Formosa MS

Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
High reliability test capabilities.......................................................... 9
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 1
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
General Purpose Transistors
NPN Silicon
Features
Package outline
(B)
(C)
(A)
0.063 (1.60)
Mechanical data
0.012 (0.30)
0.034 (0.85)
0.020 (0.50)
.084(2.10)
.068(1.70)
0.110 (2.80)
0.045 (1.15)
SOT-23
0.120 (3.04)
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V
• Epitaxial plana chip construction
• Ideal for medium power application and switching
• As complementary type, the PNP transistor BC856A is
recommended.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.BC846A-H.
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
0.051 (1.30)
0.003 (0.09)
0.007 (0.18)
0.083 (2.10)
0.035 (0.89)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
Rating
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Rating
Symbol
Value
UNIT
BC846
BC847, BC850
BC848, BC849
V CBO
80
50
30
Vdc
BC846
BC847, BC850
BC848, BC849
V CEO
65
45
30
Vdc
BC846
BC847, BC850
BC848, BC849
V EBO
6.0
6.0
5.0
Vdc
IC
100
mAdc
TYP.
MAX. UNIT
Collector current-Continuous
Thermal Characteristics
PARAMETER
Total device dissipation FR-5 board
(1)
Symbol
T A = 25 OC
MIN.
PD
Derate above 25 OC
Thermal resistance
Junction to ambient
O
Total device dissipation Aluminum
substrate(2)
Thermal resistance
T A = 25 C
Storage temperature range
1.8
mW/ OC
O
556
PD
300
mW
2.4
mW/ OC
Derate above 25 C
Operating junction temperature range
mW
R θJA
O
Junction to ambient
225
R θJA
417
O
C/W
C/W
TJ
-55
+150
o
C
T STG
-55
+150
o
C
1.FR-5 = 1.0 x 0.75 x0.062 in.
2. Aluminum=0.4 x 0.3 x 0.024 in., 99.5% aluminum
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 2
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
Electrical characteristics (AT T =25 C unless otherwise noted)
o
A
Off characteristics
PARAMETER
CONDITIONS
Collector-Base breakdown voltage
I c = 10uA
Collector-Emitter breakdown voltage
Symbol
MIN.
TYP.
MAX. UNIT
BC846A,B
BC847A,B,C BC850B,C V (BR)CBO
BC848A,B,C BC849B,C
80
50
30
V
I c = 10mA
BC846A,B
BC847A,B,C BC850B,C V (BR)CEO
BC848A,B,C BC849B,C
65
45
30
V
Emitter-Base breakdown voltage
I E = 1.0uA
BC846A,B
BC847A,B,C BC850B,C V (BR)EBO
BC848A,B,C BC849B,C
6.0
6.0
5.0
V
Collector-Emitter breakdown voltage
I C = 10uA, V EB = 0
BC846A,B
BC847A,B,C BC850B,C V (BR)CES
BC848A,B,C BC849B,C
80
50
30
V
Collector cutoff current
V CB = 30V
I CBO
O
V CB = 30V, T A = 150 C
15
nA
5.0
mA
On characteristics
PARAMETER
CONDITIONS
DC current gain( I c = 2.0mA, V CE = 5.0V )
BC846B, BC847B, BC848B
BC849B, BC850B
Collector-Emitter saturation voltage
Symbol
BC846A, BC847A, BC848A
BC847C, BC848C, BC849C, BC850C
I c = 10mA, I B = 0.5mA
h FE
MIN.
TYP.
MAX. UNIT
110
180
220
200
290
450
420
520
V CE(sat)
I c = 10mA, I B = 0.5mA
0.7
V BE(sat)
I c = 100mA, I B = 5.0mA
Base-Emitter on voltage
V
0.6
I c = 100mA, I B = 5.0mA
Base-Emitter saturation voltage
800
0.25
V
0.9
I c = 2.0mA, V CE = 5.0V
V BE(on)
580
660
700
V
770
I c = 10mA, V CE = 5.0V
Small-signal characteristics
PARAMETER
CONDITIONS
Current-gain-bandwidth product
I C = 10mA, V CE = 5.0V, f = 100MHz
Output capacitance
V CB = 10V, f = 1.0MHz
Noise figure
(I C = 0.2mA, V CE = 5.0V, R S = 2.0ΚΩ,
f = 1.0KHz, BW = 200Hz)
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Symbol
MIN.
fT
100
BC846A,B
BC847A,B,C
BC848A,B,C
BC849B,C
BC850B,C
MAX. UNIT
MHz
4.5
C obo
10
NF
pF
Vdc
dB
4
Document ID
Page 3
TYP.
