ETC STF8A60

STF8A60
SemiWell Semiconductor
UL : E228720
Bi-Directional Triode Thyristor
Symbol
○
2.T2
Features
▼▲
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 8 A )
○
1.T1
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
3.Gate
○
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
Absolute Maximum Ratings
Symbol
1
2
3
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
8.0
A
80/88
A
I2 t
32
A2 s
Peak Gate Power Dissipation
5.0
W
Average Gate Power Dissipation
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
VISO
Isolation Breakdown Voltage(R.M.S.)
1500
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
2.0
g
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 89 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
PGM
PG(AV)
TJ
TSTG
A.C. 1 minute
Mass
Mar, 2003. Rev. 2
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
STF8A60
Electrical Characteristics
Symbol
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
2.0
mA
VTM
Peak On-State Voltage
IT = 12 A, Inst. Measurement
─
─
1.4
V
─
─
30
─
─
30
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/6
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -4.0 A/ms,
VD=2/3 VDRM
10
─
─
V/㎲
─
15
─
mA
─
─
3.7
°C/W
Holding Current
Thermal Impedance
Junction to case
STF8A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
10
VGM (10V)
1
On-State Current [A]
PGM (5W)
PG(AV) (0.5W)
25 ℃
IGM (2A)
Gate Voltage [V]
10
0
10
o
TJ = 125 C
1
10
o
TJ = 25 C
0
10
VGD (0.2V)
-1
10
1
2
10
0.5
3
10
10
1.0
1.5
10
θ
θ = 180
o
θ = 150
o
θ = 120
2π
θ
7
360°
6
θ : Conduction Angle
5
θ = 90
o
θ = 60
o
θ = 30
4
Allowable Case Temperature [ oC]
Power Dissipation [W]
π
o
3
2
1
0
1
2
3
4
5
6
110
θ = 30
7
RMS On-State Current [A]
8
9
θ
π
100
o
360°
θ : Conduction Angle
10
0
1
2
3
o
θ = 60
o
θ = 90
o
θ = 120
o
θ = 150 o
θ = 180
2π
θ
90
4
5
6
7
8
9
10
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
100
80
V
o
40
50Hz
V
o
60
VGT (25 C)
60Hz
VGT (t C)
Surge On-State Current [A]
3.5
120
80
0
3.0
130
o
8
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
9
2.0
On-State Voltage [V]
Gate Current [mA]
V
1
+
GT1
_
GT1
_
GT3
20
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/6
STF8A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
I
1
I
I
0.1
-50
0
50
+
GT1
_
GT1
_
GT3
100
1
0.1
-2
10
150
-1
0
10
o
1
10
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
●
4/6
▼▲
A
V
10Ω
RG
6V
●
▼▲
A
V
RG
6V
●
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
2
10
STF8A60
TO-220F Package Dimension
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
3.7
3.2
1.5
φ
φ 1
φ 2
0.146
0.126
0.059
A
E
F
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
I
H
B
φ
φ1
C
φ2
L
G
M
1
2
D
1. T1
2. T2
3. Gate
3
J
N
O
K
5/6
STF8A60
TO-220F Package Dimension, Forming
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
8.4
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Max.
10.6
6.44
9.81
8.66
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.331
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
5.0
3.7
3.2
1.5
φ
φ 1
φ 2
0.197
0.146
0.126
0.059
A
E
F
I
H
B
φ
φ1
C
φ2
L
G
M
1
D
2
3
N
O
J
P
K
6/6
Max.
0.417
0.254
0.386
0.341
0.242
0.054
0.135
0.084
0.111
1. T1
2. T2
3. Gate