SMD PNP Transistor Formosa MS FMBT3906 List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Electrical characteristics................................................................... 3 Switching time equivalent test circuits................................................ 4 Rating and characteristic curves........................................................ 4~6 Pinning information........................................................................... 7 Marking........................................................................................... 7 Suggested solder pad layout............................................................. 7 Packing information.......................................................................... 8 Reel packing.................................................................................... 9 Suggested thermal profiles for soldering processes............................. 9 High reliability test capabilities.......................................................... 10 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 SMD PNP Transistor Formosa MS FMBT3906 200mA Silicon PNP Epitaxial Planar Transistor Features Package outline • High collector-emitterbreakdien voltage. (BV CEO -40V Min.@I C=-1.0mA) SOT-23 0.020 (0.50) (B) 0.012 (0.30) 0.045 (1.15) .084(2.10) .068(1.70) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.007 (0.18) 0.083 (2.10) 0.051 (1.30) 0.003 (0.09) • 0.120 (3.04) • • 0.110 (2.80) • stauration voltage, is designed for general purpose amflifier and switching applications at collector current. As complementary type, the NPN transistor FMBT3904 is recommended Capable of 225mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" dinicates Halogen-free part, ex.FMBT3906-H. 0.034 (0.85) • S mall load switch transistor with high gain and low 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -40 V Emitter-Base voltage V EBO -5.0 V IC -200 mA PD 225 mW 1.8 mW/ OC Collector current Total device dissipation FR-5 board (Note 1) O T A = 25 C O Derate above 25 C Thermal resistance(Note 1) Junction to ambient R θJA Thermal resistance(Note 1) Junction to case Total device dissipation alumina substrate(Note 2) T A = 25 C Thermal resistance(Note 2) Junction to ambient R θJA Junction to case R θJC Thermal resistance(Note 2) O 556 O C/W R θJC 300 O C/W PD 300 mW 2.4 mW/ OC O Derate above 25 C Operating junction temperature range TJ Storage temperature range T STG -55 -55 417 O C/W 225 O C/W +150 o C +150 o C Note 1: FR-5 = 1.0 X 0.75 X0.062 in. 2: Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 SMD PNP Transistor Formosa MS FMBT3906 Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Symbol MIN. Collector-Base breakdown voltage I C = -10uA, I E = 0 V (BR)CBO -40 V Collector-Emitter breakdown voltage(3) CONDITIONS TYP. MAX. UNIT I C = -1mA, I B = 0 V (BR)CEO -40 V Emitter-Base breakdown voltage I E = -10uA, I C = 0 V (BR)EBO -5.0 V Base cutoff current V CE = -30V, V EB = -3.0V I BL -50 nA Collector cutoff current V CE = -30V, V EB = -3.0V I CEX -50 nA On characteristics(3) PARAMETER CONDITIONS Symbol I c = -10mA, V CE = -1.0V Collector-Emitter saturation voltage(3) h FE 100 I c = -50mA, V CE = -1.0V 60 I c = -100mA, V CE = -1.0V 30 I c = -10mA, I B = -1.0mA TYP. 300 -0.25 V CE(sat) I c = -10mA, I B = -1.0mA - V -0.40 I c = -50mA, I B = -5.0mA Base-Emitter saturation voltage(3) MAX. UNIT 80 I c = -1.0mA, V CE = -1.0V DC current gain MIN. 60 I c = -0.1mA, V CE = -1.0V V BE(sat) -0.65 -0.85 V -0.95 I c = -50mA, I B = -5.0mA 3.Pulse test : pukse width < 300us, duty cycle < 2.0%. Small-signal characteristics PARAMETER CONDITIONS Current-gain-bandwidth product I C = -10mA, V CE = -20V, f = 100MHz Output capacitance V CB = -5.0V, I E = 0, f = 1.0MHz Input capacitance Symbol MIN. fT 250 TYP. MAX. UNIT MHz C obo 4.5 pF V EB = -0.5V, I C = 0, f = 1.0MHz C ibo 1.0 pF Input impedance V CE = -10V, I C = -1.0mA, f = 1.0KHz h ie 2.0 12 kohms Voltage feeback radio V CE = -10V, I C = -1.0mA, f = 1.0KHz h re 0.1 10.0 X 10 -4 Small-signal current gain V CE = -10V, I C = -1.0mA, f = 1.0KHz h fe 100 400 - Output admittance V CE = -10V, I C = -1.0mA, f = 1.0KHz h oe 3.0 60 μmhos Noise figure V CE = -5.0V, I C = -100uA, Rs = 1.0K ohms, f = 1.0KHZ NF 4.0 dB Switching characteristics PARAMETER CONDITIONS Delay time Rise time V CC = -3.0V, V BE = 0.5V, I C = -10mA, I B1 = -1.0mA Storage time Fall time V CC = -3.0V, I C =-10mA, I B1 = I B2 = -1.0mA Symbol MIN. TYP. MAX. UNIT td 35 tr 35 ts 225 tf 75 ns 5. Pulse Test: Pulse Width <=300μs, Duty cycle <= 2.0% http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 Switching time equivalent test circuits + 0 . 5V http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 4 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 NF, NOISE FIGURE ( dB ) NF, NOISE FIGURE ( dB ) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 5 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 6 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 SMD PNP Transistor Formosa MS FMBT3906 Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code FMBT3906 2A Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 SMD PNP Transistor Formosa MS FMBT3906 Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 8 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 SMD PNP Transistor Formosa MS FMBT3906 Reel packing PACKAGE SOT-23 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) CARTON (pcs) 382*262*387 APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Document ID Page 9 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10 SMD PNP Transistor Formosa MS FMBT3906 High reliability test capabilities Item Test Conditions 1. Steady State Operating Life P D=225mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj = 150℃, V CE= 80 % related volage , 1000hrs 3. Temperature Cycle 4. Autoclave - 55℃( 15min ) to 150℃( 15min ) Air to Air Transition Time < 20sec Test Cycles : 1000cycle P = 2atm Ta = 121℃ RH = 100 % Test Duration : 96hrs 5. High Temperature Storage Life Ta= 150℃ Test Duration : 1000hrs 6. Solderability 245℃, 5sec 7. High Temperature High Humidity Reverse Bias Ta = 85℃, 85 % RH , V CE= 80 % related volage , 1000hrs 8. Resistance to Soldering Heat http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 260℃, 10sec Document ID Page 10 DS-231113 Issued Date Revised Date Revision Page. 2008/02/10 2012/01/11 F 10