BAS40 / 04 / 05 / 06

Formosa MS
SMD Small Signal Schottky Barrier Diode
BAS40 / 04 / 05 / 06
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities...........................................................7
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Small Signal Schottky Barrier Diode
BAS40 / 04 / 05 / 06
200mA Surface Mount Small Signal
Schottky Diodes-40V
Package outline
SOT-23
0.014 (0.35)
0.034 (0.85)
(B)
0.020 (0.51)
.084(2.10)
.068(1.70)
0.108 (2.70)
0.124 (3.10)
• Low current rectification and high speed switching.
• S mall surface mount type.
• Up to 200mA current capability.
• Low forward voltage drop (VF = 1.00V typ. @40mA)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts for green partner, exceeds environmental
0.042 (1.05)
Features
(C)
(A)
standards of MIL-STD-19500 /228
• High speed ( trr < 5 ns )
0.072 (1.80)
0.024 (0.61)
0.012 (0.30)
0.047 (1.19)
0.120 (3.00)
R 0.05
(0.002)
0.059 (1.47)
0.002 (0.05)
Mechanical data
0.01 (0.25)
0.084 (2.10)
0.035 (0.88)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Maximum ratings (AT T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Repetitive peak reverse voltage
V RRM
40
V
Reverse voltage
Peak forward surge current
40
V
tp<10ms
VR
I FSM
600
mA
Repetitive peak forward current
tp<1s
I FRM
200
mA
Forward current
IF
200
mA
Junction temperature
TJ
-55
+125
o
C
Storage temperature
T STG
-65
+175
o
C
Forward voltage
I F = 1 mA
VF
0.38
V
I F = 40 mA
VF
1.0
V
uA
Reverse current
V R = 30 V
IR
1.0
Diode capacitance
V R = 0 V, f = 1MH z
CT
5.0
pF
t rr
5
ns
Reverse recovery time
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I F = 10 mA, V R = 10mA, IRR = 0.1 X I R, RL=100 OHM
Page 2
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7
Rating and characteristic curves for each diode (BAS40 / 04 / 05 / 06)
FIG.1-TYPICAL FORWARD
FIG.2 - TYPICAL REVERSE
CHARACTERISTICS
CHARACTERISTICS
100
REVERSE LEAKAGE CURRENT, (uA)
FORWARD CURRENT,(mA)
100
O
T A = 25 C
10
1
0.1
0
0.4
0.8
FORWARD VOLTAGE,(V)
10
(1)
1
(2)
0.1
0.01
(3)
0
1.2
0
10
20
30
REVERSE VOLTAGE, (V)
(1) TA = 125 OC
FIG.3-TYPICAL JUNCTION CAPACITANCE
(2) TA = 85 OC
(3) TA = 25 OC
Fig. 4 FORWARD CURRENT DERTING
h
AVERAGE FORWARD CURRENT, mA
JUNCTION CAPACITANCE,(pF)
500
4.0
3.0
2.0
1.0
0
0
10
20
400
300
200
100
30
0
0
REVERSE VOLTAGE,(V)
25
50
75
100
125
150
O
AMBIENT TEMPERATURE( C)
820 OHM
+10V
2K
100uH
0.1 uF
IF
tr
tp
t
0.1 uF
t
tr
10%
DUT
50 OHM OUTPUT
PULSE
GENERATOR
50 OHM INPUT
SAMPLING
OSCILLOSCOPE
90%
IR(REC)=1 mA
VR
OUTPUT PULSE
(IF=IR=10mA;measured
at iR(REC)=1mA)
Notes : 1. A2.0 Kohm variable resistor adjusted for a forward Current (IF) of 10mA.
Notes:
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp >> trr.
» t
Recovery Time Equivalent Test Circuit
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Page 3
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Small Signal Schottky Barrier Diode
BAS40 / 04 / 05 / 06
Pinning information
Type number
Symbol
Marking code
A
BAS40
B
40, B1
C
A
BAS40-06
B
46, L2
C
A
BAS40-05
B
45
C
A
BAS40-04
B
44, CB
C
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Small Signal Schottky Barrier Diode
BAS40 / 04 / 05 / 06
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Small Signal Schottky Barrier Diode
BAS40 / 04 / 05 / 06
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
15,000
185*180*65
178
CARTON
SIZE
(m/m)
APPROX.
GROSS WEIGHT
(kg)
CARTON
(pcs)
405*375*405
12.4
300,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15%
2.Reflow soldering of surface-mount devices
Critical Zone
T L to T P
tP
TP
Ramp-up
TL
tL
Temperature
T smax
T smin
TS
ts
Preheat
25
Ramp-down
t25 oC to Peak
Wave Soldering
IR Reflow
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature
Soldering Condition
Average ramp-up rate(T L to TP )
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
100oC
150oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL )
-Time(tL )
183oC
60~150sec
255oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(tP )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25oC to Peak Temperature
<6minutes
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Page 6
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7
Formosa MS
SMD Small Signal Schottky Barrier Diode
BAS40 / 04 / 05 / 06
High reliability test capabilities
Item Test
Conditions
Reference
O
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 OC for 5 sec.
MIL-STD-202F
METHOD-208
3. High Temperature Reverse Bias
V R=80% rate at T A=125 OC for 168 hrs.
MIL-STD-750D
METHOD-1026
4. Forward Operation Life
Rated average rectifier current at T=25 OC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25 OC, I F = I O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
5. Intermittent Operation Life
6. Pressure Cooker
15P SIG at TA=121 OC for 4 hrs.
7. Temperature Cycling
-55 OC to +125OC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
9. Forward Surge
10. Humidity
11. High Temperature Storage Life
12. Solvent Resistance
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MIL-STD-750D
METHOD-1051
MIL-STD-750D
METHOD-1056
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave superimposed
on rated load, one surge.
at TA=65 OC, RH=98% for 1000hrs.
MIL-STD-750D
METHOD-1038
at 175OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
Dip into Freon at 25OC for 1 min.
MIL-STD-202F
METHOD-215
Page 7
Document ID
Issued Date
DS-221666
2008/02/10
Revised Date
-
Revision
Page.
A
7