2SB1672 Transistors Power Transistor (−80V, −7A) 2SB1672 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C). 4) Wide SOA (safe operating area). 5) Complements the 2SD2611. 10.0 4.5 2.8 8.0 5.0 14.0 15.0 12.0 φ 3.2 1.2 1.3 0.8 2.54 0.75 2.54 2.6 (1) (2) (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) (1) (2) (3) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits Unit VCBO VCEO −80 −80 −5 −7 V V V A(DC) −10 2 A(Pulse) VEBO Collector current IC Collector power dissipation PC Junction temperature Storage temperature * Single pulse, ROHM : TO-220FN Tj Tstg * W W(Tc=25°C) 30 150 −55 ∼ +150 °C °C Pw=100ms !Packaging specifications and hFE Type 2SB1672 Package hFE Code Basic ordering unit (pieces) TO-220FN EF − 500 !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCBO BVCEO −80 −80 − − − − V V IC = −50µA IC = −1mA Emitter-base breakdown voltage BVEBO −5 − − − − V µA µA IE = −50µA VCB = −80V − − −10 −10 − −1 V IC/IB = −4A/−0.4A − − −1.5 V − IC/IB = −4A/−0.4A VCE/IC = −5V/−1A 12 200 Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage ICBO IEBO VCE(sat) VBE(sat) hFE − 100 Transition frequency fT − Output capacitance Cob − Base-emitter saturation voltage DC current transfer ratio ∗ Measured using pulse current − 320 − − MHz pF Conditions VEB = −4V VCE = −5V , IE = 0.5A , f = 5MHz VCB = −10V , IE = 0A , f = 1MHz ∗ ∗