Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Marking........................................................................................... 6 Suggested solder pad layout............................................................. 6 Packing information.......................................................................... 7 Reel packing.................................................................................... 8 Suggested thermal profiles for soldering processes............................. 8 High reliability test capabilities.......................................................... 9 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C General Purpose Transistors NPN Silicon Features Package outline (B) (C) (A) 0.063 (1.60) Mechanical data 0.012 (0.30) 0.034 (0.85) 0.020 (0.50) .084(2.10) .068(1.70) 0.110 (2.80) 0.045 (1.15) SOT-23 0.120 (3.04) • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V • Epitaxial plana chip construction • Ideal for medium power application and switching • As complementary type, the PNP transistor BC856A is recommended. • Capable of 225mW power dissipation. • Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free part, ex.BC846A-H. 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.051 (1.30) 0.003 (0.09) 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A Rating Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Rating Symbol Value UNIT BC846 BC847, BC850 BC848, BC849 V CBO 80 50 30 Vdc BC846 BC847, BC850 BC848, BC849 V CEO 65 45 30 Vdc BC846 BC847, BC850 BC848, BC849 V EBO 6.0 6.0 5.0 Vdc IC 100 mAdc TYP. MAX. UNIT Collector current-Continuous Thermal Characteristics PARAMETER Total device dissipation FR-5 board (1) Symbol T A = 25 OC MIN. PD Derate above 25 OC Thermal resistance Junction to ambient O Total device dissipation Aluminum substrate(2) Thermal resistance T A = 25 C Storage temperature range 1.8 mW/ OC O 556 PD 300 mW 2.4 mW/ OC Derate above 25 C Operating junction temperature range mW R θJA O Junction to ambient 225 R θJA 417 O C/W C/W TJ -55 +150 o C T STG -55 +150 o C 1.FR-5 = 1.0 x 0.75 x0.062 in. 2. Aluminum=0.4 x 0.3 x 0.024 in., 99.5% aluminum http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER CONDITIONS Collector-Base breakdown voltage I c = 10uA Collector-Emitter breakdown voltage Symbol MIN. TYP. MAX. UNIT BC846A,B BC847A,B,C BC850B,C V (BR)CBO BC848A,B,C BC849B,C 80 50 30 V I c = 10mA BC846A,B BC847A,B,C BC850B,C V (BR)CEO BC848A,B,C BC849B,C 65 45 30 V Emitter-Base breakdown voltage I E = 1.0uA BC846A,B BC847A,B,C BC850B,C V (BR)EBO BC848A,B,C BC849B,C 6.0 6.0 5.0 V Collector-Emitter breakdown voltage I C = 10uA, V EB = 0 BC846A,B BC847A,B,C BC850B,C V (BR)CES BC848A,B,C BC849B,C 80 50 30 V Collector cutoff current V CB = 30V I CBO O V CB = 30V, T A = 150 C 15 nA 5.0 mA On characteristics PARAMETER CONDITIONS DC current gain( I c = 2.0mA, V CE = 5.0V ) BC846B, BC847B, BC848B BC849B, BC850B Collector-Emitter saturation voltage Symbol BC846A, BC847A, BC848A BC847C, BC848C, BC849C, BC850C I c = 10mA, I B = 0.5mA h FE MIN. TYP. MAX. UNIT 110 180 220 200 290 450 420 520 V CE(sat) I c = 10mA, I B = 0.5mA 0.7 V BE(sat) I c = 100mA, I B = 5.0mA Base-Emitter on voltage V 0.6 I c = 100mA, I B = 5.0mA Base-Emitter saturation voltage 800 0.25 V 0.9 I c = 2.0mA, V CE = 5.0V V BE(on) 580 660 700 V 770 I c = 10mA, V CE = 5.0V Small-signal characteristics PARAMETER CONDITIONS Current-gain-bandwidth product I C = 10mA, V CE = 5.0V, f = 100MHz Output capacitance V CB = 10V, f = 1.0MHz Noise figure (I C = 0.2mA, V CE = 5.0V, R S = 2.0ΚΩ, f = 1.0KHz, BW = 200Hz) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Symbol MIN. fT 100 BC846A,B BC847A,B,C BC848A,B,C BC849B,C BC850B,C MAX. UNIT MHz 4.5 C obo 10 NF pF Vdc dB 4 Document ID Page 3 TYP. DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Rating and characteristic curves BC846 Series Fig. 2-"ON" VOLTAGE 1.0 O T A = 25 C V, VOLTAGE (V) hFE, DC CURRENT GAIN (NORAMALIZED) Fig.1- DC CURRENT GAIN V CE = 5V O T A = 25 C 2.0 1.0 0.8 V BE(sat) @ I C / I B = 10 0.6 V BE @ C CE = 5.0V 0.4 0.5 0.2 0.2 V CE(sat) @ I C / I B = 10 0.1 0.2 1.0 10 0 100 0.2 0.5 1.0 T A = 25 OC 20mA 100mA 50mA 200mA 1.2 0.8 0.4 I C = 10mA 0 0.02 0.05 0.1 0.2 1.0 10 20 IB, BASE CURRENT (mA) Fig. 5.