isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2.5 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2518 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2A; IB= 0.4A, L=1mH 400 V VCEX(SUS)-1 Collector-Emitter Sustaining Voltage IC= 2A ; IB1=-IB2= 0.4A, L=180μH,clamped 450 V VCEX(SUS)-2 Collector-Emitter Sustaining Voltage IC= 4A; IB1= 0.8A; IB2= -0.4A, L= 180μH,clamped 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA ICER Collector Cutoff Current VCE= 400V; RBE= 51Ω, Ta=125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 400V; VBE(off)= -1.5V VCE= 400V; VBE(off)= -1.5V, Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 20 hFE-2 DC Current Gain IC= 2A; VCE= 5V 10 B MIN B B MAX UNIT 80 Switching times ton Turn-on Time tstg Storage Time tf IC= 2A ,RL= 75Ω, IB1= -IB2= 0.4A,VCC≈ 150V Fall Time hFE-2 Classifications M L K 20-40 30-60 40-80 isc Website：www.iscsemi.cn 2 1.0 μs 2.5 μs 0.7 μs