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Rating and characteristic curves
BC846 Series
Fig. 2-"ON" VOLTAGE
1.0
O
T A = 25 C
V, VOLTAGE (V)
hFE, DC CURRENT GAIN (NORAMALIZED)
Fig.1- DC CURRENT GAIN
V CE = 5V
O
T A = 25 C
2.0
1.0
0.8
V BE(sat) @ I C / I B = 10
0.6
V BE @ C CE = 5.0V
0.4
0.5
0.2
0.2
V CE(sat) @ I C / I B = 10
0.1 0.2
1.0
10
0
100
0.2
0.5
1.0
T A = 25 OC
20mA
100mA
50mA
200mA
1.2
0.8
0.4
I C = 10mA
0
0.02
0.05
0.1
0.2
1.0
10
20
IB, BASE CURRENT (mA)
Fig. 5.-CAPACITANCE
C, CAPACTIANCE (pF)
40
20
T A = 25 OC
C ib
10
6.0
C ob
4.0
2.0
0.1
0.5
1.0
5.0
10
VR, REVERSE VOLTAGE (V)
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50
100
O
q VB, TEMPERATURE COEFFICIENT (mV/ C)
FIG.3- COLLECTOR SATURATION REGION
2.0
1.6
10
20
50
100
200
IC, COLLECT CURRENT (mA)
Fig. 4-BASE-EMITTER TEMPERATURE COFFICIENT
100
fT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)
V CE, COLLECTOR-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
5.0
50
q VB for V BE
-55 OC to 125 OC
10
5.0
0.2
0.5
1.0
-2.0
10
50
100
200
Fig. 6- CURRENT-GAIN-BANDEIDTH PRODUCT
500
V CE = 5.0V
O
T A = 25 C
200
100
50
20
1.0
10
100
IC, COLLECTOR CURRENT(mA)
Document ID
Page 4
5.0
IC, COLLECTOR CURRENT (mA)
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Rating and characteristic curves
BC847/BC848/BC849/BC850 Series
Fig. 8-"ON" VOLTAGE
1.0
O
T A = 25 C
V, VOLTAGE (V)
hFE, DC CURRENT GAIN (NORAMALIZED)
Fig.7- DC CURRENT GAIN
2.0
V CE = 10V
O
T A = 25 C
1.0
0.6
0.8
V BE(sat) @ I C / I B = 10
V BE @ C CE = 10V
0.6
0.4
0.4
0.2
V CE(sat) @ I C / I B = 10
0.2
0.2
0.5
1.0
10
100
0
200
0.1
0.5
1.6
I C = 200mA
I C = 50mA
1.2
I C = 100mA
0.8
0.4
I C = 20mA
I C = 10mA
0
0.02
0.1
1.0
10
20
IB, BASE CURRENT (mA)
Fig. 11.-CAPACITANCE
C, CAPACTIANCE (pF)
10
T A = 25 OC
5.0
C ib
3.0
C ob
2.0
1.0
0.4
1.0
10
VR, REVERSE VOLTAGE (V)
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40
O
θ VB, TEMPERATURE COEFFICIENT (mV/ C)
FIG.9- COLLECTOR SATURATION REGION
2.0
T A = 25 OC
5.0
10
20
50
100
IC, COLLECT CURRENT (mA)
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
V CE, COLLECTOR-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
1.0
Fig. 10-BASE-EMITTER TEMPERATURE COFFICIENT
1.0
1.2
1.6
2.0
-55 OC to 125 OC
2.4
2.8
0.2
1.0
100
IC, COLLECTOR CURRENT (mA)
Fig. 12- CURRENT-GAIN-BANDEIDTH PRODUCT
400
200
V CE = 10V
O
T A = 25 C
100
60
30
20
0.5
1.0
2.0
10
50
IC, COLLECTOR CURRENT(mA)
Document ID
Page 5
10
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
Pinning information
Pin
Simplified outline
Symbol
C
PinB
PinC
PinE
C
Base
Collector
Emitter
B
E
B
E
Marking
Type number
Marking code
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
BC849B
BC849C
BC850B
BC850C
1A
1B
1E
1F
1G
1J
1K
1L
2B
2C
2E
2G
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 6
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 7
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3,000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
383*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 8
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9
Formosa MS
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
High reliability test capabilities
Item Test
Conditions
1. Steady State Operating Life
P D=225mW Test Duration:1000hrs
2. High Temperature Reverse Bias
Tj= 150℃,V CE=80% related volage, 1000hrs
3. Temperature Cycle
4. Autoclave
-55℃( 15min) to 150℃( 15min)Air to Air Transition Time< 20sec Test Cycles:1000cycle
P=2atm Ta=121℃ RH=100% Test Duration:96hrs
5. High Temperature Storage Life
Ta=150℃ Test Duration:1000hrs
6. Solderability
245℃,5sec
7. High Temperature High Humidity Reverse
Bias
Ta=85℃, 85%RH, V CE= 80% related volage,1000hrs
8. Resistance to Soldering Heat
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260℃,10sec
Document ID
Page 9
DS-231154
Issued Date
Revised Date
Revision
Page.
2009/08/10
2011/07/21
C
9