Silicon Rectifier EGFM101-M THRU EGFM105-M Formosa MS List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities........................................................... 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7 Formosa MS Silicon Rectifier EGFM101-M THRU EGFM105-M 1.0A Sufrace Mount Efficient Fast Rectifiers-50-600V Package outline Features SOD-123 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to • • • • • • • 0.154(3.9) 0.138(3.5) optimize board space. Tiny plastic SMD package. Trr less than 25ns for high efficiency High current & surge capability. Low forward dropdown voltage Glass passivated chip junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen free parts, ex. EGFM101-M-H. 0.012(0.3) Typ. 0.075(1.9) 0.060(1.5) Mechanical data 0.067(1.7) 0.051(1.3) 0.028(0.7) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123 / MINI SMA • Terminals :Plated terminals, solderable per MIL-STD-750, 0.028(0.7) Typ. Dimensions in inches and (millimeters) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.018 gram Maximum ratings and Electrical Characteristics (AT PARAMETER T A=25 oC unless otherwise noted) CONDITIONS Forward rectified current See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T J = 25 OC Reverse current UNIT IO 1.0 A I FSM 25 A f=1MHz and applied 4V DC reverse voltage Storage temperature *1 V RRM (V) V RMS*2 (V) *3 VR (V) EGFM101-M 50 35 50 EGFM102-M 100 70 100 EGFM103-M 200 140 200 *4 VF (V) Operating temperature T J, ( OC) *5 t rr (ns) 25 400 280 400 1.25 EGFM105-M 600 420 600 1.75 5.0 μA pF 15 O +175 -65 C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 0.875 EGFM104-M TYP. 100 CJ T STG SYMBOLS MIN. IR V R = V RRM T J = 125 OC Diode junction capacitance MAX. Symbol -55 to +150 *4 Maximum forward voltage@I F=1.0A *5 Maximum Reverse recovery time, note 1 Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 2 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7 Rating and characteristic curves (EGFM101-M THRU EGFM105-M) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 1 EGFM104-M TJ=25°C 1.0 0.8 0.6 P.C.B. Mounted on 0.2" x 0.2" (5 mm x 5 mm) Copper Pad Areas 0.4 0.2 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE (°C) 0.1 EGFM105-M 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWAARD SURGE CURRENT,(A) pulse width =300μs 1% duty cycle FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 8.3ms Single Half TJ=25 C Sine Wave 20 JEDEC method 10 0 1 5 (+) 1W NONINDUCTIVE 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 35 TJ=25 C f=1.0MHZ Vsig = 50mVp-p trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) EGFM101-M - EGFM103-M 1.2 | | | | | | | | +0.5A 0 -0.25A -1.0A 30 25 20 15 10 5 1cm SET TIME BASE FOR 10 / 20ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7 Silicon Rectifier EGFM101-M THRU EGFM105-M Formosa MS Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code EGFM101-M EGFM102-M EGFM103-M EGFM104-M EGFM105-M E1 E2 E3 E4 E5 Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-123 0.075 (1.90) 0.055 (1.40) 0.075 (1.90) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 4 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7 Formosa MS Silicon Rectifier EGFM101-M THRU EGFM105-M Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOD-123 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.90 3.90 1.68 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 5 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7 Silicon Rectifier EGFM101-M THRU EGFM105-M Formosa MS Reel packing PACKAGE SOD-123 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) 2,500 4.0 BOX (pcs) 25,000 INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (m/m) (m/m) (m/m) (pcs) (kg) 183*183*123 178 382*262*387 9.5 200,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 6 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7 Silicon Rectifier EGFM101-M THRU EGFM105-M Formosa MS High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=150 OC for 168 hrs. MIL-STD-750D METHOD-1038 4. Forward Operation Life Rated average rectifier current at T A=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker JESD22-A102 15P SIG at T A=121 OC for 4 hrs. MIL-STD-750D METHOD-1051 7. Temperature Cycling -55 OC to +125 OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. 9. Forward Surge 8.3ms single half sine-wave superimposed on rated load, one surge. 10. Humidity at T A=85 OC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1021 11. High Temperature Storage Life at 175 OC for 1000 hrs. MIL-STD-750D METHOD-1031 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-4066-2 Document ID Page 7 MIL-STD-750D METHOD-1056 DS-121511 Issued Date 2008/02/10 Revised Date 2011/01/18 Revision E Page. 7