On” Voltage
(Note2)
Gate Trigger Current (Continuous dc)
IGT
VGT
(VD = 12 Vdc, RL = 33 Ω)
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33 Ω)
mA
V
VGD
Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125℃,)
0.2
-
-
V
dV/dt
Critical rate of rise of commutation Voltage (VD=0.67VDRM)
40
-
-
V/μs
-
-
25
mA
T2+G+
-
-
40
T2+G-
-
-
70
T2-G-
-
-
40
-
-
35
IH
Holding Current (IT= 500 mA)
(Note 3)
Latching current
IL
Rd
(VD =12 Vdc,IGT=0.1A)
Dynamic resistance
mA
mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
Note 3. For both polarities of A2 to A1
2/6
Steady, keep you advance
2A60
BW
WTPB1
WTPB12
A60B
g.
1
Fi
Fig.
g.1
g.
3
Fi
Fig.
g.3
g.
5
Fi
Fig.
g.5
g.
2
Fi
Fig.
g.2
g.
4
Fi
Fig.
g.4
g.
6
Fi
Fig.
g.6
3/6
Steady, keep you advance
WTPB
12
A 60B W
WTPB12
12A
Fig
Fig..7
g.
8
Fi
Fig.
g.8
Fi
g.
9
Fig.
g.9
g.
10 Gate Trigg
er Ch
ara
cteristi
cs Test Cir
cuit
Fi
Fig.
g.10
gge
Cha
rac
tic
Circ
4/6
Steady, keep you advance
WTPB
12A60
BW
WTPB1
A60B
Marking layout
-
: Winsemi Semiconductor Logo
B : IGT
∆ : W:The third quadrant
Null : The fourth quadrant
□
Part No.
B∆
WWYY
WW : Weekly code(01-52)
YY : Last two digit of calendar year
(11:2011;12:2012)
□ : HF
Null
Halogen free
Halogen
5/6
Steady, keep you advance
WTPB
12A60
BW
WTPB1
A60B
TO-220 Package Dimension
Unit: mm
6/6
Steady, keep you advance