C1815LT1 - Weitron

C1815LT1
TRANSISTOR(NPN)
COLLECTOR
3
P b Lead(Pb)-Free
3
1
1
BASE
FEATURES
2
2
EMITTER
Power dissipation
SOT-23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
VEBO
5
V
mitter-Base Voltage
Collector Current -Continuous
IC
150
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
℃
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100uA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
50
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
uA
Collector cut-off current
ICEO
VCE=50V, IB=0
0.1
uA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
uA
DC current gain
hFE
VCE= 6V, IC= 2mA
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 10mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 10mA
1
V
fT
Transition frequency
VCE=10V, IC= 1mA,
f=30MHz
80
MHz
CLASSIFICATION OF h FE
Rank
Range
L
H
130-200
200-400
Device Marking
C1815LT1 = HF
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23-Oct-2013
C1815LT1
IC
5
——
VCE
Ta=100℃
hFE
4
12uA
DC CURRENT GAIN
IC
(mA)
—— IC
COMMON EMITTER
Ta=25℃
14uA
COLLECTOR CURRENT
hFE
1000
16uA
10uA
3
8uA
2
6uA
Ta=25℃
100
4uA
1
IB=2uA
COMMON EMITTER
VCE= 6V
10
0.1
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
10
VBEsat ——
—— IC
100 150
10
COLLECTOR CURRENT
IC
(mA)
IC
2000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
500
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
1
VCE (V)
100
Ta=100 ℃
Ta=25℃
1000
Ta=25℃
Ta=100 ℃
β=10
β=10
10
1
10
100
COLLECTOR CURREMT
IC
150
100
——
IC
1
(mA)
VBE
fT
1000
IC
(mA)
IC
——
fT
(mA)
(MHz)
COMMON EMITTER
VCE= 6V
100 150
10
COLLECTOR CURREMT
TRANSITION FREQUENCY
IC
10
T=
a 25
℃
T=
a 10
0℃
COLLECTOR CURRENT
100
0.1
150
1
100
COMMON EMITTER
VCE=10V
Ta=25℃
0.1
0
300
600
900
10
0.1
1200
1
BASE-EMMITER VOLTAGE VBE (mV)
50
Cob/Cib
——
COLLECTOR CURRENT
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
C
(pF)
Ta=25 ℃
CAPACITANCE
PC
250
f=1MHz
IE=0/IC=0
10
10
Cob
——
IC
100
(mA)
Ta
200
150
100
50
0.1
0.1
0
1
REVERSE VOLTAGE
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10
V
20
0
(V)
25
50
75
AMBIENT TEMPERATURE
2/2
100
Ta
125
150
(℃ )
23-Oct-2013