STF10A80 SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ 2.T2 Features ▼▲ ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ○ 1.T1 ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) 3.Gate ○ TO-220F General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. Absolute Maximum Ratings Symbol 1 2 3 ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 800 V 8.0 A 80/88 A I2 t 32 A2 s Peak Gate Power Dissipation 5.0 W Average Gate Power Dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C 2.0 g VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC = 89 °C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t PGM PG(AV) TJ TSTG A.C. 1 minute Mass JAN, 2007. Rev. 0 1/2 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. STF10A80 Electrical Characteristics Symbol Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ─ ─ 2.0 mA VTM Peak On-State Voltage IT = 15 A, Inst. Measurement ─ ─ 1.6 V ─ ─ 30 ─ ─ 30 I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ ─ ─ 30 V+GT1 Ⅰ ─ ─ 1.5 V-GT1 Ⅱ ─ ─ 1.5 V-GT3 Ⅲ ─ ─ 1.5 VGD (dv/dt)c IH Rth(j-c) 2/2 Items Gate Trigger Current Gate Trigger Voltage VD = 6 V, RL=10 Ω VD = 6 V, RL=10 Ω mA V Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ─ ─ V Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM 10 ─ ─ V/㎲ ─ 15 ─ mA ─ ─ 3.7 °C/W Holding Current Thermal Impedance Junction to case