Formosa MS

Chip Schottky Barrier Rectifier
Formosa
MS
FM1020-T3 THRU FM10200-T3
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 1
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM1020-T3 THRU FM10200-T3
10.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Package outline
Features
SMC-T3
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
0.264(6.7)
0.248(6.3)
• Low profile surface mounted application in order to
•
•
•
•
•
•
•
•
0.020(0.5) Typ.
optimize board space.
Low power loss, high efficiency.
High current capability, l ow forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts, ex. FM1020-Τ3-H.
0.185(4.7)
0.170(4.3)
0.067(1.7)
0.059(1.5)
0.047(1.2) Typ.
0.047(1.2) Typ.
Mechanical data
0.120(3.05)
0.104(2.65)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AB / SMC-T3
• Terminals : Solder plated, solderable per
0.041(1.05)
0.026(0.65)
0.142(3.60)
0.126(3.20)
MIL-STD-750, Method 2026
0.063(1.6) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.1443gram
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
Symbol
MIN.
TYP.
O
Diode junction capacitance
V R = V RRM T J = 100 C
f=1MHz and applied 4V DC reverse voltage
Storage temperature
10.0
A
I FSM
150
A
*1
V RRM
(V)
V RMS*2
(V)
*3
VR
(V)
FM1020-T3
20
14
20
FM1030-T3
30
21
30
FM1040-T3
40
28
40
FM1045-T3
45
31.5
45
FM1050-T3
50
35
50
*4
VF
(V)
Operating
temperature
T J, ( OC)
0.55
-55 to +125
50
mA
700
CJ
-65
pF
+175
O
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.70
FM1060-T3
60
42
60
FM1080-T3
80
56
80
FM10100-T3
100
70
100
FM10150-T3
150
105
150
0.90
FM10200-T3
200
140
200
0.92
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FAX:886-2-22696141
0.5
IR
T STG
SYMBOLS
UNIT
IO
O
V R = V RRM T J = 25 C
Reverse current
MAX.
0.85
*4 Maximum forward voltage@I F=10.0A
-55 to +150
Document ID
Page 2
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7
Rating and characteristic curves (FM1020-T3 THRU FM10200-T3)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
0-T
3~F
M10
2
-T3
3
5-T
104
200
4
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
150
V-2
00V
105
M
3~F
0-T
102
6
INSTANTANEOUS FORWARD CURRENT,(A)
FM
8
20V
-45
V
50V
-60
V
80V
-10
0V
50
10
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
12
1.0
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
250
.01
200
.1
.3
.7
.9
1.1
1.3
1.5
150
8.3ms Single Half
TJ=25 C
Sine Wave
100
JEDEC method
50
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
0
1
5
50
10
100
100
20V~45V
50V~200V
NUMBER OF CYCLES AT 60Hz
10
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
2800
JUNCTION CAPACITANCE,(pF)
.5
FORWARD VOLTAGE,(V)
2400
2000
1600
1200
800
TJ=100°C
1.0
0.1
TJ=25°C
0.01
400
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Document ID
Page 3
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM1020-T3 THRU FM10200-T3
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
FM1020-T3
FM1030-T3
FM1040-T3
FM1045-T3
FM1050-T3
FM1060-T3
FM1080-T3
FM10100-T3
FM10150-T3
FM10200-T3
SS102
SS103
SS104
SS104
SS105
SS106
SS108
SS110
S1015
S1020
Suggested solder pad layout
SMC-T3
0.016(0.4)
0.112(2.85)
0.063(1.60)
0.142(3.60)
0.197(5.00)
0.063(1.60)
0.025(0.65)
0.175(4.45)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 4
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM1020-T3 THRU FM10200-T3
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SMC-T3
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
4.85
6.95
1.85
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
8.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 5
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM1020-T3 THRU FM10200-T3
Reel packing
PACKAGE
SMC-T3
REEL SIZE
13"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3,000
8.0
6,000
337*337*37
330
CARTON
SIZE
(m/m)
APPROX.
GROSS WEIGHT
(kg)
CARTON
(pcs)
350*330*360
17.2
48,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<3 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Document ID
Page 6
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7
Chip Schottky Barrier Rectifier
Formosa
MS
FM1020-T3 THRU FM10200-T3
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=125 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
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TEL:886-2-22696661
FAX:886-2-22696141
MIL-STD-750D
METHOD-1031
O
Document ID
Page 7
DS-121638
Issued Date
2013/04/25
Revised Date
-
Revision
A
Page.
7