Formosa MS SGFM101E-D2 THRU SGFM108E-D2 Chip Silicon Rectifier List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities........................................................... 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7 Formosa MS SGFM101E-D2 THRU SGFM108E-D2 Chip Silicon Rectifier 10.0A Surface Mount Super Fast Rectifiers-50-600V Package outline Features D2PAK • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to • • • • • • optimize board space.. High current capability. Super fast reovery time for switching mode application. High surge current capability. Glass passivated chip junction. Lead-free parts meet enironmental standards of MIL-STD-19500/228 Suffix "-H" indicates Halogen free parts, ex. SGFM101E-D2-H. 0.402(10.20) 0.386(9.80) 0.046(1.20) 0.032(0.80) 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) 0.370(9.40) 0.354(9.00) 0.012(0.30) 0.004(0.10) 0.192(4.8) 0.176(4.4) Mechanical data 0.108(2.70) 0.205(5.20) 0.189(4.80) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, TO-263 / D2PAK • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 PIN 1 PIN 3 PIN 2 T A=25 oC unless otherwise noted) PARAMETER O Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T J = 25 OC Reverse current UNIT IO 10.0 A I FSM 150 A f=1MHz and applied 4V DC reverse voltage Storage temperature V RMS*2 (V) *3 VR (V) SGFM101E-D2 50 35 50 SGFM102E-D2 100 70 100 SGFM104E-D2 200 140 200 *5 t rr (ns) *4 VF (V) Operating temperature T J, ( OC) 35 SGFM106E-D2 400 280 400 1.30 600 420 600 1.70 10 µA pF 80 O +175 -65 C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 0.975 SGFM108E-D2 TYP. 50 CJ T STG *1 V RRM (V) MIN. IR V R = V RRM T J = 125 OC Diode junction capacitance MAX. Symbol CONDITIONS Forward rectified current SYMBOLS 0.092(2.30) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 1.46 gram Maximum ratings (AT 0.024(0.60) 0.016(0.40) 0.063(1.60) 0.055(1.40) -55 to +150 *4 Maximum forward voltage@I F=10.0A *5 Reverse recovery time, note 1 Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7 Rating and characteristic curves (SGFM101E-D2 THRU SGFM108E-D2) PEAK FORWARD SURGE CURRENT,(A) AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 single phase half wave 60Hz resistive or inductive load 0 25 50 75 100 125 150 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 120 90 Sine Wave 60 JEDEC method 30 0 1 5 AMBIENT TEMPERATURE,( °C) 50 10 NUMBER OF CYCLES AT 60Hz FIG. 3 - TYPICAL INSTANTANEOUR FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, uAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES 8.3ms Single Half TJ=25 C FIG. 4 - TYPICAL INSTANTANEOUS REVERSE CHARACTERISTICS 100 100 TJ=25 OC SGFM101E-D2 ,SGFM102E-D2 SGFM104E-D2 10 SGFM106E-D2 1.0 0.1 SGFM108E-D2 pulse width=300us 1% duty cycle 0.01 T J =125°C 10 T J =100°C 1 T J =25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FIG. 5 - TYPICAL JUNCTION CAPACITANCE F IG . 6 - T EST C IRCUIT D IAGRAM AND R EVERSE R ECOVERY T IME C HARACTERISTIC JUNCTION CAPACITANCE,(pF) 140 120 50W NONINDUCTIVE 10W NONINDUCTIVE trr 100 | | | | | | | | +0.5A ( ) (+) 80 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 60 1W NONINDUCTIVE (+) 0 -0.25A OSCILLISCOPE (NOTE 1) 40 -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 20 1cm SET TIME BASE FOR 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7 Formosa MS SGFM101E-D2 THRU SGFM108E-D2 Chip Silicon Rectifier Pinning information Simplified outline Symbol 2 2 1 3 1 3 Marking Type number Marking code SGFM101E-D2 SGFM102E-D2 SGFM104E-D2 SGFM106E-D2 SGFM108E-D2 SF101E SF102E SF104E SF106E SF108E Suggested solder pad layout X1 Y1 L C Y2 PACKAGE D2PAK C 0.374(9.50) E 0.098(2.50) L 0.665(16.90) X1 0.425(10.80) X2 0.071(1.80) Y1 0.449(11.40) Y2 0.138(3.50) X2 Dimensions in inches and (millimeters) E http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7 Formosa MS SGFM101E-D2 THRU SGFM108E-D2 Chip Silicon Rectifier Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance D2PAK Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 10.70 16.30 5.10 1.50 330.00 50.00 13.00 1.75 11.50 16.00 4.00 2.00 0.23 24.00 30.00 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7 Formosa MS SGFM101E-D2 THRU SGFM108E-D2 Chip Silicon Rectifier Reel packing PACKAGE REEL SIZE D2PAK/TO-263 13" REEL (pcs) COMPONENT SPACING (m/m) 800 BOX (pcs) 16.0 800 INNER BOX (m/m) REEL DIA, (m/m) 337*337*37 330 CARTON SIZE (m/m) 350*330*360 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 6,400 15.0 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7 Formosa MS SGFM101E-D2 THRU SGFM108E-D2 Chip Silicon Rectifier High reliability test capabilities Item Test Conditions Reference 1. Solder Resistance o at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" 2. Solderability at 245±5 C for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T J=150 oC for 168 hrs. MIL-STD-750D METHOD-1026 4. Forward Operation Life Rated average rectifier current at T A=25 C for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min, on and off for 500 cycles. MIL-STD-750D METHOD-1036 6. Pressure Cooker 15P SIG at T A=121 oC for 4 hrs. JESD22-A102 7. Temperature Cycling -55 oC to +125 oC dwelled for 30 min. and transferred for 5min. total 10 cycles. MIL-STD-750D METHOD-1051 5. Intermittent Operation Life 8. Thermal Shock MIL-STD-750D METHOD-2031 o o MIL-STD-750D METHOD-1056 0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles. MIL-STD-750D METHOD-4066-2 9. Forward Surge 8.3ms single half sine-wave superimposed on rated load, one surge. 10. Humidity at T A=85 oC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1038 11. High Temperature Storage Life at 175 oC for 1000 hrs. MIL-STD-750D METHOD-1031 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date DS-121433 2009/02/10 2011/09/28 Revision Page. E 7