MB22S thru MB210S ® Pb MB22S thru MB210S Pb Free Plating Product 2.0 Ampere Surface Mount MDS/MD-S Schottky Bridge Rectifiers MDS/MD-S Features Schottky barrier rectifier diode chip package device .275(7.0)MAX Plastic package has Underwriters Laboratory Flammability .067(1.7) .057(1.3) Classification 94V-0 .165(4.2) .150(3.8) .051(1.3) .035(0.9) High surge overload rating:30A peak Saves space on printed circuit boards High temperature soldering guaranteed:260 .014(.35) .031(0.8) .019(0.5) .106(2.7) .09(2.3) /10 seconds Mechanical Data .043(1.1) .027(0.7) .006(.15) .067(1.7) .057(1.3) .193(4.9) .177(4.5) Case:Molded plastic body MDS/MD-S Package .106(2.7) .09(2.3) Terminals: plated leads solderable per MIL-STD-750, 1 2 3 4 .008(0.2) Method 2026 Mounting Position:Any Dimensions in inches and (millimeters) Weight:0.078 oz.,0.22g Maximum Ratings & Electrical Characteristics (TA=25 Parameter unless otherwise noted) Symbol MB22S MB24S MB26S MB28S MB210S Unit Maximum repeti ive peak reverse voltage VRRM 20 40 60 80 100 V Maximum RMS voltage VRMS 14 28 42 56 70 V Maximum DC blocking voltage VDC 20 40 60 80 100 V Maximum Average forward output current IF(AV) 2.0 A IFSM 50 A Peak forward surge current 8.3 MS single HALF sine-wav superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2 0A Maximum DC reverse current at Ta=25 rated DC blocking voltage per leg Ta=100 Typical thermal resistance per leg(Note1) Operation junct on temperzture range Storage temperature range VF IR 0.55 0.70 0.85 V 0.5 mA 20 RθJA 80 RθJL 20 Tj -55 to +125 TSTG -55 to +150 /W Notes: 1. Thermal resistance form junction to ambient and from junction to lead P.C B. mounted on 0 2×0 2"(5.0×5.0mm) copper pad areas. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MB22S thru MB210S ® RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/