WINSEMI STF8A80

STF8A80
Bi-Directional Triode Thyristor
Symbol
○
2.T2
Features
▼▲
◆ Repetitive Peak Off-State Voltage : 800V
◆ R.M.S On-State Current ( IT(RMS)= 8 A )
○
1.T1
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
3.Gate
○
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
Absolute Maximum Ratings
Symbol
VDRM
1
2
3
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Repetitive Peak Off-State Voltage
Ratings
Units
800
V
8.0
A
80/88
A
I2 t
32
A2 s
Peak Gate Power Dissipation
5.0
W
Average Gate Power Dissipation
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
VISO
Isolation Breakdown Voltage(R.M.S.)
1500
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
2.0
g
IT(RMS)
R.M.S On-State Current
TC = 89 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
PGM
PG(AV)
TJ
TSTG
A.C. 1 minute
Mass
Aug, 2008. Rev. A
1/5
copyright@Winsemi Semiconductor Co., Ltd., All rights reserved.
STF8A80
Electrical Characteristics
Ratings
Symbol
Conditions
Unit
Min.
Typ.
Max.
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
2.0
mA
VTM
Peak On-State Voltage
IT = 12 A, Inst. Measurement
─
─
1.4
V
─
─
30
─
─
30
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/5
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -4.0 A/ms,
VD=2/3 VDRM
10
─
─
V/㎲
─
15
─
mA
─
─
3.7
°C/W
Holding Current
Thermal Impedance
Junction to case
STF8A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
2
VGM (10V)
10
1
PGM (5W)
Gate Voltage
[V]
o
On-State
TJ = 125 C
Current
[A]
1
10
PG(AV) (0.5W)
25 ℃
10
IGM (2A)
0
o
TJ = 25 C
10
0
VGD (0.2V)
10
-1
10
1
10
2
10
0.5
3
1.0
1.5
10
π
2π
θ = 90
o
θ = 60
o
θ = 30
o
360°
6
3.5
Allowable Case
Temperature
[ oC]120
θ = 150
oθ = 120
o
θ
3.0
130
o
θ = 180
8
Power
θ
Dissipation
[W]
7
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
9
2.0
On-State Voltage [V]
Gate Current [mA]
θ : Conduction Angle
5
110
o
θ = 30
θ
π
100
4
θ = 90
oθ = 120
oθ = 150 o
o
θ
3
360°
θ = 180
90
2
o
θ = 60
2π
θ : Conduction Angle
1
80
0
0
1
2
3
4
5
6
7
RMS On-State Current [A]
8
9
10
0
1
2
3
4
5
6
7
8
9
10
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
100
80
Surge On-State
Current [A]
V
60Hz
V
VC)
GT (25 C)
VGT (t
o
60
o
+
GT1
_
V
1
GT1
_
GT3
50Hz
40
20
0.1
0
0
10
10
1
Time (cycles)
10
2
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
STF8A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
10
Transient
Thermal
oImpedance
[ C/W]
GT (25 C)
IGT (t IC)
o
o
I
1
I
I
+
GT1
_
1
GT1
_
GT3
0.1
0.1
-50
0
50
100
150
-2
10
10
-1
o
10
0
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
●
●
Test Procedure Ⅰ
4/5
▼▲
A
V
10Ω
RG
6V
●
▼▲
A
V
●
Test Procedure Ⅱ
RG
6V
●
A
V
●
Test Procedure Ⅲ
RG
1
10
2
STF8A80
TO-220F Package Dimension
Dim.
mm
Typ.
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Inch
Typ.
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
2.54
5.08
0.100
0.200
2.51
1.25
0.45
0.6
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.103
0.061
0.025
0.039
3.7
3.2
1.5
φ
φ1
φ2
0.146
0.126
0.059
A
E
F
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
I
H
B
φ
φ1
C
φ2
L
G
M
1
2
D
1. T1
2. T2
3. Gate
3
J
N
O
K
5/5