FMBT2907 / FMBT2907A

Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Electrical Characteristics................................................................. 3~4
Rating and characteristic curves........................................................ 5~6
Pinning information........................................................................... 7
Marking........................................................................................... 7
Suggested solder pad layout............................................................. 7
Packing information.......................................................................... 8
Reel packing.................................................................................... 9
Suggested thermal profiles for soldering processes............................. 9
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 1
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
600mA General Purpose PNP Epitaxial
Planar Transistor
Package outline
SOT-23
.084(2.10)
.068(1.70)
(B)
(C)
(A)
0.063 (1.60)
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
Mechanical data
0.051 (1.30)
0.003 (0.09)
0.083 (2.10)
0.007 (0.18)
•
0.110 (2.80)
•
•
FMBT2222A is recommended.
Capable of 225mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H.
0.120 (3.04)
purpose and amplifier applications.
• As complementary type, the NPN transistor FMBT2222/
0.012 (0.30)
(BV CEO = -60V@I C=-10mA)
• PNP silicon epitaxial planar transistor, is designed for general
0.020 (0.50)
• High collector-emitterbreakdien voltage.
0.034 (0.85)
0.045 (1.15)
Features
0.035 (0.89)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
Symbol
FMBT2907
FMBT2907A
UNIT
Collector-Base voltage
CONDITIONS
V CEO
-40
-60
V
Collector-Emitter voltage
V CBO
-60
V
Emitter-Base voltage
V EBO
-5.0
V
IC
-600
mA
T = 25 C
Total device dissipation FR-5 board A
(1)
Derate above 25 OC
PD
225
mW
PD
1.8
mW/ OC
Thermal resistance
R θJA
556
PD
300
mW
Derate above 25 C
PD
2.4
mW/ OC
Junction to ambient
R θJA
417
Collector current
O
Junction to ambient
O
Total device dissipation alumina
substrate(2)
Thermal resistance
T A = 25 C
O
Operating temperature
Storage temperature
TJ
-55 ~ +150
T STG
-65 ~ +150
O
O
C/W
C/W
o
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 2
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
C
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
FMBT2907
FMBT2907A
uA
uA
FMBT2907
FMBT2907A
FMBT2907
FMBT2907A
FMBT2907A
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS
FMBT2907
FMBT2907A
FMBT2907
FMBT2907A
FMBT2907
FMBT2907A
FMBT2907
FMBT2907A
FMBT2907
FMBT2907A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 3
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
SMALL–SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 4
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
Switching time equivalent test circuits
Fig 1. Saturated Turn-On Switching Time
Fig 2.Saturated Turn-Off Switching Time
Typical Electrical Characteristics
FIG.4-Collect-Emitter Saturation Voltage vs Collect Current
FIG.3-Typical Pulsed Current Gain vs Collect Current
0.5
Collector-Emitter Voltage, VCEBAT(V)
Typical Pulse Current Gain, hfe
500
400
300
200
100
0
0.1
0.3
1.0
3.0
10
30
100
0.4
0.3
0.2
0.1
0
300
1
10
IC, Collector Current, (mA)
1.0
Base-Emitter On Voltage, VBEON(V)
1.0
Base-Emitter Voltage, VBEST(V)
500
FIG.6-Base-Emitter On Voltage vs Colltector Current
FIG.5-Base-Emitter Saturation Voltage vs Collector Current
1.2
0.8
0.6
0.4
0.2
0
100
IC, Collector Current, (mA)
1
10
100
0.8
0.6
0.4
0.2
500
Collector Current, IC (mA)
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0
0.1
1
10
2.5
Collector Current, IC (mA)
Document ID
Page 5
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
FIG.7-Collect Cutoff Current vs Ambient Temperature
FIG.8-Input & Output Capacitance vs Reverse Bias Voltage
20
16
10
Capacitance (pF)
Collector Current, ICBO (nA)
100
1
0.1
12
8
4
0.01
25
50
75
100
0
-0.1
125
-1
Amient Temperature, TA (°C)
-10
-50
Reverse Bias Voltage (V)
Typical Characteristics(Continued)
FIG.9-Switching Times vs Collector Current
FIG.10-Turn On and Turn Off Times vs Collector Current
250
500
400
Time, (ns)
Collect Current, ICBO (ns)
200
150
100
300
200
50
100
0
10
50
100
500
0
10
1000
50
Collector Current, IC (mA)
20
0.75
10
5
2
500
0.50
0.25
0
0
Collector Current, IC (mA)
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1000
FIG.12-Power Dissipation vs Ambient Temperature
1.00
Power Dissipation, PD(W)
Turn-On Base Current, IB1 (mA)
FIG. 11-Rise Time vs Collector & Turn On Base Current
100
500
Collector Current, IC (mA)
50
1
10
100
25
50
75
100
125
150
Temperature, TA (°C)
Document ID
Page 6
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
Pinning information
Pin
Simplified outline
Symbol
C
PinB
PinC
PinE
C
Base
Collector
Emitter
B
E
B
E
Marking
Type number
Marking code
FMBT2907
M2B
FMBT2907A
2F
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 7
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 8
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9
Formosa MS
PNP Epitaxial Planar Transistor
FMBT2907 / FMBT2907A
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
383*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 9
DS-231112
Issued Date
2008/02/10
Revised Date
Revision
Page.
2011/07/21
D
9