-CAPACITANCE C, CAPACTIANCE (pF) 40 20 T A = 25 OC C ib 10 6.0 C ob 4.0 2.0 0.1 0.5 1.0 5.0 10 VR, REVERSE VOLTAGE (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 50 100 O q VB, TEMPERATURE COEFFICIENT (mV/ C) FIG.3- COLLECTOR SATURATION REGION 2.0 1.6 10 20 50 100 200 IC, COLLECT CURRENT (mA) Fig. 4-BASE-EMITTER TEMPERATURE COFFICIENT 100 fT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) V CE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 5.0 50 q VB for V BE -55 OC to 125 OC 10 5.0 0.2 0.5 1.0 -2.0 10 50 100 200 Fig. 6- CURRENT-GAIN-BANDEIDTH PRODUCT 500 V CE = 5.0V O T A = 25 C 200 100 50 20 1.0 10 100 IC, COLLECTOR CURRENT(mA) Document ID Page 4 5.0 IC, COLLECTOR CURRENT (mA) DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Rating and characteristic curves BC847/BC848/BC849/BC850 Series Fig. 8-"ON" VOLTAGE 1.0 O T A = 25 C V, VOLTAGE (V) hFE, DC CURRENT GAIN (NORAMALIZED) Fig.7- DC CURRENT GAIN 2.0 V CE = 10V O T A = 25 C 1.0 0.6 0.8 V BE(sat) @ I C / I B = 10 V BE @ C CE = 10V 0.6 0.4 0.4 0.2 V CE(sat) @ I C / I B = 10 0.2 0.2 0.5 1.0 10 100 0 200 0.1 0.5 1.6 I C = 200mA I C = 50mA 1.2 I C = 100mA 0.8 0.4 I C = 20mA I C = 10mA 0 0.02 0.1 1.0 10 20 IB, BASE CURRENT (mA) Fig. 11.-CAPACITANCE C, CAPACTIANCE (pF) 10 T A = 25 OC 5.0 C ib 3.0 C ob 2.0 1.0 0.4 1.0 10 VR, REVERSE VOLTAGE (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 40 O θ VB, TEMPERATURE COEFFICIENT (mV/ C) FIG.9- COLLECTOR SATURATION REGION 2.0 T A = 25 OC 5.0 10 20 50 100 IC, COLLECT CURRENT (mA) fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) V CE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 1.0 Fig. 10-BASE-EMITTER TEMPERATURE COFFICIENT 1.0 1.2 1.6 2.0 -55 OC to 125 OC 2.4 2.8 0.2 1.0 100 IC, COLLECTOR CURRENT (mA) Fig. 12- CURRENT-GAIN-BANDEIDTH PRODUCT 400 200 V CE = 10V O T A = 25 C 100 60 30 20 0.5 1.0 2.0 10 50 IC, COLLECTOR CURRENT(mA) Document ID Page 5 10 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C 1A 1B 1E 1F 1G 1J 1K 1L 2B 2C 2E 2G Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 6 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 55.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 12.0 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 383*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 11.6 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 8 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9 Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C High reliability test capabilities Item Test Conditions 1. Steady State Operating Life P D=225mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj= 150℃,V CE=80% related volage, 1000hrs 3. Temperature Cycle 4. Autoclave -55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle P=2atm Ta=121℃ RH=100% Test Duration:96hrs 5. High Temperature Storage Life Ta=150℃ Test Duration:1000hrs 6. Solderability 245℃,5sec 7. High Temperature High Humidity Reverse Bias Ta=85℃, 85%RH, V CE= 80% related volage,1000hrs 8. Resistance to Soldering Heat http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 260℃,10sec Document ID Page 9 DS-231154 Issued Date Revised Date Revision Page. 2009/08/10 2011/07/21 C 9