Formosa MS Silicon Rectifier HER101G THRU HER108G List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings .............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Taping & bulk specifications for AXIAL devices.................................... 4 Suggested thermal profiles for soldering processes............................. 5 High reliability test capabilities...........................................................6 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-222315 2009/02/10 Revised Date - Revision Page. A 6 Formosa MS Silicon Rectifier HER101G THRU HER108G 1.0A Leaded Type High Effciency Rectifiers-50-1000V Package outline DO-41 Features • Axial lead type devices for through hole design. • High current capability. • Ultrafast recovery time for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. 1.0(25.4) MIN. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, DO-41 • Lead : Axial leads, solderable per MIL-STD-202, 1.0(25.4) MIN. .034(.9) .028(.7) DIA. Method 208 guranteed • Polarity: Color band denotes cathode end • Mounting Position : Any • Weight : Approximated 0.33 gram Maximum ratings (AT Dimensions in inches and (millimeters) T A=25 oC unless otherwise noted) PARAMETER CONDITIONS O Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) V R = V RRM T A = 25 OC Reverse current f=1MHz and applied 4V DC reverse voltage Storage temperature IO 1.0 A I FSM 30 A V RMS*2 (V) *3 VR (V) HER101G 50 35 50 HER102G 100 70 100 HER103G 200 140 200 HER104G 300 210 300 HER105G 400 280 400 HER106G 600 420 600 HER107G 800 560 800 HER108G 1000 700 1000 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 *4 VF (V) *5 T RR (nS) TYP. 5.0 Operating temperature T J, ( OC) uA 150 CJ T STG *1 V RRM (V) SYMBOLS UNIT MIN. IR V R = V RRM T A = 100 OC Diode junction capacitance MAX. Symbol pF 20 O +175 -65 C *1 Repetitive peak reverse voltage *2 RMS voltage 1.00 50 *3 Continuous reverse voltage -55 to +150 1.30 *4 Maximum forward voltage *5 Reverse recovery time 1.85 75 Page 2 Document ID Issued Date DS-222315 2009/02/10 Revised Date - Revision Page. A 6 Rating and characteristic curves (HER101G THRU HER108G) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS 6G ~H ER 10 8G R1 G~ HE G~ HE ER 10 04 01 H 1.0 HE R1 HE R1 .1 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.375"(9.5mm) Lead Length 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 30 24 18 Sine Wave 12 JEDEC method 6 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half TJ=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) R1 05 G 03 G AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 120 100 80 60 40 20 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 Revision Page. A 6 REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date DS-222315 2009/02/10 Revised Date - Formosa MS Silicon Rectifier HER101G THRU HER108G Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Marking Type number HER101G HER102G HER103G HER104G HER105G HER106G HER107G HER108G Marking code HER101G HER102G HER103G HER104G HER105G HER106G HER107G HER108G Taping & bulk specifications for AXIAL devices 52.4mm 17mm DIA. 55mm Max. A 17mm DIA. 72mm DIA. 71mm Max. 355mm OFF Center both sids 1.0mm Max OFF Alignment 1.2mm 6.3mm REEL PACKING DEVICE Q'TY 1 COMPONENT CARTON Q'TY 2 APPROX. CASE (PCS / REEL) SPACING SIZE (PCS / CARTON) CROSS "A" in FIG. A (m/m) TYPE DO-41 5,000 5 mm 360 * 340 * 370 WEIGHT(kg) 20,000 10.8 AMMO PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS (m/m) (m/m) TYPE DO-41 5,000 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 260 * 83 * 160 440 * 270 * 340 Page 4 WEIGHT(kg) 50,000 Document ID Issued Date DS-222315 2009/02/10 20.0 Revised Date - Revision Page. A 6 Formosa MS Silicon Rectifier HER101G THRU HER108G BULK PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS TYPE (m/m) DO-41 194 * 8 4 * 20 1,000 WEIGHT(kg) (m/m) 50,000 465 * 220 * 260 20.6 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-222315 2009/02/10 Revised Date - Revision Page. A 6 Formosa MS Silicon Rectifier HER101G THRU HER108G High reliability test capabilities Item Test Conditions Reference o 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 oC for 5 sec. MIL-STD-202F METHOD-208 3. Pull Test 1.0kg in axial lead direction for 10 sec. I F=I O MIL-STD-202F METHOD-211A 4. Bend Lead 1.0kg weight applied to each lead bending arc 90o±5 o for 3 times, I F=I O MIL-STD-202F METHOD-211A V R=80% rate at T J=125 oC for 168 hrs. MIL-STD-750D METHOD-1026 5. High Temperature Reverse Bias Rated average rectifier current at T=25 oC for 500hrs. MIL-STD-750D METHOD-1027 6. Forward Operation Life 7. Intermittent Operation Life T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min, on and off for 500 cycles. MIL-STD-750D METHOD-1036 15P SIG at TA=121 oC for 4 hrs. 8. Pressure Cooker 9. Temperature Cycling -55 oC to +125oC dwelled for 30 min. and transferred for 5min. total 10 cycles. MIL-STD-750D METHOD-1051 0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 10. Thermal Shock 11. Forward Surge 8.3ms single half sine-wave superimposed on rated load, one surge. MIL-STD-750D METHOD-4066-2 at TA=65 oC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 12. Humidity at 175oC for 1000 hrs. MIL-STD-750D METHOD-1031 13. High Temperature Storage Life Dip into Freon at 25oC for 1 min. MIL-STD-202F METHOD-215 14. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-222315 2009/02/10 Revised Date - Revision Page. A 6