2SD2614 Transistors Medium Power Transistor (Motor, Relay drive) (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. !External dimensions (Units : mm) 4.5 10.0 1.2 1.3 0.8 2.54 !Absolute maximum ratings (Ta = 25°C) 2.8 8.0 5.0 14.0 15.0 12.0 φ 3.2 2.54 0.75 (1) (2) (3) (1) (2) (3) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits Unit VCBO VCEO 60±10 60±10 V V V A (DC) 6 5 VEBO ROHM : TO-220FN Collector current IC Collector power dissipation PC 2 25 W (Tc = 25°C) Tj Tstg 150 −55~+150 °C °C Junction temperature Storage temperature * Single pulse 10 * A (Pulse) W Pw = 10ms !Packaging specifications and hFE Type 2SD2614 Package TO-220FN 2k~30k 500 hFE Code Basic ordering unit (pieces) !Circuit diagram C B R1 E : Emitter B : Base C : Collector R2 E R1 3.5kΩ R2 300Ω !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance BVCBO BVCEO 50 50 - 70 70 V V ICBO - hFE 2000 - 10 3 1.5 30000 µA mA V - VEB = 5V IC/IB = 2A/2mA VCE/IC = 3V/2A Cob - 75 - pF VCB = 10V , IE = 0A , f = 1MHz * Measured using pulse current. IEBO VCE(sat) Conditions IC = 50µA IC = 5mA VCB = 40V * * 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)