FM220 THRU FM2200 Formosa MS

Chip Schottky Barrier Rectifier
Formosa MS
FM220 THRU FM2200
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Chip Schottky Barrier Rectifier
Formosa MS
FM220 THRU FM2200
2.0A Surface Mount
Schottky Barrier Rectifiers-20V-200V
Package outline
Features
• Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
•
•
SMA
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, l ow forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. FM220-H.
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.068(1.7)
0.060(1.5)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA
• Terminals : Solder plated, solderable per
0.032(0.8) Typ.
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT
PARAMETER
o
T A=25 C unless otherwise noted)
Symbol
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
MIN.
TYP.
O
V R = V RRM T J = 100 C
Thermal resistance
Junction to ambient
Junction to case
Diode junction capacitance
2.0
A
I FSM
50
A
f=1MHz and applied 4V DC reverse voltage
V RMS*2
(V)
*3
VR
(V)
FM220
20
14
20
FM230
30
21
30
FM240
40
28
40
FM250
50
35
50
FM260
60
42
60
*4
VF
(V)
Operating
temperature
T J, ( OC)
0.50
-55 to +125
60
30
O
C/W
pF
160
CJ
-65
+175
O
C
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
0.70
FM280
80
56
80
FM2100
100
70
100
FM2150
150
105
150
0.90
FM2200
200
140
200
0.92
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mA
10
T STG
*1
V RRM
(V)
SYMBOLS
0.5
IR
R θJA
R θJC
Storage temperature
UNIT
IO
O
V R = V RRM T J = 25 C
Reverse current
MAX.
0.85
*4 Maximum forward voltage@I F=2.0A
-55 to +150
Page 2
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Rating and characteristic curves (FM220 THRU FM2200)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
2.0
FM
1.2
INSTANTANEOUS FORWARD CURRENT,(A)
1.6
0
00
24
0.8
22
FM
FM
0~
0~
22
25
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
2.4
0.4
0
0
20
40
60
80
100
120
140
160
180
200
LEAD TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
20V ~ 40V
10
50V ~ 60V
80V ~ 100V
3.0
150V~200V
1.0
0.1
TJ=25 C
Pulse Width 300us
1% Duty Cycle
PEAK FORWARD SURGE CURRENT,(A)
50
.01
40
.1
.3
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
30
8.3ms Single Half
TJ=25 C
Sine Wave
20
JEDEC method
10
FIG.5 - TYPICAL REVERSE
0
1
5
50
10
CHARACTERISTICS
100
100
20V~40V
50V~200V
NUMBER OF CYCLES AT 60Hz
10
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
700
JUNCTION CAPACITANCE,(pF)
.5
600
500
400
300
200
TJ=100°C
1.0
0.1
TJ=25°C
0.01
100
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Page 3
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Chip Schottky Barrier Rectifier
Formosa MS
FM220 THRU FM2200
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Marking
Type number
Marking code
FM220
FM230
FM240
FM250
FM260
FM280
FM2100
FM2150
FM2200
SK22
SK23
SK24
SK25
SK26
SK28
S210
S215
S220
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SMA
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
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FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Chip Schottky Barrier Rectifier
Formosa MS
FM220 THRU FM2200
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SMA
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.80
5.00
1.90
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
4.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Chip Schottky Barrier Rectifier
Formosa MS
FM220 THRU FM2200
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
SMA
7"
2,000
4.0
20,000
183*155*183
178
382*356*392
160,000
16.0
SMA
13"
7,500
4.0
15,000
337*337*37
330
350*330*360
120,000
14.2
Suggested thermal profiles for soldering processes
o
o
1.Storage environment: Temperature=5 C ~40 C Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
o
Average ramp-up rate(T L to T P )
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 C
o
200 C
60~120sec
o
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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FAX:886-2-22696141
<6minutes
Page 6
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7
Chip Schottky Barrier Rectifier
Formosa MS
FM220 THRU FM2200
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=125 C for 168 hrs.
4. Forward Operation Life
Rated average rectifier current at T A=25 C for 500hrs.
MIL-STD-750D
METHOD-1038
O
MIL-STD-750D
METHOD-1027
O
O
5. Intermittent Operation Life
6. Pressure Cooker
T A = 25 C, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
JESD22-A102
O
15P SIG at T A=121 C for 4 hrs.
O
MIL-STD-750D
METHOD-1051
O
7. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Forward Surge
8.3ms single half sine-wave , one surge.
9. Humidity
at T A=85 C , RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 C for 1000 hrs.
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1021
O
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MIL-STD-750D
METHOD-1031
O
Page 7
Document ID
Issued Date
DS-121622
2008/02/10
Revised Date
2010/03/10
Revision
D
Page.
7