SMD NPN Transistor Formosa MS FMBT2222AW List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2~3 Rating and characteristic curves........................................................ 4~6 Pinning information........................................................................... 7 Marking........................................................................................... 7 Suggested solder pad layout............................................................. 7 Packing information.......................................................................... 8 Reel packing.................................................................................... 9 Suggested thermal profiles for soldering processes............................. 9 High reliability test capabilities........................................................... 10 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW 600mA Silicon NPN Epitaxial Planar Transistor Package outline Features SOT-323 .056(1.40) .048(1.20) 0.072 (1.80) • 0.088 (2.20) • • stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 150mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.FMBT2222AW-H. 0.016 (0.40) 0.026 (0.65)Max (BV CEO = 40V@I C=10mA) • S mall load switch transistor with high gain and low (B) 0.012 (0.30) • High collector-emitterbreakdien voltage. (C) (A) 0.054 (1.35) 0.021 (0.53) 0.046 (1.15) 0.017 (0.42) 0.096 (2.40) 0.040 (1.00) 0.004 (0.10) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-323 • Terminals : Solder plated, solderable per 0.010 (0.25) 0.080 (2.00) Mechanical data 0.032 (0.80) MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.006 gram Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol Value UNIT Collector-Base voltage CONDITIONS V CBO 75 V Collector-Emitter voltage V CEO 40 V Emitter-Base voltage V EBO 6.0 V IC 600 mA PD 150 mW 1.8 mW/ OC Collector Current — Continuous O Total device dissipation FR-5 board (1) Thermal resistance(1) T A = 25 C O Derate above 25 C Junction to ambient O Total device dissipation alumina substrate(2) Thermal resistance(2) T A = 25 C 833 PD 300 mW 2.4 mW/ OC O Derate above 25 C Junction to ambient R θJA Operating junction temperature range Storage temperature range O R θJA O 417 C/W C/W TJ -55 to +150 o C T STG -55 to +150 o C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER CONDITIONS Symbol Min. Max. UNIT Collector-Base breakdown voltage I c = 10uA, I E = 0 V (BR)CBO 75 V Collector-Emitter breakdown voltage(3) I c = 10mA, I B = 0 V (BR)CEO 40 V Emitter-Base breakdown voltage I c = 10uA, I C = 0 V (BR)EBO 6.0 V Collector cutoff current V CE = 60Vdc, V EB(off) = 3.0Vdc I CEX 10 nA V CE = 60Vdc, V EB(off) = 3.0Vdc I BL 20 nA Max. UNIT Base cutoff current On characteristics(3) PARAMETER CONDITIONS Symbol 35 I c = 0.1mA, V CE = 10V 50 I c = 1.0mA, V CE = 10V DCcurrent gain I c = 10mA, V CE = 10V Collector-Emitter saturation voltage(3) Min. h FE 75 I c = 150mA, V CE = 10V (3) 100 I c = 500mA, V CE = 10V (3) 40 I c = 150mA, I B = 15mA 0.3 V CE(sat) I c = 150mA, I B = 15mA Vdc 1.0 I c = 500mA, I B = 50mA Base-Emitter saturation voltage(3) - V BE(sat) 0.6 1.2 Vdc 2.0 I c = 500mA, I B = 50mA 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. Small-signal characteristics PARAMETER CONDITIONS Current-gain-bandwidth product(4) I C = 20mA, V CE = 20V, f = 100MHz Symbol Min. fT 300 Max. UNIT MHz Output capacitance V CB = 10V, I E = 0, f = 1.0MHz C obo 8.0 pF Input capacitance V EB = 0.5V, I C = 0, f = 1.0MHz C ibo 30 pF Input impedance V CE = 10V, I C = 10mA, f = 1.0KHz h ie Voltage feeback radio V CE = 10V, I C = 10mA, f = 1.0KHz h re Small-signal current gain