isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Peak -15 A IB Base Current-Continuous -3.5 A Collector Power Dissipation @ Ta=25℃ 1.5 B PC TJ Tstg W Total Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1010 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A ; IB= -0.5A, L=1mH -100 V VCEX(SUS)-1 Collector-Emitter Sustaining Voltage IC= -5.0A ; IB1=-IB2= -0.5A, VBE(OFF)=5.0V, L=180μH,clamped -100 V VCEX(SUS)-2 Collector-Emitter Sustaining Voltage IC= -10A ; IB1= -1.0A; IB2= -0.5A, VBE(OFF)= 5.0V, L= 180μH,clamped -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE=0 -10 μA ICER Collector Cutoff Current VCE= -100V ; RBE= 51Ω,Ta=125℃ -1.0 mA ICEX Collector Cutoff Current VCE= -100V; VBE(off)= -1.5V VCE= -100V; VBE(off)= -1.5V,Ta=125℃ -10 -1.0 μA mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V 40 200 hFE-2 DC Current Gain IC= -3.0A ; VCE= -5V 40 200 hFE-3 DC Current Gain IC= -5.0A ; VCE= -5V 20 B B MAX UNIT Switching times ton Turn-on Time tstg Storage Time tf IC= -5.0A ,RL= 10Ω, IB1= -IB2= -0.5A,VCC≈-50V Fall Time hFE-2 Classifications M L K 40-80 60-120 100-200 isc Website：www.iscsemi.cn 2 0.5 μs 1.5 μs 0.5 μs INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Website：www.iscsemi.cn 3 isc Product Specification 2SA1010