isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s .i ww w n c . i m e UNIT 80 V 60 V 12 V 5 A IC Collector Current-Continuous ICM Collector Current-Peak 10 A IB Base Current-Continuous 2.5 A Collector Power Dissipation @ Ta=25℃ 1.5 B PC TJ Tstg W Total Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3566 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3.0A ; IB= 0.3A, L=1mH 60 V VCEX(SUS)-1 Collector-Emitter Sustaining Voltage IC= 3.0A ; IB1=-IB2= 0.3A, VBE(OFF)=5.0V, L=180μH,clamped 80 V VCEX(SUS)-2 Collector-Emitter Sustaining Voltage IC= 6.0A ; IB1= 0.6A; IB2= -0.3A, VBE(OFF)= -5.0V, L= 180μH,clamped 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA ICER Collector Cutoff Current VCE= 60V; RBE= 51Ω, Ta=125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 60V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V, Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current 10 μA hFE-1 DC Current Gain hFE-2 DC Current Gain ton Turn-on Time tstg Storage Time VEB= 5V; IC=0 IC= 0.3A; VCE= 5V 40 IC= 3.0A; VCE= 5V 40 IC= 3.0A ,RL= 17Ω, IB1= -IB2= 0.3A,VCC≈ 50V Fall Time hFE-2 Classifications M L K 40-80 60-120 100-200 isc Website：www.iscsemi.cn MIN n c . i m e s c is w. w w Switching times tf CONDITIONS 2 MAX UNIT 200 0.5 μs 3.0 μs 0.5 μs