SEMIWELL BT139-600

BT139-600
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
2.T2
▼▲
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 16 A )
◆ High Commutation dv/dt
◆ Isolation Voltage ( VISO = 1500V AC )
◆
○
◆
1.T1
3.Gate
○
TO-220
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1
Absolute Maximum Ratings
Symbol
Parameter
Condition
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 100°C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2t for fusing
t =10ms
PGM
PG(AV)
3
( TJ = 25°C unless otherwise specified )
VDRM
I2 t
2
Peak Gate Power Dissipation
Average Gate Power Dissipation
Over any 20ms period
Ratings
Units
600
V
16
A
145/155
A
105
A2 s
5.0
W
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
2.0
g
TJ
TSTG
Mass
Jan, 2004. Rev. 0
1/5
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
BT139-600
Electrical Characteristics
Symbol
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
2.0
mA
VTM
Peak On-State Voltage
IT = 20 A, Inst. Measurement
─
─
1.6
V
─
─
25
─
─
25
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
25
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/5
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -6.0 A/ms,
VD=2/3 VDRM
10
─
─
V/㎲
─
20
─
mA
─
─
1.2
°C/W
Holding Current
Thermal Impedance
Junction to case
BT139-600
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
10
VGM (10V)
1
On-State Current [A]
PGM (5W)
PG(AV) (0.5W)
25 ℃
IGM (2A)
Gate Voltage [V]
10
0
10
o
TJ = 125 C
1
10
o
TJ = 25 C
0
10
VGD (0.2V)
-1
10
1
2
10
0.5
3
10
10
1.0
1.5
25
3.0
3.5
130
π
20
θ
Allowable Case Temperature [ oC]
Power Dissipation [W]
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
o
θ = 180
o
θ = 150
2π
θ
θ = 120
360°
15
θ : Conduction Angle
10
θ = 90
o
θ = 60
o
θ = 30
o
o
5
0
0
2
4
6
8
10
12
14
16
18
125
120
115
π
110
θ
2π
θ
θ = 30
o
θ = 60
o
θ = 90
o
o
105
θ = 120
o
θ = 150
o
θ = 180
360°
θ : Conduction Angle
100
95
20
0
4
8
RMS On-State Current [A]
12
16
20
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
200
150
o
50
0
0
10
o
VGT (t C)
60Hz
100
VGT (25 C)
Surge On-State Current [A]
2.0
On-State Voltage [V]
Gate Current [mA]
1
50Hz
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
BT139-600
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
1
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
I
1
I
+
GT1
_
GT1
I
_
GT3
0
10
-1
10
-2
0.1
-50
0
50
100
10
150
-3
10
-2
-1
10
o
0
10
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/5
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
1
10
BT139-600
TO-220 Package Dimension
Dim.
mm
Typ.
Min.
9.7
6.3
9.0
12.8
1.2
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.1
6.7
9.47
13.3
1.4
Inch
Typ.
Min.
0.382
0.248
0.354
0.504
0.047
1.7
2.5
0.067
0.098
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
φ
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
3.6
E
B
Max.
0.398
0.264
0.373
0.524
0.055
0.142
H
A
φ
I
F
C
M
L
G
1
D
2
1. T1
2. T2
3. Gate
3
J
N
O
K
5/5