V CE = 10V, I C = 10mA, f = 1.0KHz h fe 75 375 - Output admittance V CE = 10V, I C = 10mA, f = 1.0KHz h oe 25 200 umhos Noise figure V CE = 10V, I C = 100uA, RS = 1.0K ohms, f = 1.0KHZ NF - Symbol Min. 0.25 1.25 kohms 4.0 X 10 -4 dB 4.0 4.f T is defined as the frequency at which h fe extrapolates to unity. Switching characteristics PARAMETER CONDITIONS Delay time V CC = 30V, V BE(off) = -0.5V, I C = 150mA, I B1 = 15mA Rise time Storage time Fall time V CC = 30V, I C =150mA, I B1 = I B2 = 15mA http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 UNIT Max. 10 td tr 25 ts 225 tf 60 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 ns Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW Switching time equivalent test circuits http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 Typical Pulsed Current Gain vs Collector Current 500 VCE=5V 400 125 C 300 200 25 C 100 -40 C 0 0.1 0.3 1 3 10 30 100 Ic-COLLECTOR CURRENT (mA) 300 VCESAT COLLECTOR-EMITTER VOLTAGE (V) hFE-TYPICAL PULSED CURRENT GAIN Rating and characteristic curves (FMBT2222AW) Collector- Emitter Saturation Voltage vs Collector Current 0.4 b=10 0.3 125 C 0.2 25 C 0.1 -40 C 1 25 C 0.6 125 C 0.4 10 100 500 VBE(ON)BASE-EMITTER ON VOLTAGE (V) VBESAT BASE-EMITTER VOLTAGE (V) -40 C 1 1 VCE=5V 0.8 -40 C 25 C 0.6 125 C 0.4 0.2 0.1 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) C0llector-Cutoff Current vs Ambient Temperature Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 20 VCB=40V 100 CAPACITANCE(pF) ICBO COLLECTOR CURRENT (nA) 500 Base-Emitter ON Voltage vs Collector Current b=10 0.8 100 Ic-COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current 1 10 10 1 0.1 f=1MHz 16 12 Cte 8 Cob 4 25 50 75 100 125 150 0.1 TA-AMBIENT TEMPERATURE ( C) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 1 10 100 REVERSE BIAS VOLTAGE (V) Page 5 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 Rating and characteristic curves (FMBT2222AW) Turn On and Turn Off Times vs Collector Current Switching Times vs Collector Current 400 400 320 V cc=25V 240 160 Vcc=25V 240 160 80 tON 10 0 100 1000 tf td 10 100 1000 Ic-COLLECTOR CURRENT(mA) Ic-COLLECTOR CURRENT(mA) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 ts tr tOFF 80 0 1c 10 I B1 =I B2 = TIME (nS) TIME (nS) 320 1 I B1=I B2= c 10 Page 6 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code FMBT2222AW P1 Suggested solder pad layout SOT-323 0.025(0.65) 0.025(0.65) 0.075(1.9) 0.035(0.90) 0.028(0.70) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-323 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.36 2.40 1.20 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 8 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW Reel packing PACKAGE SOT-323 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Page 9 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10 SMD NPN Transistor Formosa MS FMBT2222AW High reliability test capabilities Item Test Conditions 1. Steady State Operating Life P D=150mW Test Duration:1000hrs 2. High Temperature Reverse Bias Tj = 150℃, V CE= 80 % related volage , 1000hrs 3. Temperature Cycle 4. Autoclave - 55℃( 15min ) to 150℃( 15min ) Air to Air Transition Time < 20sec Test Cycles : 1000cycle P = 2atm Ta = 121℃ RH = 100 % Test Duration : 96hrs 5. High Temperature Storage Life Ta= 150℃ Test Duration : 1000hrs 6. Solderability 245℃, 5sec 7. High Temperature High Humidity Reverse Bias Ta = 85℃, 85 % RH , V CE= 80 % related volage , 1000hrs 8. Resistance to Soldering Heat 260℃, 10sec http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 10 Document ID Issued Date Revised Date DS-231133 2009/08/10 2010/03/10 Revision Page. B 10