isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2750 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 1A; L= 100μH 100 V VCEX(SUS)1 Collector-Emitter Sustaining Voltage IC= 10A; IB1= -IB= 1A; Ta= 125℃ L= 180μH; Clamped 150 V VCEX(SUS)2 Collector-Emitter Sustaining Voltage IC= 20A; IB1= 2A; IB2= 1A; Ta= 125℃; L= 180μH; Clamped 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICER Collector Cutoff Current VCE= 100V; RBE= 50Ω; Ta= 125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125℃ 10 500 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 5A; VCE= 5V 30 hFE-2 DC Current Gain IC= 10A; VCE= 5V 20 120 Switching Times ton Turn-on Time tstg Storage Time tf IC= 10A, IB1= -IB2= 1A, VCC≈ 50V; RL= 5Ω Fall Time hFE-1 Classifications M L K 30-60 40-80 60-120 isc Website：www.iscsemi.cn 2 1.0 μs 1.5 μs 0.3 μs